| Year |
Citation |
Score |
| 2020 |
Storm DF, Growden TA, Cornuelle EM, Peri PR, Osadchy T, Daulton JW, Zhang W, Katzer DS, Hardy MT, Nepal N, Molnar R, Brown ER, Berger PR, Smith DJ, Meyer DJ. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214. DOI: 10.1116/6.0000052 |
0.72 |
|
| 2020 |
Zhang W, Growden TA, Storm DF, Meyer DJ, Berger PR, Brown ER. Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models Ieee Transactions On Electron Devices. 67: 75-79. DOI: 10.1109/Ted.2019.2955360 |
0.65 |
|
| 2020 |
Cornuelle EM, Growden TA, Storm DF, Brown ER, Zhang W, Downey BP, Gokhale V, Ruppalt LB, Champlain JG, Peri P, McCartney MR, Smith DJ, Meyer DJ, Berger PR. Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Aip Advances. 10: 055307. DOI: 10.1063/5.0005062 |
0.7 |
|
| 2020 |
Growden TA, Storm DF, Cornuelle EM, Brown ER, Zhang W, Downey BP, Roussos JA, Cronk N, Ruppalt LB, Champlain JG, Berger PR, Meyer DJ. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501. DOI: 10.1063/1.5139219 |
0.713 |
|
| 2019 |
Growden TA, Cornuelle EM, Storm DF, Zhang W, Brown ER, Whitaker LM, Daulton JW, Molnar R, Meyer DJ, Berger PR. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters. 114: 203503. DOI: 10.1063/1.5095056 |
0.724 |
|
| 2018 |
Growden TA, Zhang W, Brown ER, Storm DF, Meyer DJ, Berger PR. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures. Light, Science & Applications. 7: 17150. PMID 30839526 DOI: 10.1038/Lsa.2017.150 |
0.668 |
|
| 2018 |
Growden TA, Zhang W, Brown ER, Storm DF, Hansen K, Fakhimi P, Meyer DJ, Berger PR. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes Applied Physics Letters. 112: 033508. DOI: 10.1063/1.5010794 |
0.734 |
|
| 2017 |
Storm DF, Growden TA, Zhang W, Brown ER, Nepal N, Katzer DS, Hardy MT, Berger PR, Meyer DJ. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110. DOI: 10.1116/1.4977779 |
0.697 |
|
| 2016 |
Zhang W, Brown ER, Growden TA, Berger PR, Droopad R. A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes Ieee Transactions On Electron Devices. 63: 4993-4997. DOI: 10.1109/Ted.2016.2617681 |
0.624 |
|
| 2016 |
Growden TA, Storm DF, Zhang W, Brown ER, Meyer DJ, Fakhimi P, Berger PR. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy Applied Physics Letters. 109. DOI: 10.1063/1.4961442 |
0.726 |
|
| 2015 |
Growden TA, Brown ER, Zhang W, Droopad R, Berger PR. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time Applied Physics Letters. 107. DOI: 10.1063/1.4933258 |
0.613 |
|
| 2012 |
Ramesh A, Growden TA, Berger PR, Loo R, Vandervorst W, Douhard B, Caymax M. Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 59: 602-609. DOI: 10.1109/Ted.2011.2180532 |
0.696 |
|
| 2012 |
Morrison JT, Storm M, Chowdhury E, Akli KU, Feldman S, Willis C, Daskalova RL, Growden T, Berger P, Ditmire T, Van Woerkom L, Freeman RR. Selective deuteron production using target normal sheath acceleration Physics of Plasmas. 19. DOI: 10.1063/1.3695061 |
0.527 |
|
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