| Year |
Citation |
Score |
| 2020 |
Modak S, Chernyak L, Khodorov S, Lubomirsky I, Ruzin A, Xian M, Ren F, Pearton SJ. Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers Ecs Journal of Solid State Science and Technology. 9: 45018. DOI: 10.1149/2162-8777/Ab902B |
0.444 |
|
| 2020 |
Modak S, Chernyak L, Xian M, Ren F, Pearton SJ, Khodorov S, Lubomirsky I, Ruzin A, Dashevsky Z. Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702. DOI: 10.1063/5.0017742 |
0.6 |
|
| 2020 |
Dzundza B, Nykyruy L, Parashchuk T, Ivakin E, Yavorsky Y, Chernyak L, Dashevsky Z. Transport and thermoelectric performance of n-type PbTe films Physica B-Condensed Matter. 588: 412178. DOI: 10.1016/J.Physb.2020.412178 |
0.304 |
|
| 2019 |
Modak S, Chernyak L, Khodorov S, Lubomirsky I, Yang J, Ren F, Pearton SJ. Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers Ecs Journal of Solid State Science and Technology. 8: Q3050-Q3053. DOI: 10.1149/2.0101907Jss |
0.463 |
|
| 2019 |
Modak S, Lee J, Chernyak L, Yang J, Ren F, Pearton SJ, Khodorov S, Lubomirsky I. Electron injection-induced effects in Si-doped β-Ga2O3 Aip Advances. 9: 015127. DOI: 10.1063/1.5079730 |
0.628 |
|
| 2018 |
Yang J, Chen Z, Ren F, Pearton SJ, Yang G, Kim J, Lee J, Flitsiyan E, Chernyak L, Kuramata A. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011206. DOI: 10.1116/1.5013155 |
0.417 |
|
| 2018 |
Lee J, Fredricksen CJ, Flitsiyan E, Peale RE, Chernyak L, Taghipour Z, Casias L, Kazemi A, Krishna S, Myers S. Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices Journal of Applied Physics. 123: 235104. DOI: 10.1063/1.5030444 |
0.581 |
|
| 2018 |
Lee J, Flitsiyan E, Chernyak L, Yang J, Ren F, Pearton SJ, Meyler B, Salzman YJ. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length Applied Physics Letters. 112: 082104. DOI: 10.1063/1.5011971 |
0.568 |
|
| 2017 |
Lee J, Flitsiyan E, Chernyak L, Salzman J, Meyler B. Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0191711Jss |
0.465 |
|
| 2017 |
Yang J, Ren F, Khanna R, Bevlin K, Geerpuram D, Tung L, Lin J, Jiang H, Lee J, Flitsiyan E, Chernyak L, Pearton SJ, Kuramata A. Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201. DOI: 10.1116/1.4986300 |
0.358 |
|
| 2017 |
Lee J, Yadav A, Antia M, Zaffino V, Flitsiyan E, Chernyak L, Salzman J, Meyler B, Ahn S, Ren F, Pearton SJ. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors Radiation Effects and Defects in Solids. 172: 250-256. DOI: 10.1080/10420150.2017.1300903 |
0.544 |
|
| 2016 |
Lee J, Flitsiyan E, Chernyak L, Ahn S, Ren F, Yuna L, Pearton SJ, Kim J, Meyler B, Salzman J. Optical Signature of the Electron Injection in Ga2O3 Ecs Journal of Solid State Science and Technology. 6: Q3049-Q3051. DOI: 10.1149/2.0101702Jss |
0.427 |
|
| 2016 |
Yadav A, Glasscock C, Flitsiyan E, Chernyak L, Lubomirsky I, Khodorov S, Salzman J, Meyler B, Coppola C, Guay S, Boivin J. Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors Radiation Effects and Defects in Solids. 1-8. DOI: 10.1080/10420150.2016.1170018 |
0.558 |
|
| 2015 |
Yadav A, Flitsiyan E, Chernyak L, Ren F, Pearton SJ, Johnson JW, Lubomirsky I. Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.511 |
0.593 |
|
| 2015 |
Egorova SG, Chernichkin VI, Dudnik AO, Kasiyan VA, Chernyak L, Danilov SN, Ryabova LI, Khokhlov DR. Discrimination of Conductive Surface Electron States by Laser Terahertz Radiation in PbSe-A Base for Pb1-xSnxSe Topological Crystalline Insulators Ieee Transactions On Terahertz Science and Technology. 5: 659-664. DOI: 10.1109/Tthz.2015.2436712 |
0.326 |
|
| 2015 |
Yadav A, Flitsiyan E, Chernyak L, Hwang Y, Hsieh Y, Lei L, Ren F, Pearton SJ, Lubomirsky I. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors Radiation Effects and Defects in Solids. 170: 377-385. DOI: 10.1080/10420150.2015.1010170 |
0.542 |
|
| 2014 |
Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4868632 |
0.506 |
|
| 2013 |
Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi YY, Ren F, Pearton SJ, Lo CF, Johnson JW, Danilova E. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4792240 |
0.523 |
|
| 2013 |
Huang J, Chu S, Kong J, Zhang L, Schwarz CM, Wang G, Chernyak L, Chen Z, Liu J. ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires Advanced Optical Materials. 1: 179-185. DOI: 10.1002/Adom.201200062 |
0.43 |
|
| 2012 |
Nath J, Schwarz C, Smith E, Ghosh C, Peale RE, Chernyak L, Buchwald WR. Cathodoluminescence of conducting gratings and implications for electron-beam investigations of nano-photonic devices Proceedings of Spie - the International Society For Optical Engineering. 8376. DOI: 10.1117/12.918669 |
0.464 |
|
| 2012 |
Lo C, Liu L, Kang TS, Ren F, Schwarz C, Flitsiyan E, Chernyak L, Kim H, Kim J, Pil Yun S, Laboutin O, Cao Y, Johnson JW, Pearton SJ. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 031202. DOI: 10.1116/1.3698402 |
0.441 |
|
| 2012 |
Kasiyan V, Dashevsky Z, Schwarz CM, Shatkhin M, Flitsiyan E, Chernyak L, Khokhlov D. Infrared detectors based on semiconductor p-n junction of PbSe Journal of Applied Physics. 112: 86101. DOI: 10.1063/1.4759011 |
0.371 |
|
| 2011 |
Schwarz C, Lin Y, Shathkin M, Flitsiyan E, Chernyak L. Cathodoluminescence studies of electron irradiation effects in n-type ZnO. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 334204. PMID 21813956 DOI: 10.1088/0953-8984/23/33/334204 |
0.528 |
|
| 2011 |
Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J, Liu J. Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10. PMID 21725304 DOI: 10.1038/Nnano.2011.97 |
0.344 |
|
| 2011 |
Nath J, Schwarz C, Lin Y, Smith E, Peale RE, Chernyak L, Buchwald WR, Lee J. Cathodoluminescence study of silver and gold lamellar gratings Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884162 |
0.36 |
|
| 2011 |
Flitsiyan E, Schwarz C, Chernyak L, Peale RE, Dashevsky Z, Vernetson W. Neutron irradiation-induced enhancement of electronic carrier transport in ZnO Radiation Effects and Defects in Solids. 166: 104-108. DOI: 10.1080/10420150.2010.507672 |
0.449 |
|
| 2011 |
Schwarz C, Flitsiyan E, Chernyak L, Casian V, Schneck R, Dashevsky Z, Chu S, Liu JL. Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires Journal of Applied Physics. 110. DOI: 10.1063/1.3633224 |
0.513 |
|
| 2011 |
Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection Applied Physics Letters. 98. DOI: 10.1063/1.3551628 |
0.402 |
|
| 2011 |
Lin Y, Shatkhin M, Flitsiyan E, Chernyak L, Dashevsky Z, Chu S, Liu JL. Minority carrier transport in p-ZnO nanowires Journal of Applied Physics. 109. DOI: 10.1063/1.3530732 |
0.564 |
|
| 2010 |
Cahen D, Gilet JM, Schmitz C, Chernyak L, Gartsman K, Jakubowicz A. Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals. Science (New York, N.Y.). 258: 271-4. PMID 17835124 DOI: 10.1126/Science.258.5080.271 |
0.403 |
|
| 2010 |
Dashevsky Z, Kreizman R, Shufer E, Kasiyan V, Flitsiyan E, Shatkhin M, Chernyak L. Nanocrystalline PbTe Films Journal of Nanoelectronics and Optoelectronics. 4: 296-301. DOI: 10.1166/Jno.2009.1042 |
0.318 |
|
| 2010 |
Shufer E, Dashevsky Z, Kasiyan V, Flitsiyan E, Chernyak L, Gartsman K. Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films Physica B-Condensed Matter. 405: 1058-1061. DOI: 10.1016/J.Physb.2009.11.004 |
0.425 |
|
| 2009 |
Flitsiyan E, Swartz C, Peale RE, Lupan O, Chernyak L, Chow L, Vernetson WG, Dashevsky Z. Neutron transmutation doping and radiation hardness for solution-grown bulk and nano-structured ZnO Materials Research Society Symposium Proceedings. 1108: 55-60. DOI: 10.1557/Proc-1108-A05-03 |
0.392 |
|
| 2009 |
Dashevsky Z, Kasiyan V, Asmontas S, Gradauskas J, Shirmulis E, Flitsiyan E, Chernyak L. Photothermal effect in narrow band gap PbTe semiconductor Journal of Applied Physics. 106: 76105. DOI: 10.1063/1.3243081 |
