| Year |
Citation |
Score |
| 2010 |
Donnelly VM, Belostotskiy SG, Economou DJ, Sadeghi N. Laser Thomson Scattering, Raman Scattering and laser-absorption diagnostics of high pressure microdischarges Journal of Physics: Conference Series. 227. DOI: 10.1088/1742-6596/227/1/012011 |
0.398 |
|
| 2009 |
Belostotskiy SG, Donnelly VM, Economou DJ, Sadeghi N. Spatially resolved measurements of argon metastable(1s5) density in a high pressure microdischarge using diode laser absorption spectroscopy Ieee Transactions On Plasma Science. 37: 852-858. DOI: 10.1109/Tps.2009.2015949 |
0.307 |
|
| 2008 |
Belostotskiy SG, Khandelwal R, Wang Q, Donnelly VM, Economou DJ, Sadeghi N. Measurement of electron temperature and density in an argon microdischarge by laser Thomson scattering Applied Physics Letters. 92. DOI: 10.1063/1.2939437 |
0.308 |
|
| 2003 |
Fuller NCM, Telesca DA, Donnelly VM, Herman IP. Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2-Ar plasmas with changing mixtures Applied Physics Letters. 82: 4663-4665. DOI: 10.1063/1.1585124 |
0.3 |
|
| 2000 |
Choe JY, Fuller NCM, Donnelly VM, Herman IP. Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 2669-2679. DOI: 10.1116/1.1290375 |
0.332 |
|
| 1998 |
Choe JY, Herman IP, Donnelly VM. Laser-induced thermal desorption analysis of the surface during Ge etching in a Cl2 inductively coupled plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 3266-3273. DOI: 10.1116/1.581532 |
0.356 |
|
| 1997 |
Choe JY, Herman IP, Donnelly VM. Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 3024-3031. DOI: 10.1116/1.580899 |
0.304 |
|
| 1996 |
Donnelly VM, Herman IP, Cheng CC, Guinn KV. Surface chemistry during plasma etching of silicon Pure and Applied Chemistry. 68: 1071-1074. DOI: 10.1351/Pac199668051071 |
0.357 |
|
| 1996 |
Herman IP, Donnelly VM, Cheng CC, Guinn KV. Surface analysis during plasma etching by laser-induced thermal desorption Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35: 2410-2415. DOI: 10.1143/Jjap.35.2410 |
0.388 |
|
| 1995 |
Chena CC, Guinn KV, Herman IP, Donnelly VM. Competitive halogenation of silicon surfaces in HBr/CI 2 plasmas studied with x-ray photoelectron spectroscopy and in situ, real-time, pulsed laser-induced thermal desorption Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1970-1976. DOI: 10.1116/1.579638 |
0.33 |
|
| 1994 |
Herman IP, Donnelly VM, Guinn KV, Cheng CC. Laser-induced thermal desorption as an in situ surface probe during plasma processing. Physical Review Letters. 72: 2801-2804. PMID 10055980 DOI: 10.1103/PhysRevLett.72.2801 |
0.4 |
|
| 1993 |
Donnelly VM, Guinn KV, Cheng CC, Herman IP. Chemical Topography of Si Etching in a Cl2 Plasma, Studied by X-RAY Photoelectron Spectroscopy and Laser-Induced Thermal Desorption Mrs Proceedings. 334. DOI: 10.1557/Proc-334-425 |
0.321 |
|
| 1993 |
Donnelly VM. Extension of infrared-laser interferometric thermometry to silicon wafers polished on only one side Applied Physics Letters. 63: 1396-1398. DOI: 10.1063/1.109688 |
0.399 |
|
| 1992 |
McCrary VR, Donnelly VM, Napholtz SG, Hayes TR, Davisson PS, Bruno DC. InP substrate temperature measurements in a horizontal, low-pressure metalorganic chemical vapor deposition reactor by infrared laser interferometric thermometry Journal of Crystal Growth. 125: 320-328. DOI: 10.1016/0022-0248(92)90345-J |
0.731 |
|
| 1991 |
Donnelly VM. Products of pulsed laser induced thermal decomposition of triethylgallium and trimethylgallium adsorbed on GaAs(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 2887-2894. DOI: 10.1116/1.577147 |
