| Year |
Citation |
Score |
| 2015 |
Farrell S, Barnes T, Metzger WK, Park JH, Kodama R, Sivananthan S. In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy Journal of Electronic Materials. 44: 3202-3206. DOI: 10.1007/S11664-015-3913-3 |
0.308 |
|
| 2014 |
Park JH, Farrell S, Kodama R, Blissett C, Wang X, Colegrove E, Metzger WK, Gessert TA, Sivananthan S. Incorporation and activation of arsenic dopant in single-crystal cdte grown on si by molecular beam epitaxy Journal of Electronic Materials. 43: 2998-3003. DOI: 10.1007/S11664-014-3173-7 |
0.301 |
|
| 2012 |
Fahey S, Bommena R, Kodama R, Sporken R, Sivananthan S. Selective-area epitaxy of CdTe on CdTe/ZnTe/Si(211) through a nanopatterned silicon nitride mask Journal of Electronic Materials. 41: 2899-2907. DOI: 10.1007/S11664-012-2056-Z |
0.336 |
|
| 2011 |
Sivananthan S, Carmody M, Gilmore C, Garland J. Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells Proceedings of Spie - the International Society For Optical Engineering. 7995. DOI: 10.1117/12.888643 |
0.369 |
|
| 2011 |
Wang XJ, Chang Y, Hou YB, Becker CR, Kodama R, Aqariden F, Sivananthan S. Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3609786 |
0.395 |
|
| 2011 |
Wang XJ, Chang Y, Becker CR, Grein CH, Sivananthan S, Kodama R. Microstructure of heteroepitaxial ZnTe grown by molecular beam epitaxy on Si(211) substrates Journal of Electronic Materials. 40: 1860-1866. DOI: 10.1007/s11664-011-1648-3 |
0.413 |
|
| 2010 |
Wang XJ, Hou YB, Chang Y, Becker CR, Klie RF, Kodama R, Aqariden F, Sivananthan S. Growth of PbSe on ZnTe/GaAs(2 1 1)B by molecular beam epitaxy Journal of Crystal Growth. 312: 910-913. DOI: 10.1016/J.Jcrysgro.2009.11.068 |
0.305 |
|
| 2009 |
Wang XJ, Hou YB, Chang Y, Becker CR, Klie RF, Sivananthan S. Microstructure of heteroepitaxial ZnTe grown on GaAs(211)B by molecular beam epitaxy Journal of Electronic Materials. 38: 1776-1780. DOI: 10.1007/S11664-009-0826-Z |
0.345 |
|
| 2008 |
Wang XJ, Fulk C, Zhao FH, Li DH, Mukherjee S, Chang Y, Sporken R, Klie R, Shi Z, Grein CH, Sivananthan S. Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy Journal of Electronic Materials. 37: 1200-1204. DOI: 10.1007/S11664-008-0480-X |
0.34 |
|
| 2007 |
Chang Y, Fulk C, Zhao J, Grein CH, Sivananthan S. Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors Infrared Physics and Technology. 50: 284-290. DOI: 10.1016/j.infrared.2006.10.017 |
0.33 |
|
| 2005 |
Chang Y, Badano G, Jiang E, Garland JW, Zhao J, Grein CH, Sivananthan S. Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping Journal of Crystal Growth. 277: 78-84. DOI: 10.1016/J.Jcrysgro.2005.01.051 |
0.342 |
|
| 2004 |
Badano G, Chang Y, Garland JW, Sivananthan S. In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B Journal of Electronic Materials. 33: 583-589. DOI: 10.1007/S11664-004-0050-9 |
0.319 |
|
| 2004 |
Selamet Y, Zhou YD, Zhao J, Chang Y, Becker CR, Ashokan R, Grein CH, Sivananthan S. HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection Journal of Electronic Materials. 33: 503-508. |
0.331 |
|
| 2003 |
Aoki T, Smith DJ, Chang Y, Zhao J, Badano G, Grein C, Sivananthan S. Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy Applied Physics Letters. 82: 2275-2277. DOI: 10.1063/1.1566462 |
0.385 |
|
| 2003 |
Aoki T, Smith DJ, Chang Y, Zhao J, Zhou Y, Badano G, Grein C, Sivananthan S. HgCdTe/Te intergrowths and precipitates in HgCdTe alloys grown by molecular beam epitaxy Microscopy and Microanalysis. 9: 464-465. DOI: 10.1017/S1431927603442323 |
0.387 |
|
| 2003 |
Aoki T, Chang Y, Badano G, Zhao J, Grein C, Sivananthan S, Smith DJ. Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy Journal of Electronic Materials. 32: 703-709. DOI: 10.1007/S11664-003-0056-8 |
0.308 |
|
| 2003 |
Zhou YD, Zhao J, Boreiko R, Chang Y, Selamet Y, Ashokan R, Becker CR, Betz A, Sivananthan S. HgCdTe for far-infrared heterodyne detection Proceedings of Spie - the International Society For Optical Engineering. 5209: 99-106. |
0.372 |
|
| 2002 |
Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, Betz AL, Sivananthan S. Progress in far-infrared detection technology Proceedings of Spie - the International Society For Optical Engineering. 4795: 121-128. DOI: 10.1117/12.452270 |
0.431 |
|
| 2002 |
Badano G, Zhao J, Sivananthan S, Aoki T, Smith D. In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 251-252. DOI: 10.1109/MBE.2002.1037854 |
0.325 |
|
| 2001 |
Badano G, Daraselia M, Sivananthan S. In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1576-1579. DOI: 10.1116/1.1387455 |
0.313 |
|
| 2001 |
Selamet Y, Grein CH, Lee TS, Sivananthan S. Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1488-1491. DOI: 10.1116/1.1374628 |
0.352 |
|
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