0.354 |
|
| 2009 |
Lin Y, Flitsyian E, Chernyak L, Malinauskas T, Aleksiejunas R, Jarasiunas K, Lim W, Pearton SJ, Gartsman K. Optical and electron beam studies of carrier transport in quasibulk GaN Applied Physics Letters. 95: 092101. DOI: 10.1063/1.3220062 |
0.553 |
|
| 2008 |
Peale RE, Lopatiuk-Tirpak O, Cleary JW, Santos S, Henderson J, Clark D, Chernyak L, Winningham TA, Del Barco E, Heinrich H, Buchwald WR. Propagation of high-frequency surface plasmons on gold Materials Research Society Symposium Proceedings. 1077: 1-6. DOI: 10.1364/Josab.25.001708 |
0.35 |
|
| 2008 |
Alivov YI, Xiao B, Akarca-Biyikli S, Fan Q, Morkoç H, Johnstone D, Lopatiuk-Tirpak O, Chernyak L, Litton W. Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods Journal of Physics: Condensed Matter. 20: 085201. DOI: 10.1088/0953-8984/20/8/085201 |
0.501 |
|
| 2008 |
Chernyak L, Schwarz C, Flitsiyan ES, Chu S, Liu JL, Gartsman K. Electron beam induced current profiling of ZnO p-n homojunctions Applied Physics Letters. 92. DOI: 10.1063/1.2896613 |
0.607 |
|
| 2008 |
Lupan O, Chow L, Chai G, Schulte A, Park S, Lopatiuk-Tirpak O, Chernyak L, Heinrich H. Biopolymer-assisted self-assembly of ZnO nanoarchitectures from nanorods Superlattices and Microstructures. 43: 292-302. DOI: 10.1016/J.Spmi.2007.12.003 |
0.333 |
|
| 2008 |
Lupan O, Chow L, Chai G, Chernyak L, Lopatiuk-Tirpak O, Heinrich H. Focused-ion-beam fabrication of ZnO nanorod-based UV photodetector using the in-situ lift-out technique Physica Status Solidi (a). 205: 2673-2678. DOI: 10.1002/Pssa.200824233 |
0.36 |
|
| 2007 |
Lopatiuk-Tirpak O, Chernyak L, Borisov BA, Kuryatkov VV, Nikishin SA, Gartsman K. Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN /AlGaN short period superlattice Applied Physics Letters. 91: 182103. DOI: 10.1063/1.2805190 |
0.635 |
|
| 2007 |
Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K. Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN Applied Physics Letters. 91: 92107. DOI: 10.1063/1.2776866 |
0.633 |
|
| 2007 |
Lopatiuk-Tirpak O, Nootz G, Flitsiyan E, Chernyak L, Mandalapu LJ, Yang Z, Liu JL, Gartsman K, Osinsky A. Influence of electron injection on the temporal response of ZnO homojunction photodiodes Applied Physics Letters. 91: 42115. DOI: 10.1063/1.2764559 |
0.486 |
|
| 2007 |
Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K, Feldman Y. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN Applied Physics Letters. 90. DOI: 10.1063/1.2733620 |
0.546 |
|
| 2007 |
Lopatiuk O, Chernyak L, Feldman Y, Gartsman K. Studies of electron trapping in GaN doped with carbon Thin Solid Films. 515: 4365-4368. DOI: 10.1016/J.Tsf.2006.07.102 |
0.576 |
|
| 2007 |
Lopatiuk-Tirpak O, Chernyak L. Studies of minority carrier transport in ZnO Superlattices and Microstructures. 42: 201-205. DOI: 10.1016/J.Spmi.2007.04.030 |
0.54 |
|
| 2007 |
Alivov Y, Özgür Ü, Gu X, Liu C, Moon Y, Morkoç H, Lopatiuk O, Chernyak L, Litton CW. Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties Journal of Electronic Materials. 36: 409-413. DOI: 10.1007/S11664-006-0061-9 |
0.447 |
|
| 2006 |
Alivov Y, Bo X, Akarca-Biyikli S, Qian F, Johnstone D, Lopatiuk-Tirpak O, Chernyak L, Litton C, Morkoç H. Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K07-16 |
0.47 |
|
| 2006 |
Lopatiuk-Tirpak O, Chernyak L, Mandalapu LJ, Yang Z, Liu JL, Gartsman K, Feldman Y, Dashevsky Z. Influence of electron injection on the photoresponse of ZnO homojunction diodes Applied Physics Letters. 89. DOI: 10.1063/1.2360233 |
0.597 |
|
| 2006 |
Lopatiuk-Tirpak O, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Gartsman K, Feldman Y, Osinsky A, Chow P. Studies of minority carrier diffusion length increase in p -type ZnO:Sb Journal of Applied Physics. 100. DOI: 10.1063/1.2358844 |
