| Year |
Citation |
Score |
| 2019 |
Rezaei S, Xu Y, Pang SW. Control of neural probe shank flexibility by fluidic pressure in embedded microchannel using PDMS/PI hybrid substrate. Plos One. 14: e0220258. PMID 31339963 DOI: 10.1371/Journal.Pone.0220258 |
0.332 |
|
| 2018 |
Zhu S, Li H, Yang M, Pang SW. Label-Free Detection of Live Cancer Cells and DNA Hybridization using 3D Multilayered Plasmonic Biosensor. Nanotechnology. PMID 29848789 DOI: 10.1088/1361-6528/Aac8Fb |
0.334 |
|
| 2016 |
Zhu HT, Xue Q, Hui JN, Pang SW. Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components Ieee Transactions On Terahertz Science and Technology. 6: 696-705. DOI: 10.1109/Tthz.2016.2585345 |
0.343 |
|
| 2012 |
Ray V, Aida Y, Funakoshi R, Kato H, Pang SW. High resolution patterning on nonplanar substrates with large height variation using electron beam lithography Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 06F303. DOI: 10.1116/1.4755819 |
0.364 |
|
| 2008 |
Dukkipati VR, Pang SW. The immobilization of DNA molecules to electrodes in confined channels at physiological pH. Nanotechnology. 19: 465102. PMID 21836233 DOI: 10.1088/0957-4484/19/46/465102 |
0.761 |
|
| 2008 |
Cardozo BL, Pang SW. Control of DNA motion in microchannels integrated with dual electrodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2578-2582. DOI: 10.1116/1.2991859 |
0.377 |
|
| 2008 |
Cardozo BL, Pang SW. Patterning of polyfluorene based polymer light emitting diodes by reversal imprint lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2385-2389. DOI: 10.1116/1.2976602 |
0.315 |
|
| 2008 |
Peng C, Cardozo BL, Pang SW. Three-dimensional metal patterning over nanostructures by reversal imprint Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 632-635. DOI: 10.1116/1.2897319 |
0.303 |
|
| 2007 |
Yang B, Dukkipati VR, Li D, Cardozo BL, Pang SW. Stretching and selective immobilization of DNA in SU-8 micro- and nanochannels Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2352-2356. DOI: 10.1116/1.2806975 |
0.798 |
|
| 2007 |
Dukkipati VR, Pang SW. Integration of electrodes in Si channels using low temperature polymethylmethacrylate bonding Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 368. DOI: 10.1116/1.2647420 |
0.781 |
|
| 2007 |
Dukkipati VR, Pang SW. Precise DNA placement and stretching in electrode gaps using electric fields in a microfluidic system Applied Physics Letters. 90: 083901. DOI: 10.1063/1.2535556 |
0.764 |
|
| 2007 |
Kim JH, Dukkipati VR, Pang SW, Larson RG. Stretching and immobilization of DNA for studies of protein-DNA interactions at the single-molecule level Nanoscale Research Letters. 2: 185-201. DOI: 10.1007/S11671-007-9057-5 |
0.754 |
|
| 2006 |
Dukkipati VR, Kim JH, Pang SW, Larson RG. Protein-assisted stretching and immobilization of DNA molecules in a microchannel. Nano Letters. 6: 2499-504. PMID 17090080 DOI: 10.1021/Nl0617484 |
0.756 |
|
| 2006 |
Yang B, Pang SW. Multiple level nanochannels fabricated using reversal UV nanoimprint Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2984. DOI: 10.1116/1.2393247 |
0.339 |
|
| 2006 |
Peng C, Pang SW. Hybrid mold reversal imprint for three-dimensional and selective patterning Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2968. DOI: 10.1116/1.2366676 |
0.329 |
|
| 2006 |
Hu W, Yang B, Peng C, Pang SW. Three-dimensional SU-8 structures by reversal UV imprint Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2225. DOI: 10.1116/1.2335431 |
0.331 |
|
| 2006 |
Peng C, Pang SW. Three-dimensional nanochannels formed by fast etching of polymer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1941. DOI: 10.1116/1.2221319 |
0.367 |
|
| 2005 |
Lu CJ, Steinecker WH, Tian WC, Oborny MC, Nichols JM, Agah M, Potkay JA, Chan HK, Driscoll J, Sacks RD, Wise KD, Pang SW, Zellers ET. First-generation hybrid MEMS gas chromatograph. Lab On a Chip. 5: 1123-31. PMID 16175269 DOI: 10.1039/B508596A |
