Year |
Citation |
Score |
2015 |
Fahey S, Velicu S, Bommena R, Zhao J, Cowan V, Morath C, Sivananthan S. Proton irradiation of MWIR HgCdTe/CdZnTe Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2189829 |
0.353 |
|
2015 |
Bommena R, Ketharanathan S, Wijewarnasuriya PS, Dhar NK, Kodama R, Zhao J, Buurma C, Bergeson JD, Aqariden F, Velicu S. High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development Journal of Electronic Materials. 44: 3151-3156. DOI: 10.1007/S11664-015-3852-Z |
0.475 |
|
2014 |
Bergeson JD, Bommena R, Fahey S, Cowan V, Morath C, Velicu S. Mid and long wavelength infrared HgCdTe photodetectors exposed to proton radiation Proceedings of Spie - the International Society For Optical Engineering. 9226. DOI: 10.1117/12.2064074 |
0.417 |
|
2014 |
Bommena R, Bergeson JD, Kodama R, Zhao J, Ketharanathan S, Schaake H, Shih H, Velicu S, Aqariden F, Wijewarnasuriya PS, Dhar NK. High-performance SWIR HgCdTe FPA development on silicon substrates Proceedings of Spie - the International Society For Optical Engineering. 9070. DOI: 10.1117/12.2053020 |
0.485 |
|
2014 |
Fahey S, Boieriu P, Morath C, Guidry D, Treider L, Bommena R, Zhao J, Buurma C, Grein C, Sivananthan S. Influence of hydrogenation on electrical conduction in HgCdTe thin films on silicon Journal of Electronic Materials. 43: 2831-2840. DOI: 10.1007/S11664-014-3122-5 |
0.418 |
|
2013 |
Velicu S, Bommena R, Morley M, Zhao J, Fahey S, Cowan V, Morath C. Two color high operating temperature hgcdte photodetectors grown by molecular beam epitaxy on silicon substrates Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2025301 |
0.474 |
|
2013 |
Boieriu P, Velicu S, Bommena R, Buurma C, Blisset C, Grein C, Sivananthan S, Hagler P. High operation temperature of HgCdTe photodiodes by bulk defect passivation Proceedings of Spie - the International Society For Optical Engineering. 8631. DOI: 10.1117/12.2004708 |
0.423 |
|
2013 |
Buurma C, Boieriu P, Bommena R, Sivananthan S. Applications of the infrared measurement analyzer: Hydrogenated lwir hgcdte detectors Journal of Electronic Materials. 42: 3283-3287. DOI: 10.1007/S11664-013-2726-5 |
0.473 |
|
2013 |
Boieriu P, Buurma C, Bommena R, Blissett C, Grein C, Sivananthan S. Effects of inductively coupled plasma hydrogen on long-wavelength infrared hgcdte photodiodes Journal of Electronic Materials. 42: 3379-3384. DOI: 10.1007/S11664-013-2717-6 |
0.439 |
|
2012 |
Fahey S, Bommena R, Kodama R, Sporken R, Sivananthan S. Selective-area epitaxy of CdTe on CdTe/ZnTe/Si(211) through a nanopatterned silicon nitride mask Journal of Electronic Materials. 41: 2899-2907. DOI: 10.1007/S11664-012-2056-Z |
0.463 |
|
2011 |
Chang Y, Grein CH, Becker CR, Wang XJ, Duan Q, Ghosh S, Dreiske P, Bommena R, Zhao J, Carmody M, Aqariden F, Sivananthan S. CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts for leakage current reduction Journal of Electronic Materials. 40: 1854-1859. DOI: 10.1007/S11664-011-1680-3 |
0.366 |
|
2010 |
Dreiske P, Carmody M, Grein CH, Zhao J, Bommena R, Kilbourne CA, Kelley R, McCammon D, Brandl D. Molecular beam epitaxially grown HgTe and HgCdTe-on-silicon for space-based X-ray calorimetry applications Journal of Electronic Materials. 39: 1087-1096. DOI: 10.1007/S11664-010-1249-6 |
0.434 |
|
2008 |
Seldrum T, Bommena R, Samain L, Dumont J, Sivananthan S, Sporken R. Selective growth of CdTe on patterned CdTeSi (211) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1105-1109. DOI: 10.1116/1.2912090 |
0.431 |
|
2008 |
Bommena R, Seldrum T, Samain L, Sporken R, Sivananthan S, Brueck SRJ. Strain reduction in selectively grown CdTe by MBE on nanopatterned Silicon on Insulator (SOI) substrates Journal of Electronic Materials. 37: 1255-1260. DOI: 10.1007/S11664-008-0456-X |
0.474 |
|
2005 |
Bommena R, Fulk C, Zhao J, Lee TS, Sivananthan S, Brueck SRJ, Hersee SD. Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors Journal of Electronic Materials. 34: 704-709. DOI: 10.1007/S11664-005-0007-7 |
0.434 |
|
2004 |
Sun XY, Bommena R, Burckel D, Frauenglass A, Fairchild MN, Brueck SRJ, Garrett GA, Wraback M, Hersee SD. Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC Journal of Applied Physics. 95: 1450-1454. DOI: 10.1063/1.1639952 |
0.389 |
|
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