0.448 |
|
| 1991 |
McCaulley JA, Shul RJ, Donnelly VM. Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 2872-2886. DOI: 10.1116/1.577146 |
0.324 |
|
| 1990 |
Donnelly VM, Mccaulley JA, Shul RJ. Kinetics of Thermal Decomposition of Group-Hi Metal Alkyls on GaAs(100) Mrs Proceedings. 204. DOI: 10.1557/PROC-204-15 |
0.36 |
|
| 1990 |
Donnelly VM, McCaulley JA. Infrared-laser interferometric thermometry: A nonintrusive technique for measuring semiconductor wafer temperatures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 84-92. DOI: 10.1116/1.576993 |
0.423 |
|
| 1990 |
Donnelly VM, Mucha JA, McCrary VR. Mechanisms of dehydrogenation during ArF excimer laser patterning of plasma-deposited silicon nitride films Journal of Applied Physics. 67: 3337-3342. DOI: 10.1063/1.345370 |
0.745 |
|
| 1990 |
Hayes TR, Heimann PA, Donnelly VM, Strege KE. Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching Applied Physics Letters. 57: 2817-2819. DOI: 10.1063/1.103751 |
0.352 |
|
| 1990 |
Donnelly VM, Hayes TR. Excimer laser induced etching of InP Applied Physics Letters. 57: 701-703. DOI: 10.1063/1.103596 |
0.515 |
|
| 1990 |
Donnelly VM, McCaulley JA. Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100) Surface Science. 238: 34-52. DOI: 10.1016/0039-6028(90)90063-E |
0.313 |
|
| 1989 |
Donnelly VM, Mucha JA. Direct pattern replication in plasma deposited silicon nitride films by 193 nm ArF excimer laser-induced suppression of etching Applied Physics Letters. 54: 1567-1569. DOI: 10.1063/1.101315 |
0.46 |
|
| 1989 |
Donnelly VM, McCaulley JA. Selected area growth of GaAs by laser-induced pyrolysis of adsorbed triethylgallium Applied Physics Letters. 54: 2458-2460. DOI: 10.1063/1.101071 |
0.548 |
|
| 1989 |
McCaulley JA, McCrary VR, Donnelly VM. Laser-induced decomposition of triethylgallium and trimethylgallium adsorbed on gallium arsenide(100) The Journal of Physical Chemistry. 93: 1148-1158. DOI: 10.1021/J100340A026 |
0.715 |
|
| 1989 |
Tu CW, Donnelly VM, Beggy JC, McCrary VR, McCaulley JA. Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiation Journal of Crystal Growth. 95: 140-141. DOI: 10.1016/0022-0248(89)90367-9 |
0.776 |
|
| 1989 |
McCaulley JA, Donnelly VM. Kinetics of the thermal desorption of indium from GaAs (100) The Journal of Chemical Physics. 91: 4330-4337. |
0.312 |
|
| 1988 |
Mccaulley JA, Mccrary VR, Donnelly VM. Laser Induced Decomposition of Triethylgallium and Trimethylgallium Adsorbed on GaAs(100) Mrs Proceedings. 129. DOI: 10.1557/PROC-129-159 |
0.508 |
|
| 1988 |
Donnelly VM, McCaulley JA, McCrary VR, Tu CW. Selected Area Growth of GaAs by Laser Induced Pyrolysis of Adsorbed Ga-Alkyls Mrs Proceedings. 129. DOI: 10.1557/Proc-129-147 |
0.782 |
|
| 1988 |
Tu CW, Donnelly VM, Beggy JC, Baiocchi FA, McCrary VR, Harris TD, Lamont MG. Laser-modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates Applied Physics Letters. 52: 966-968. DOI: 10.1063/1.99243 |
0.761 |
|
| 1988 |
Donnelly VM, Tu CW, Beggy JC, McCrary VR, Lamont MG, Harris TD, Baiocchi FA, Farrow RC. Laser-assisted metalorganic molecular beam epitaxy of GaAs Applied Physics Letters. 52: 1065-1067. DOI: 10.1063/1.99212 |
0.79 |
|
| 1987 |
Donnelly VM, Tu CW, Beggy JC, McCrary VR, Harris TD, Lamont MG, Baiocchi FA, Farrow RC. Effects of Excimer Laser Irradiation on Mbe and Mo-Mbe Growth of (Al)Gaas On Gaas And (Ca,Sr)F2/Gaas Substrates Mrs Proceedings. 101. DOI: 10.1557/Proc-101-291 |
0.786 |
|
| 1987 |
