| Year |
Citation |
Score |
| 2000 |
Wickland H, Talevi R, Bian Z, Nuesca G, Sankaran S, Kumar K, Geer RE, Kaloyeros AE, Liu J, Hummel J, Shatter EO, Martin SJ. Integration of chemical vapor deposition Al interconnects in a benzocyclobutene low dielectric constant polymer matrix: A feasibility study Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2463-2471. DOI: 10.1116/1.1308599 |
0.509 |
|
| 1999 |
Ivanova AR, Galewski CJ, Sans CA, Seidel TE, Grunow S, Kumar K, Kaloyeros AE. Integration of PECVD tungsten nitride as a barrier layer for copper metallization Materials Research Society Symposium - Proceedings. 564: 321-326. DOI: 10.1557/Proc-564-321 |
0.748 |
|
| 1998 |
Kaloyeros AE, Kelsey J, Goldberg C, Anjum D, Chen X, Mirza J, Kumar K, Arkles B, Han B, Sullivan JJ. Low Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu Metallization Mrs Proceedings. 514: 499. DOI: 10.1557/Proc-514-499 |
0.669 |
|
| 1997 |
Faltermeier J, Knorr A, Talevi R, Gundlach H, Kumar KA, Peterson GG, Kaloyeros AE, Sullivan JJ, Loan J. Integrated plasma-promoted chemical vapor deposition route to aluminum interconnect and plug technologies for emerging computer chip metallization Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1758-1766. DOI: 10.1116/1.589521 |
0.733 |
|
| 1996 |
Knorr A, Faltermeier J, Talevi R, Gundlach H, Kumar KA, Peterson GG, Kaloyeros AE. Metal CVD Technology for ULSI Applications: The Aluminum Route The Japan Society of Applied Physics. 1996: 109-111. DOI: 10.7567/Ssdm.1996.A-3-1 |
0.689 |
|
| Show low-probability matches. |