Year |
Citation |
Score |
2020 |
Chae K, Hwang J, Chagarov E, Kummel A, Cho K. Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films Journal of Applied Physics. 128: 54101. DOI: 10.1063/5.0011547 |
0.315 |
|
2018 |
Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim MJ, Fruhberger B, Taur Y, McIntyre PC, Kummel AC. Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging. Acs Applied Materials & Interfaces. PMID 30073827 DOI: 10.1021/Acsami.8B06547 |
0.448 |
|
2018 |
Chagarov EA, Kavrik MS, Fang Z, Tsai W, Kummel AC. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers Applied Surface Science. 443: 644-654. DOI: 10.1016/J.Apsusc.2018.02.041 |
0.474 |
|
2017 |
Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC. Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells. Acs Applied Materials & Interfaces. PMID 28452464 DOI: 10.1021/Acsami.7B01838 |
0.459 |
|
2017 |
Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081 |
0.47 |
|
2017 |
Edmonds M, Wolf S, Chagarov E, Kent T, Park JH, Holmes R, Alvarez D, Droopad R, Kummel AC. Self-limiting CVD of a passivating SiO x control layer on InGaAs(001)-(2x4) with the prevention of III-V oxidation Surface Science. 660: 31-38. DOI: 10.1016/J.Susc.2017.02.006 |
0.456 |
|
2016 |
Chagarov E, Sardashti K, Kummel AC, Lee YS, Haight R, Gershon TS. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics. The Journal of Chemical Physics. 144: 104704. PMID 26979701 DOI: 10.1063/1.4943270 |
0.326 |
|
2016 |
Chagarov E, Sardashti K, Haight R, Mitzi DB, Kummel AC. Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams Journal of Chemical Physics. 145. DOI: 10.1063/1.4959591 |
0.324 |
|
2016 |
Chagarov EA, Porter L, Kummel AC. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation Journal of Chemical Physics. 144. DOI: 10.1063/1.4941947 |
0.515 |
|
2015 |
Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces. Acs Applied Materials & Interfaces. 7: 26275-83. PMID 26575590 DOI: 10.1021/Acsami.5B08727 |
0.482 |
|
2015 |
Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer. Journal of the American Chemical Society. 137: 8526-33. PMID 26070022 DOI: 10.1021/Jacs.5B03660 |
0.474 |
|
2015 |
Park SW, Kim H, Chagarov E, Siddiqui S, Sahu B, Yoshida N, Kachian J, Feenstra R, Kummel AC. Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g) Surface Science. DOI: 10.1016/J.Susc.2016.01.009 |
0.486 |
|
2014 |
Kerr AJ, Chagarov E, Gu S, Kaufman-Osborn T, Madisetti S, Wu J, Asbeck PM, Oktyabrsky S, Kummel AC. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. The Journal of Chemical Physics. 141: 104702. PMID 25217942 DOI: 10.1063/1.4894541 |
0.498 |
|
2014 |
Kaufman-Osborn T, Chagarov EA, Kummel AC. Atomic imaging and modeling of H2O2(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface. The Journal of Chemical Physics. 140: 204708. PMID 24880312 DOI: 10.1063/1.4878496 |
0.49 |
|
2014 |
Kaufman-Osborn T, Chagarov EA, Park SW, Sahu B, Siddiqui S, Kummel AC. Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing Surface Science. 630: 273-279. DOI: 10.1016/J.Susc.2014.08.027 |
0.521 |
|
2014 |
Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM. Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Applied Surface Science. 317: 1022-1027. DOI: 10.1016/J.Apsusc.2014.09.028 |
0.505 |
|
2013 |
Kent TJ, Edmonds M, Chagarov E, Droopad R, Kummel AC. Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum. The Journal of Chemical Physics. 139: 244706. PMID 24387387 DOI: 10.1063/1.4852155 |
