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Kian-Giap Gan, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Fang AW, Koch BR, Gan KG, Park H, Jones R, Cohen O, Paniccia MJ, Blumenthal DJ, Bowers JE. A racetrack mode-locked silicon evanescent laser. Optics Express. 16: 1393-8. PMID 18542212 DOI: 10.1364/Oe.16.001393  0.692
2005 Okuno YL, Gan KG, Chou HF, Chiu YJ, Wang CS, Wu S, Geske J, Bjorlin ES, Bowers JE. Stable polarization operation of 1.3-/spl mu/m wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding Ieee Journal On Selected Topics in Quantum Electronics. 11: 1006-1014. DOI: 10.1109/JSTQE.2005.857270  0.55
2004 Gan KG, Bowers JE. Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode Ieee Photonics Technology Letters. 16: 1256-1258. DOI: 10.1109/Lpt.2004.826003  0.452
2004 Lasaosa D, Shi JW, Pasquariello D, Gan KG, Tien MC, Chang HH, Chu SW, Sun CK, Chiu YJ, Bowers JE. Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance Ieee Journal On Selected Topics in Quantum Electronics. 10: 728-741. DOI: 10.1109/Jstqe.2004.833963  0.665
2004 Geske J, Gan KG, Okuno YL, Piprek J, Bowers JE. Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping Ieee Journal of Quantum Electronics. 40: 1155-1162. DOI: 10.1109/JQE.2004.833234  0.611
2004 Gan KG, Sun CK, DenBaars SP, Bowers JE. Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes Applied Physics Letters. 84: 4675-4677. DOI: 10.1063/1.1760211  0.567
2004 Gan KG, Bowers JE, Sun CK. Femtosecond Carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 669-670.  0.347
2004 Okuno YL, Gan KG, Chou HF, Chiu YJ, Wang C, Wu S, Geske J, Björlin ES, Bowers JE. Stable polarization operation of 1.3 μm-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding Conference Digest - Ieee International Semiconductor Laser Conference. 117-118.  0.657
2003 Shi JW, Gan KG, Bowers JE, Liu TM, Sun CK, Chiu YJ. Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm) Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 2: 406. DOI: 10.1109/CLEOPR.2003.1276962  0.441
2003 Sun CK, Chen YH, Shi JW, Chiu YJ, Gan KG, Bowers JE. Electron relaxation and transport dynamics in low-temperature-grown gaas under 1 eV optical excitation Applied Physics Letters. 83: 911-913. DOI: 10.1063/1.1595131  0.425
2003 Okuno YL, Geske J, Gan KG, Chiu YJ, DenBaars SP, Bowers JE. 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control Applied Physics Letters. 82: 2377-2379. DOI: 10.1063/1.1568162  0.72
2002 Shi JW, Gan KG, Chen YH, Sun CK, Chiu YJ, Bowers JE. Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors Ieee Photonics Technology Letters. 14: 1587-1589. DOI: 10.1109/Lpt.2002.803374  0.453
2002 Shi JW, Chen YH, Gan KG, Chiu YJ, Sun CK, Bowers JE. High-speed and high-power performances of LTG-GaAs based metal-semiconductor-metal traveling-wave-photodetectors in 1.3-μm wavelength regime Ieee Photonics Technology Letters. 14: 363-365. DOI: 10.1109/68.986814  0.496
2002 Gan KG, Shi JW, Chen YH, Sun CK, Chiu YJ, Bowers JE. Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors Applied Physics Letters. 80: 4054-4056. DOI: 10.1063/1.1482139  0.551
2002 Shi JW, Gan KG, Chen YH, Chiu YJ, Bowers JE, Sun CK. Nonlinear behaviors of LTG-GaAs based MSM TWPDs under telecommunication wavelength excitation Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 350-351.  0.369
2002 Shi JW, Chen YH, Gan KG, Chiu YJ, Bowers JE, Sun CK. High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (∼1.3 μm) Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 10-11.  0.417
2001 Gan KG, Shi JW, Chiu YJ, Sun CK, Bowers JE. Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm 2001 International Topical Meeting On Microwave Photonics, Mwp 2001. 1: 153-155. DOI: 10.1109/MWP.2002.981819  0.358
2001 Shi JW, Gan KG, Chiu YJ, Chen YH, Sun CK, Yang YJ, Bowers JE. Metal-semiconductor-metal traveling-wave photodetectors Ieee Photonics Technology Letters. 13: 623-625. DOI: 10.1109/68.924045  0.575
2001 Shi JW, Gan KG, Chiu YJ, Bowers JE, Sun CK. High power performance of ultrahigh bandwidth MSM TWPDs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 887-888.  0.303
2000 Sun C, Huang Y, Liang J, Wang J, Gan K, Kao F, Keller S, Mack MP, Mishra U, Denbaars SP. Large near resonance third order nonlinearity in GaN Optical and Quantum Electronics. 32: 619-640. DOI: 10.1023/A:1007076506723  0.358
1999 Sun CK, Gan KG, Kao FJ, Huang MK, Wang YS, Mack MP, DenBaars SP. Two-photon photoluminescence and current images of bulk GaN and InGaN green LEDs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 39-40.  0.305
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