0.669 |
|
| 2005 |
Reano RM, Pang SW. Sealed three-dimensional nanochannels Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2995-2999. DOI: 10.1116/1.2121728 |
0.354 |
|
| 2005 |
Tian WC, Chan HKL, Lu CJ, Pang SW, Zellers ET. Multiple-stage microfabricated preconcentrator-focuser for micro gas chromatography system Journal of Microelectromechanical Systems. 14: 498-507. DOI: 10.1109/Jmems.2005.844842 |
0.683 |
|
| 2004 |
Reano RM, Kong YP, Low HY, Tan L, Wang F, Pang SW, Yee AF. Stability of functional polymers after plasticizer-assisted imprint lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3294-3299. DOI: 10.1116/1.1825013 |
0.303 |
|
| 2003 |
Tian W, Pang SW. Thick and thermally isolated Si microheaters for microfabricated preconcentrators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 274. DOI: 10.1116/1.1539065 |
0.697 |
|
| 2003 |
Tian WC, Pang SW, Lu CJ, Zellers ET. Microfabricated preconcentrator-focuser for a microscale gas chromatograph Journal of Microelectromechanical Systems. 12: 264-272. DOI: 10.1109/Jmems.2003.811748 |
0.708 |
|
| 2002 |
Tian W, Pang SW. Freestanding microheaters in Si with high aspect ratio microstructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1008. DOI: 10.1116/1.1479363 |
0.726 |
|
| 2001 |
Berg EW, Pang SW. Self-aligned process for single electron transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19: 1925. DOI: 10.1116/1.1406154 |
0.349 |
|
| 2001 |
Tian W, Pang SW. Released submicrometer Si microstructures formed by one-step dry etching Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19: 433. DOI: 10.1116/1.1356066 |
0.735 |
|
| 2001 |
Weigold J, Najafi K, Pang S. Design and fabrication of submicrometer, single crystal Si accelerometer Journal of Microelectromechanical Systems. 10: 518-524. DOI: 10.1109/84.967374 |
0.778 |
|
| 2000 |
Tian W-, Weigold JW, Pang SW. Comparison of Cl[sub 2] and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1890. DOI: 10.1116/1.1306303 |
0.782 |
|
| 1999 |
Berg EW, Pang SW. Low‐Pressure Etching of Nanostructures and Via Holes Using an Inductively Coupled Plasma System Journal of the Electrochemical Society. 146: 775-779. DOI: 10.1149/1.1391680 |
0.398 |
|
| 1999 |
Berg EW, Pang SW. Cl[sub 2] plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 2745. DOI: 10.1116/1.591056 |
0.338 |
|
| 1999 |
Weigold JW, Juan WH, Pang SW, Borenstein JT. Characterization of bending in single crystal Si beams and resonators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1336. DOI: 10.1116/1.590756 |
0.788 |
|
| 1999 |
Weigold J, Wong A, Nguyen C, Pang S. A merged process for thick single-crystal Si resonators and BiCMOS circuitry Journal of Microelectromechanical Systems. 8: 221-228. DOI: 10.1109/84.788624 |
0.797 |
|
| 1999 |
Rakhshandehroo M, Pang S. High current density Si field emission devices with plasma passivation and HfC coating Ieee Transactions On Electron Devices. 46: 792-797. DOI: 10.1109/16.753716 |
0.34 |
|
| 1999 |
Zheng WH, Xia J, Lam SD, Cheah KW, Rakhshandehroo MR, Pang SW. Ultraviolet emission of silicon quantum tips Applied Physics Letters. 74: 386-388. DOI: 10.1063/1.123079 |
0.337 |
|
| 1998 |
Weigold JW, Juan WH, Pang SW. Dry Etching of Deep Si Trenches for Released Resonators in a Cl2 Plasma Journal of the Electrochemical Society. 145: 1767-1771. DOI: 10.1149/1.1838555 |
0.807 |
|
| 1998 |
Weigold JW, Pang SW. High-aspect-ratio single-crystal Si microelectromechanical systems Proceedings of Spie. 3511: 242-251. DOI: 10.1117/12.324307 |
0.797 |
|
| 1998 |
Pang SW. Direct nano-printing on Al substrate using a SiC mold Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16: 1145. DOI: 10.1116/1.590024 |
0.349 |
|
| 1998 |
