Year |
Citation |
Score |
2018 |
Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Balandin AA. Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials. Nano Letters. PMID 29767986 DOI: 10.1021/Acs.Nanolett.8B00729 |
0.561 |
|
2018 |
Geremew A, Bloodgood MA, Aytan E, Woo BWK, Corber SR, Liu G, Bozhilov K, Salguero TT, Rumyantsev S, Rao MP, Balandin AA. Current Carrying Capacity of Quasi-1D ZrTe3Van Der Waals Nanoribbons Ieee Electron Device Letters. 39: 735-738. DOI: 10.1109/Led.2018.2820140 |
0.58 |
|
2017 |
Liu G, Rumyantsev S, Bloodgood MA, Salguero TT, Shur M, Balandin AA. Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383. PMID 28073263 DOI: 10.1021/Acs.Nanolett.6B04334 |
0.604 |
|
2017 |
Khitun A, Liu G, Balandin AA. Two-Dimensional Oscillatory Neural Network Based on Room-Temperature Charge-Density-Wave Devices Ieee Transactions On Nanotechnology. 16: 860-867. DOI: 10.1109/Tnano.2017.2716845 |
0.586 |
|
2017 |
Liu G, Zhang EX, Liang CD, Bloodgood MA, Salguero TT, Fleetwood DM, Balandin AA. Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices Ieee Electron Device Letters. 38: 1724-1727. DOI: 10.1109/Led.2017.2763597 |
0.529 |
|
2017 |
Balynsky M, Kozhevnikov A, Khivintsev Y, Bhowmick T, Gutierrez D, Chiang H, Dudko G, Filimonov Y, Liu G, Jiang C, Balandin AA, Lake R, Khitun A. Magnonic interferometric switch for multi-valued logic circuits Journal of Applied Physics. 121: 024504. DOI: 10.1063/1.4973115 |
0.48 |
|
2017 |
Gutierrez D, Chiang H, Bhowmick T, Volodchenkov AD, Ranjbar M, Liu G, Jiang C, Warren C, Khivintsev Y, Filimonov Y, Garay J, Lake R, Balandin AA, Khitun A. Magnonic holographic imaging of magnetic microstructures Journal of Magnetism and Magnetic Materials. 428: 348-356. DOI: 10.1016/J.Jmmm.2016.12.022 |
0.455 |
|
2016 |
Stolyarov MA, Liu G, Bloodgood MA, Aytan E, Jiang C, Samnakay R, Salguero TT, Nika DL, Rumyantsev SL, Shur MS, Bozhilov KN, Balandin AA. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale. PMID 27531559 DOI: 10.1039/C6Nr03469A |
0.547 |
|
2016 |
Liu G, Debnath B, Pope TR, Salguero TT, Lake RK, Balandin AA. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature. Nature Nanotechnology. PMID 27376243 DOI: 10.1038/Nnano.2016.108 |
0.615 |
|
2016 |
Politano A, Chiarello G, Samnakay R, Liu G, Gürbulak B, Duman S, Balandin AA, Boukhvalov DW. The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. Nanoscale. PMID 27049751 DOI: 10.1039/C6Nr01262K |
0.539 |
|
2015 |
Liu G, Rumyantsev SL, Jiang C, Shur MS, Balandin AA. Selective Gas Sensing with h-BN Capped MoS2 Heterostructure Thin-Film Transistors Ieee Electron Device Letters. 36: 1202-1204. DOI: 10.1109/Led.2015.2481388 |
0.533 |
|
2015 |
Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Reduced 1/f noise in high-mobility BN-graphene-BN heterostructure transistors Device Research Conference - Conference Digest, Drc. 2015: 153-154. DOI: 10.1109/DRC.2015.7175601 |
0.68 |
|
2015 |
Stolyarov MA, Liu G, Rumyantsev SL, Shur M, Balandin AA. Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4926872 |
0.724 |
|
2013 |
Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective sensing of individual gases using graphene devices Ieee Sensors Journal. 13: 2818-2822. DOI: 10.1109/Jsen.2013.2251627 |
0.565 |
|
2013 |
Shur M, Muraviev AV, Rumyantsev SL, Knap W, Liu G, Balandin AA. Plasmonic and bolometric terahertz graphene sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688554 |
0.631 |
|
2013 |
Liu G, Rumyantsev SL, Balandin AA, Shur MS. Surface and volume 1/f noise in multi-layer graphene 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6578991 |
0.649 |
|
2013 |
Muraviev AV, Rumyantsev SL, Liu G, Balandin AA, Knap W, Shur MS. Plasmonic and bolometric terahertz detection by graphene field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826139 |
0.742 |
|
2013 |
Liu G, Ahsan S, Khitun AG, Lake RK, Balandin AA. Graphene-based non-Boolean logic circuits Journal of Applied Physics. 114: 154310. DOI: 10.1063/1.4824828 |
0.487 |
|
2013 |
Liu G, Rumyantsev S, Shur MS, Balandin AA. Origin of 1/f noise in graphene multilayers: Surface vs. volume Applied Physics Letters. 102. DOI: 10.1063/1.4794843 |
0.671 |
|
2012 |
Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A |
0.722 |
|
2012 |
Yan Z, Liu G, Khan JM, Balandin AA. Graphene quilts for thermal management of high-power GaN transistors. Nature Communications. 3: 827. PMID 22569371 DOI: 10.1038/Ncomms1828 |
0.795 |
|
2012 |
Rumyantsev S, Liu G, Shur MS, Potyrailo RA, Balandin AA. Selective gas sensing with a single pristine graphene transistor. Nano Letters. 12: 2294-8. PMID 22506589 DOI: 10.1021/Nl3001293 |
0.738 |
|
2012 |
Yu J, Liu G, Sumant AV, Goyal V, Balandin AA. Graphene-on-diamond devices with increased current-carrying capacity: carbon sp2-on-sp3 technology. Nano Letters. 12: 1603-8. PMID 22329428 DOI: 10.1021/Nl204545Q |
