Year |
Citation |
Score |
2015 |
Visweswaran B, Mandlik P, Mohan SH, Silvernail JA, Ma R, Sturm JC, Wagner S. Diffusion of water into permeation barrier layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4918327 |
0.517 |
|
2014 |
Visweswaran B, Mohan SH, Mandlik P, Silvernail J, Ma R, Sturm J, Wagner S. Predicting the lifetime of flexible permeation barrier layers for OLED displays Digest of Technical Papers - Sid International Symposium. 45: 111-113. DOI: 10.1002/j.2168-0159.2014.tb00031.x |
0.447 |
|
2010 |
Han L, Song K, Wagner S, Mandlik P. A new insulator for thin-film transistor backplanes and for flexible passivation layers Ecs Transactions. 33: 125-134. DOI: 10.1149/1.3481226 |
0.51 |
|
2010 |
Han L, Song K, Mandlik P, Wagner S. Ultraflexible amorphous silicon transistors made with a resilient insulator Applied Physics Letters. 96. DOI: 10.1063/1.3298364 |
0.621 |
|
2010 |
Han L, Song K, Wagner S, Mandlik P. 17.3: a-Si:H thin-film transistors with a new hybrid dielectric highly stable under mechanical and electrical stress 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1: 238-240. |
0.524 |
|
2010 |
Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920. |
0.657 |
|
2010 |
Song KW, Han L, Wagner S, Mandlik P. Effects of mechanical strain on the electrical performance of amorphous silicon thin-film transistors with a new gate dielectric Materials Research Society Symposium Proceedings. 1196: 50-55. |
0.355 |
|
2010 |
Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920. |
0.631 |
|
2009 |
Song KW, Han L, Wagner S, Mandlik P. Effects of Mechanical Strain on the Electrical Performance of Amorphous Silicon Thin-Film Transistors with a New Gate Dielectric Mrs Proceedings. 1196. DOI: 10.1557/Proc-1196-C02-02 |
0.594 |
|
2009 |
Han L, Mandlik P, Gartside J, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. Properties of a permeation barrier material deposited from hexamethyl disiloxane and oxygen Journal of the Electrochemical Society. 156: H106-H114. DOI: 10.1149/1.3028308 |
0.464 |
|
2009 |
Han L, Mandlik P, Wagner S. A new gate dielectric for highly stable amorphous-silicon thin-film transistors with ∼1.5-cm2 V · s electron field-effect mobility Ieee Electron Device Letters. 30: 502-504. DOI: 10.1109/Led.2009.2015779 |
0.63 |
|
2009 |
Han L, Mandlik P, Cherenack KH, Wagner S. Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2 /V s for electrons and 0.1 cm2 /V s for holes Applied Physics Letters. 94. DOI: 10.1063/1.3119636 |
0.666 |
|
2008 |
Mandlik P, Han L, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. Diffusion of atmospheric gases into barrier-layer sealed organic light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.3030982 |
0.471 |
|
2008 |
Mandlik P, Gartside J, Han L, Cheng IC, Wagner S, Silvernail JA, Ma RQ, Hack M, Brown JJ. A single-layer permeation barrier for organic light-emitting displays Applied Physics Letters. 92. DOI: 10.1063/1.2890432 |
0.667 |
|
2007 |
Gartside J, Mandlik P, Wagner S, Zhou T, Silvernail J, Hack M. Material Characterisation of a Novel Permeation Barrier for Flexible Organic Displays Mrs Proceedings. 1007. DOI: 10.1557/Proc-1007-S07-06 |
0.454 |
|
2006 |
Mandlik P, Lacour SP, Li JW, Chou SY, Wagner S. Fully elastic interconnects on nanopatterned elastomeric substrates Ieee Electron Device Letters. 27: 650-652. DOI: 10.1109/Led.2006.879029 |
0.503 |
|
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