Juan W, Pang S. High-aspect-ratio Si vertical micromirror arrays for optical switching Journal of Microelectromechanical Systems. 7: 207-213. DOI: 10.1109/84.679383 |
0.442 |
|
| 1998 |
Weigold J, Pang S. Fabrication of thick Si resonators with a frontside-release etch-diffusion process Journal of Microelectromechanical Systems. 7: 201-206. DOI: 10.1109/84.679382 |
0.793 |
|
| 1998 |
Glembocki OJ, Tuchman JA, Dagata JA, Ko KK, Pang SW, Stutz CE. Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5 Applied Physics Letters. 73: 114-116. DOI: 10.1063/1.121785 |
0.337 |
|
| 1997 |
Eddy CR, Glembocki OJ, Shamamian VA, Leonhardt D, Holm RT, Butler JE, Thoms BD, Pang SW, Ko KK, Berg EW, Stutz CE. Characterization of GaAs surfaces subjected to a Cl2/Ar high density plasma etching process Materials Research Society Symposium - Proceedings. 448: 33-37. DOI: 10.1557/Proc-448-33 |
0.307 |
|
| 1997 |
Weigold JW, Juan WH, Pang SW, Borenstein JT. Optical interferometric characterization of membrane curvature in boron doped Si microstructures Proceedings of Spie - the International Society For Optical Engineering. 3223: 142-148. DOI: 10.1117/12.284474 |
0.783 |
|
| 1997 |
Juan WH, Pang SW. Batch-micromachined, high aspect ratio Si mirror arrays for optical switching applications Sensors. 1: 93-96. DOI: 10.1109/Sensor.1997.613590 |
0.459 |
|
| 1997 |
Pang SW, Thomas S, Chen HH. Precise etch stop for emitter etching of self-aligned heterojunction bipolar transistors Applied Surface Science. 758-764. DOI: 10.1016/S0169-4332(97)80178-X |
0.356 |
|
| 1997 |
Eddy CR, Glembocki OJ, Leonhardt D, Shamamian VA, Holm RT, Thoms BD, Butler JE, Pang SW. Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process Journal of Electronic Materials. 26: 1320-1325. DOI: 10.1007/S11664-997-0078-8 |
0.325 |
|
| 1997 |
Hanish CK, Grizzle JW, Chen HH, Kamlet LI, Thomas S, Terry FL, Pang SW. Modeling and algorithm development for automated optical endpointing of an HBT emitter etch Journal of Electronic Materials. 26: 1401-1408. DOI: 10.1007/S11664-997-0058-Z |
0.345 |
|
| 1996 |
Juan WH, Weigold JW, Pang SW. Dry Etching and Boron Diffusion of Heavily Doped, High Aspect Ratio Si Trenches Proceedings of Spie. 2879: 45-55. DOI: 10.1117/12.251222 |
0.796 |
|
| 1996 |
Rakhshandehroo MR, Sukardi F, Pang SW. Simulation and dry etching of field emitter tips in Si Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 14: 1832-1838. DOI: 10.1116/1.580345 |
0.393 |
|
| 1996 |
Juan WH, Pang SW. Control of etch profile for fabrication of Si microsensors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 14: 1189-1193. DOI: 10.1116/1.580264 |
0.464 |
|
| 1996 |
Juan W, Pang SW. Released Si microstructures fabricated by deep etching and shallow diffusion Ieee\/Asme Journal of Microelectromechanical Systems. 5: 18-23. DOI: 10.1109/84.485211 |
0.411 |
|
| 1995 |
Thomas S, Berg EW, Pang SW. In-Situ Fiberoptic Thermometry Measurements Of Wafer Temperature During Plasma Etching Using An Electron Cyclotron Resonance Source Mrs Proceedings. 406. DOI: 10.1557/Proc-406-75 |
0.346 |
|
| 1995 |
Ko KK, Pang SW. High Aspect Ratio Deep Via Holes in InP Etched Using Cl2 / Ar Plasma Journal of the Electrochemical Society. 142: 3945-3949. DOI: 10.1149/1.2048439 |
0.407 |
|
| 1995 |
Sung KT, Pang SW, Cole MW, Pearce N. Electrical Characterization and Surface Analysis of Dry Etch‐Induced Damage on Si after Etching in an ECR Source Journal of the Electrochemical Society. 142: 206-211. DOI: 10.1149/1.2043868 |
0.388 |
|
| 1995 |
Pang SW. Dry micromachining of high aspect ratio Si for microsensors Proceedings of Spie - the International Society For Optical Engineering. 2639: 234-243. DOI: 10.1117/12.221280 |
0.478 |
|
| 1995 |
Ko KK, Kamath K, Zia O, Berg E, Pang SW, Bhattacharya P. Fabrication of dry etched mirrors for In0.20Ga0.80As/GaAs waveguides using an electron cyclotron resonance source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 2709-2713. DOI: 10.1116/1.588249 |