0.494 |
|
2013 |
Ahn J, Kent T, Chagarov E, Tang K, Kummel AC, McIntyre PC. Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces Applied Physics Letters. 103. DOI: 10.1063/1.4818330 |
0.493 |
|
2012 |
Melitz W, Clemens JB, Shen J, Chagarov EA, Lee S, Lee JS, Royer JE, Holland M, Bentley S, McIntyre D, Thayne I, Droopad R, Kummel AC. Scanning probe microscopy imaging before and after atomic layer oxide deposition on a compound semiconductor surface Solid State Phenomena. 187: 9-10. DOI: 10.4028/Www.Scientific.Net/Ssp.187.9 |
0.369 |
|
2011 |
Chagarov EA, Kummel AC. Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2). The Journal of Chemical Physics. 135: 244705. PMID 22225179 DOI: 10.1063/1.3657439 |
0.489 |
|
2010 |
Bishop SR, Clemens JB, Chagarov EA, Shen J, Kummel AC. Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces. The Journal of Chemical Physics. 133: 194702. PMID 21090868 DOI: 10.1063/1.3501371 |
0.427 |
|
2010 |
Shen J, Chagarov EA, Feldwinn DL, Melitz W, Santagata NM, Kummel AC, Droopad R, Passlack M. Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. The Journal of Chemical Physics. 133: 164704. PMID 21033816 DOI: 10.1063/1.3497040 |
0.469 |
|
2010 |
Clemens JB, Chagarov EA, Holland M, Droopad R, Shen J, Kummel AC. Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition. The Journal of Chemical Physics. 133: 154704. PMID 20969416 DOI: 10.1063/1.3487737 |
0.481 |
|
2010 |
Shen J, Clemens JB, Chagarov EA, Feldwinn DL, Melitz W, Song T, Bishop SR, Kummel AC, Droopad R. Structural and electronic properties of group III rich In 0.53Ga0.47As(001) Surface Science. 604: 1757-1766. DOI: 10.1016/J.Susc.2010.07.001 |
0.414 |
|
2009 |
Chagarov EA, Kummel AC. Ab initio molecular dynamics simulations of properties of a-Al2O3/vacuum and a-ZrO2/vacuum vs a-Al2O3Ge(100)(2 x 1) and a-ZrO2Ge(100)(2 x 1) interfaces. The Journal of Chemical Physics. 130: 124717. PMID 19334882 DOI: 10.1063/1.3078035 |
0.448 |
|
2009 |
Houssa M, Chagarov E, Kummel A. Surface defects and passivation of Ge and III-V interfaces Mrs Bulletin. 34: 504-513. DOI: 10.1557/Mrs2009.138 |
0.39 |
|
2009 |
Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006 |
0.471 |
|
2009 |
Chagarov EA, Kummel AC. Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs Surface Science. 603: 3191-3200. DOI: 10.1016/J.Susc.2009.08.009 |
0.44 |
|
2008 |
Chagarov EA, Kummel AC. Formation mechanisms of polar and non-polar amorphous oxide-semiconductor interfaces Surface Science. 602: L74-L78. DOI: 10.1016/J.Susc.2008.04.026 |
0.445 |
|
2005 |
Chagarov E, Demkov AA, Adams JB. Ab initio calculations of surface phase diagrams of silica polymorphs Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.075417 |
0.563 |
|
2004 |
Chagarov E, Adams JB, Kieffer J. Application of design of experiments methodology to optimization of classical molecular dynamics generation of amorphous SiO2 structure Modelling and Simulation in Materials Science and Engineering. 12: 337-356. DOI: 10.1088/0965-0393/12/2/013 |
0.497 |
|
2003 |
Chagarov E, Adams JB. Molecular dynamics simulations of mechanical deformation of amorphous silicon dioxide during chemical-mechanical polishing Journal of Applied Physics. 94: 3853-3861. DOI: 10.1063/1.1602551 |
0.501 |
|
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