0.808 |
|
2012 |
Liu G. Graphene device fabrication and applications in communication systems Journal of Nanoelectronics and Optoelectronics. 7: 329-360. DOI: 10.1166/jno.2012.1363 |
0.613 |
|
2012 |
Balandin AA, Rumyantsev S, Liu G, Shur MS, Potyrailo RA. Selective gas sensing with a single graphene-on-silicon transistor 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243283 |
0.653 |
|
2012 |
Rumyantsev S, Liu G, Potyrailo RA, Balandin AA, Shur MS. Selective gas sensing by graphene Proceedings of Ieee Sensors. DOI: 10.1109/ICSENS.2012.6411434 |
0.642 |
|
2012 |
Liu G, Rumyantsev S, Shur M, Balandin AA. Graphene thickness-graded transistors with reduced electronic noise Applied Physics Letters. 100: 033103. DOI: 10.1063/1.3676277 |
0.758 |
|
2011 |
Liu G, Rumyantsev S, Stillman W, Shur M, Balandin AA. 1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1357 |
0.736 |
|
2011 |
Teweldebrhan D, Liu G, Balandin AA. Reversible Tuning of the Electronic Properties of Graphene via Controlled Exposure to Electron Beam Irradiation and Annealing Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1354 |
0.842 |
|
2011 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Ozkan M, Lake RK, Balandin AA, Ozkan CS. DNA Gating effect from single layer graphene Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1353 |
0.835 |
|
2011 |
Yu J, Liu G, Sumant AV, Balandin AA. Top-Gate Graphene-on-UNCD Transistors with Enhanced Performance Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1350 |
0.738 |
|
2011 |
Yan Z, Liu G, Khan J, Yu J, Subrina S, Balandin A. Experimental Demonstration of Thermal Management of High-Power GaN Transistors with Graphene Lateral Heat Spreaders Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1348 |
0.82 |
|
2011 |
LIU G, STILLMAN W, RUMYANTSEV S, SHUR M, BALANDIN AA. LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES International Journal of High Speed Electronics and Systems. 20: 161-170. DOI: 10.1142/S0129156411006490 |
0.708 |
|
2011 |
Liu G, Teweldebrhan D, Balandin AA. Tuning of Graphene Properties via Controlled Exposure to Electron Beams Ieee Transactions On Nanotechnology. 10: 865-870. DOI: 10.1109/Tnano.2010.2087391 |
0.835 |
|
2011 |
Yang X, Liu G, Rostami M, Balandin AA, Mohanram K. Graphene ambipolar multiplier phase detector Ieee Electron Device Letters. 32: 1328-1330. DOI: 10.1109/Led.2011.2162576 |
0.687 |
|
2011 |
Rumyantsev SL, Liu G, Shur MS, Balandin AA. Observation of the memory steps in graphene at elevated temperatures Applied Physics Letters. 98: 222107. DOI: 10.1063/1.3596441 |
0.684 |
|
2010 |
Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395302. PMID 21403224 DOI: 10.1088/0953-8984/22/39/395302 |
0.734 |
|
2010 |
Yang X, Liu G, Balandin AA, Mohanram K. Triple-mode single-transistor graphene amplifier and its applications. Acs Nano. 4: 5532-8. PMID 20939515 DOI: 10.1021/Nn1021583 |
0.759 |
|
2010 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Ozkan M, Lake RK, Balandin AA, Ozkan CS. Gating of single-layer graphene with single-stranded deoxyribonucleic acids. Small (Weinheim An Der Bergstrasse, Germany). 6: 1150-5. PMID 20473987 DOI: 10.1002/Smll.200902379 |
0.837 |
|
2010 |
Shao Q, Subrina S, Nika DL, Liu G, Kotchetkov D. Electric Current and Heat Propagation in Graphene Ribbons Journal of Nanoelectronics and Optoelectronics. 4: 291-295. DOI: 10.1166/Jno.2009.1041 |
0.816 |
|
2010 |
Amini S, Garay J, Liu G, Balandin AA, Abbaschian R. Growth of large-area graphene films from metal-carbon melts Journal of Applied Physics. 108. DOI: 10.1063/1.3498815 |
0.721 |
|
2009 |
Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Lake RK, Ozkan M, Balandin AA, Ozkan CS. Gating of single layer graphene using DNA Proceedings of Spie. 7403. DOI: 10.1117/12.826801 |
0.817 |
|
2009 |
Shao Q, Liu G, Teweldebrhan D, Balandin AA, Rumyantsev S, Shur MS, Yan D. Flicker Noise in Bilayer Graphene Transistors Ieee Electron Device Letters. 30: 288-290. DOI: 10.1109/Led.2008.2011929 |
0.812 |
|
2009 |
Calizo I, Bejenari I, Rahman M, Liu G, Balandin AA. Ultraviolet Raman microscopy of single and multilayer graphene Journal of Applied Physics. 106: 043509. DOI: 10.1063/1.3197065 |
0.815 |
|
2009 |
Liu G, Stillman W, Rumyantsev S, Shao Q, Shur M, Balandin AA. Low-frequency electronic noise in the double-gate single-layer graphene transistors Applied Physics Letters. 95: 033103. DOI: 10.1063/1.3180707 |
0.739 |
|
2008 |
Shao Q, Liu G, Teweldebrhan D, Balandin AA. High-temperature quenching of electrical resistance in graphene interconnects Applied Physics Letters. 92: 202108. DOI: 10.1063/1.2927371 |
0.832 |
|
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