0.382 |
|
| 1995 |
Thomas S, Ko KK, Pang SW. Monitoring InP and GaAs etched in Cl2/Ar using optical emission spectroscopy and mass spectrometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 894-899. DOI: 10.1116/1.579848 |
0.321 |
|
| 1995 |
Juan WH, Pang SW. High‐aspect‐ratio Si etching for microsensor fabrication Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 834-838. DOI: 10.1116/1.579837 |
0.442 |
|
| 1995 |
Cole MW, Ko KK, Pang SW. The influence of ion energy, ion flux, and etch temperature on the electrical and material quality of GaAs etched with an electron cyclotron resonance source Journal of Applied Physics. 78: 2712-2715. DOI: 10.1063/1.360067 |
0.333 |
|
| 1995 |
Glembocki OJ, Tuchman JA, Ko KK, Pang SW, Giordana A, Kaplan R, Stutz CE. Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface Applied Physics Letters. 66: 3054-3055. DOI: 10.1063/1.114275 |
0.343 |
|
| 1995 |
Snow ES, Juan WH, Pang SW, Campbell PM. Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source Applied Physics Letters. 66: 1729-1731. DOI: 10.1063/1.113348 |
0.413 |
|
| 1994 |
Ko KK, Pang SW. Surface Damage on GaAs Etched Using a Multipolar Electron Cyclotron Resonance Source Journal of the Electrochemical Society. 141: 255-258. DOI: 10.1149/1.2054694 |
0.313 |
|
| 1994 |
Sung KT, Juan WH, Pang SW, Dahimene M. Dependence of etch characteristics on charge particles as measured by Langmuir probe in a multipolar electron cyclotron resonance source Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 69-74. DOI: 10.1116/1.578860 |
0.313 |
|
| 1993 |
Thomas S, Pang SW. Evaluation of Dry Etching Induced Damage of Gainas Using Transmission Lines and Schottky Diodes Mrs Proceedings. 324. DOI: 10.1557/Proc-324-421 |
0.367 |
|
| 1993 |
Kahaian DJ, Pang SW. In-Situ Monitoring by Mass Spectrometry for GaAs Etched with An Electron Cyclotron Resonance Source Mrs Proceedings. 324. DOI: 10.1557/Proc-324-329 |
0.331 |
|
| 1993 |
Sung KT, Juan WH, Pang SW, Dahimene M. Relating Photoresist Etch Characteristics to Langmuir Probe Measurements in an Electron Cyclotron Resonance Source Mrs Proceedings. 324. DOI: 10.1557/Proc-324-305 |
0.33 |
|
| 1993 |
Glembocki O, Tuchman J, Ko K, Pang S, Giordana A, Stutz C. Photoreflectance Characterization of Etch-Induced Damage in Dry Etched GaAs Mrs Proceedings. 324. DOI: 10.1557/Proc-324-153 |
0.352 |
|
| 1993 |
Sung KT, Pang SW. Etching of Si with Cl2 using an electron cyclotron resonance source Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 1206-1210. DOI: 10.1116/1.578494 |
0.409 |
|
| 1993 |
Bride JA, Baskaran S, Taylor N, Halloran JW, Juan WH, Pang SW, O’Donnell M. Photolithographic micromolding of ceramics using plasma etched polyimide patterns Applied Physics Letters. 63: 3379-3381. DOI: 10.1063/1.110151 |
0.339 |
|
| 1993 |
Sung KT, Li WQ, Li SH, Pang SW, Bhattacharya PK. Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET Electronics Letters. 29: 277-278. DOI: 10.1049/El:19930189 |
0.416 |
|
| 1992 |
Sung KT, Pang SW. Selective Etching of Bilayer Photoresist Using a Multipolar Electron Cyclotron Resonance Source Journal of the Electrochemical Society. 139: 3599-3602. DOI: 10.1149/1.2069129 |
0.355 |
|
| 1992 |
Pang SW. Etching of photoresist using oxygen plasma generated by a multipolar electron cyclotron resonance source Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 1118. DOI: 10.1116/1.586087 |
0.338 |
|
| 1992 |
Pang SW. Comparison between etching in Cl2 and BCl3 for compound semiconductors using a multipolar electron cyclotron resonance source Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 2703. DOI: 10.1116/1.586030 |
0.338 |
|
| 1992 |
Passow ML, Pender JTP, Brake ML, Sung KT, Liu Y, Pang SW, Elta ME. Relative fluorine concentrations in radio frequency/electron cyclotron resonance hybrid glow discharges Applied Physics Letters. 60: 818-820. DOI: 10.1063/1.107428 |