Donnelly VM, McCrary VR, Appelbaum A, Brasen D, Lowe WP. ArF excimer-laser-stimulated growth of polycrystalline GaAs thin films Journal of Applied Physics. 61: 1410-1414. DOI: 10.1063/1.338120 |
0.785 |
|
| 1987 |
McCrary VR, Donnelly VM. The ultraviolet absorpton spectra of selected organometallic compounds used in the chemical vapor deposition of gallium arsenide Journal of Crystal Growth. 84: 253-258. DOI: 10.1016/0022-0248(87)90139-4 |
0.661 |
|
| 1987 |
Brown L, Donnelly VM, McCrary VR. Optical diagnostic studies of trimethyl phosphine-containing radio-frequency discharges Plasma Chemistry and Plasma Processing. 7: 395-408. DOI: 10.1007/Bf01030486 |
0.685 |
|
| 1986 |
Donnelly VM, McCrary VR, Brasen D. Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP Mrs Proceedings. 75. DOI: 10.1557/Proc-75-567 |
0.765 |
|
| 1986 |
Mccrary VR, Donnelly VM, Brasen D, Appelbaum A, Farrow RC. Characterization of Excimer Laser Deposited Gaas Films From the Photolysis of Trimethylgallium and Trimethylarsine At 193 nm Mrs Proceedings. 75. DOI: 10.1557/Proc-75-223 |
0.763 |
|
| 1986 |
Donnelly VM, Brasen D, Appelbaum A, Geva M. Excimer laser induced deposition of InP Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 716-721. DOI: 10.1116/1.573840 |
0.514 |
|
| 1984 |
Donnelly VM, Karlicek RF. Excimer laser enhancement and probing of iii-v compound semiconductor chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 476: 102-109. DOI: 10.1117/12.942579 |
0.476 |
|
| 1984 |
Donnelly VM, Geva M, Long J, Karlicek RF. Excimer laser induced deposition of InP and indium-oxide films Applied Physics Letters. 44: 951-953. DOI: 10.1063/1.94608 |
0.405 |
|
| 1983 |
Donnelly VM, Geva M, Long J, Karlicek RF. Excimer Laser-Induced Deposition of InP and Indium-Oxide Films Mrs Proceedings. 29. DOI: 10.1557/PROC-29-73 |
0.401 |
|
| 1982 |
Karlicek RF, Donnelly VM, Johnston WD. Laser Spectroscopic Investigation of Gas-Phase Processes Relevant to Semiconductor Device Fabrication Mrs Proceedings. 17. DOI: 10.1557/PROC-17-151 |
0.368 |
|
| 1982 |
Karlicek RF, Donnelly VM, Johnston WD. Laser spectroscopic monitoring of a hydride transport vapor phase epitaxy (VPE) reactor Proceedings of Spie - the International Society For Optical Engineering. 323: 62-66. DOI: 10.1117/12.934277 |
0.346 |
|
| 1982 |
Donnelly VM, Flamm DL, Collins G. Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine discharge Journal of Vacuum Science and Technology. 21: 817-823. DOI: 10.1116/1.571829 |
0.395 |
|
| 1982 |
Donnelly VM, Karlicek RF. Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers Journal of Applied Physics. 53: 6399-6407. DOI: 10.1063/1.331512 |
0.434 |
|
| 1982 |
Karlicek RF, Donnelly VM, Collins GJ. Laser-induced metal deposition on InP Journal of Applied Physics. 53: 1084-1090. DOI: 10.1063/1.330520 |
0.457 |
|
| 1980 |
Donnelly V, Pitts W, McDonald J. C2O( 3Σ−): absolute reaction rates measured by laser induced fluoresence Chemical Physics. 49: 289-293. DOI: 10.1016/0301-0104(80)85266-9 |
0.349 |
|
| 1979 |
Donnelly V, Baronavski A, McDonald J. ArF laser photodissociation of NH3 at 193 nm: internal energy distributions in NH2 X̃2B1 and Ã2A1, and two-photon generatin of NH A 3Π and b 1Σ+ Chemical Physics. 43: 271-281. DOI: 10.1016/0301-0104(79)85194-0 |
0.353 |
|
| 1978 |
McDonald J, Baronavski A, Donnelly V. Multiphoton-vacuum-ultraviolet laser photodissociation of acetylene: Emission from electronically excited fragments Chemical Physics. 33: 161-170. DOI: 10.1016/0301-0104(78)87125-0 |
0.371 |
|
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