0.302 |
|
| 1991 |
Pang SW. A Comparison Between Dry Etching with an Electron Cyclotron Resonance Source and Reactive Ion Etching for GaAs and InP Mrs Proceedings. 240. DOI: 10.1557/Proc-240-273 |
0.36 |
|
| 1991 |
Sung KT, Pang SW. Low Temperature Silicon Oxidation with Electron Cyclotron Resonance Oxygen Plasma Mrs Proceedings. 236. DOI: 10.1557/Proc-236-319 |
0.331 |
|
| 1991 |
Pang SW. Etching of GaAs and InP using a hybrid microwave and radio-frequency system Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9: 3530. DOI: 10.1116/1.585838 |
0.346 |
|
| 1990 |
Pang SW. Plasma-deposited amorphous carbon films as planarization layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8: 1980. DOI: 10.1116/1.584887 |
0.31 |
|
| 1990 |
Pang SW, Horn MW. Amorphous carbon films as planarization layers deposited by plasma-enhanced chemical vapor deposition Ieee Electron Device Letters. 11: 391-393. DOI: 10.1109/55.62966 |
0.302 |
|
| 1989 |
Pang SW. Erratum: Dry etching induced damage on vertical sidewalls of GaAs channels [J. Vac. Sci. Technol. B 6, 1916 (1988)] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7: 236. DOI: 10.1116/1.584724 |
0.304 |
|
| 1988 |
Pang SW, Goodhue WD, Geis MW. Submicrometer Structures Fabricated by Masked Ion Beam Lithography and Dry Etching Journal of the Electrochemical Society. 135: 1526-1529. DOI: 10.1149/1.2096046 |
0.391 |
|
| 1988 |
Pang SW. Dry etching induced damage on vertical sidewalls of GaAs channels Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 1916. DOI: 10.1116/1.584132 |
0.348 |
|
| 1988 |
Pang SW. Pattern transfer by dry etching through stencil masks Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 249. DOI: 10.1116/1.584016 |
0.348 |
|
| 1987 |
Pang SW. Masked ion beam lithography for submicrometer-gate-length transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 215. DOI: 10.1116/1.583868 |
0.37 |
|
| 1987 |
Goodhue WD, Pang SW, Johnson GD, Astolfi DK, Ehrlich DJ. Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching Applied Physics Letters. 51: 1726-1728. DOI: 10.1063/1.98557 |
0.36 |
|
| 1986 |
Geis MW, Pang SW, Efremow NN. Hot Jet Etching through Stencil Masks Mrs Proceedings. 76. DOI: 10.1557/Proc-76-143 |
0.367 |
|
| 1986 |
Pang SW. SURFACE DAMAGE ON GaAs INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING Journal of the Electrochemical Society. 133: 784-787. DOI: 10.1149/1.2108677 |
0.336 |
|
| 1986 |
Pang SW. Sub-100-nm-wide, deep trenches defined by reactive ion etching Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 341. DOI: 10.1116/1.583327 |
0.352 |
|
| 1986 |
Pang SW. Radiation damage in dry etching Microelectronic Engineering. 5: 351-361. DOI: 10.1016/0167-9317(86)90064-X |
0.409 |
|
| 1984 |
Pang SW, Geis MW, Efremow NN, Lincoln GA. EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GaAs Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena. 3: 398-401. DOI: 10.1116/1.583272 |
0.31 |
|
| 1983 |
Pang SW, Lincoln GA, McCelland RW, DeGraff PD, Geis MW, Piacentini WJ. EFFECTS OF DRY ETCHING ON GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 1334-1337. DOI: 10.1116/1.582741 |
0.377 |
|
| 1983 |
Lincoln GA, Geis MW, Pang S, Efremow NN. LARGE AREA ION BEAM ASSISTED ETCHING OF GaAs WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 1043-1046. DOI: 10.1116/1.582671 |
0.354 |
|
| 1983 |
Pang SW, Rathman DD, Silversmith DJ, Mountain RW, DeGraff PD. Damage induced in Si by ion milling or reactive ion etching Journal of Applied Physics. 54: 3272-3277. DOI: 10.1063/1.332437 |
0.406 |
|
| 1982 |
Pang S, Brueck SRJ. Laser-Induced Fluorescence Diagnostics of CF4/O2/H2 Plasma Etching Mrs Proceedings. 17. DOI: 10.1557/Proc-17-161 |
0.347 |
|
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