0.563 |
|
| 2006 |
Lopatiuk-Tirpak O, Schoenfeld WV, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Osinsky A, Chow P. Carrier concentration dependence of acceptor activation energy in p-type ZnO Applied Physics Letters. 88. DOI: 10.1063/1.2206700 |
0.432 |
|
| 2005 |
Osinsky A, Dong J, Xie JQ, Hertog B, Dabiran AM, Chow PP, Pearton SJ, Norton DP, Look DC, Schoenfeld W, Lopatiuk O, Chernyak L, Cheung M, Cartwright A, Gerhold M. ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff18-01-Ee09-01 |
0.3 |
|
| 2005 |
Yang HS, Han SY, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Dabiran AM, Chow PP, Chernyak L, Steiner T, Kao CJ, et al. Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7296-7300. DOI: 10.1143/Jjap.44.7296 |
0.418 |
|
| 2005 |
Lopatiuk O, Chernyak L, Osinsky A, Xie JQ. Lithium-related states as deep electron traps in ZnO Applied Physics Letters. 87: 214110. DOI: 10.1063/1.2136348 |
0.593 |
|
| 2005 |
Lopatiuk O, Chernyak L, Osinsky A, Xie JQ, Chow PP. Electron-beam-induced current and cathodoluminescence studies of thermally activated increase for carrier diffusion length and lifetime in n-type ZnO Applied Physics Letters. 87: 162103. DOI: 10.1063/1.2106001 |
0.596 |
|
| 2005 |
Polyakov AY, Li Q, Huh SW, Skowronski M, Lopatiuk O, Chernyak L, Sanchez E. Minority carrier diffusion length measurements in 6H-SiC Journal of Applied Physics. 97: 53703. DOI: 10.1063/1.1853501 |
0.553 |
|
| 2005 |
Lopatiuk O, Burdett W, Chernyak L, Ip KP, Heo YW, Norton DP, Pearton SJ, Hertog B, Chow PP, Osinsky A. Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus Applied Physics Letters. 86: 012105. DOI: 10.1063/1.1844037 |
0.79 |
|
| 2005 |
Lopatiuk O, Osinsky A, Dabiran A, Gartsman K, Feldman I, Chernyak L. Electron trapping effects in C- and Fe-doped GaN and AlGaN Solid-State Electronics. 49: 1662-1668. DOI: 10.1016/J.Sse.2005.08.002 |
0.578 |
|
| 2005 |
Chou MMC, Chernyak L. Grain boundary effect on electron-beam-induced current in La3Ga5.5Ta0.5O14 crystal Materials Research Bulletin. 40: 1883-1890. DOI: 10.1016/J.Materresbull.2005.06.012 |
0.411 |
|
| 2004 |
Burdett W, Lopatiuk O, Chernyak L, Hermann M, Stutzmann M, Eickhoff M. Electron injection-induced effects in Mn-doped GaN Journal of Applied Physics. 96: 3556-3558. DOI: 10.1063/1.1780606 |
0.807 |
|
| 2003 |
Chernyak L, Burdett W, Klimov M, Osinsky A. Cathodoluminescence studies of the electron injection-induced effects in GaN Applied Physics Letters. 82: 3680-3682. DOI: 10.1063/1.1578514 |
0.811 |
|
| 2003 |
Burdett W, Osinsky A, Kotlyarov V, Chow P, Dabiran A, Chernyak L. Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN Solid-State Electronics. 47: 931-935. DOI: 10.1016/S0038-1101(02)00449-5 |
0.787 |
|
| 2003 |
Burdett W, Lopatiuk O, Osinsky A, Pearton S, Chernyak L. The optical signature of electron injection in p-(Al)GaN Superlattices and Microstructures. 34: 55-62. DOI: 10.1016/J.Spmi.2004.02.019 |
0.79 |
|
| 2002 |
Chernyak L, Burdett W, Osinsky A. Study of temperature dependence for the electron injection-induced effects in GaN Applied Physics Letters. 81: 1633-1635. DOI: 10.1063/1.1503407 |
0.805 |
|
| 2002 |
Nootz G, Schulte A, Chernyak L, Osinsky A, Jasinski J, Benamara M, Liliental-Weber Z. Correlations between spatially resolved Raman shifts and dislocation density in GaN films Applied Physics Letters. 80: 1355-1357. DOI: 10.1063/1.1449523 |
0.3 |
|
| 2002 |
Chernyak L, Schulte A, Osinsky A, Graff J, Schubert EF. Influence of electron injection on performance of GaN photodetectors Applied Physics Letters. 80: 926-928. DOI: 10.1063/1.1448382 |
0.541 |
|
| 2001 |
Chernyak L, Osinsky A, Fuflyigin VN, Graff JW, Schubert EF. Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices Ieee Transactions On Electron Devices. 48: 433-437. DOI: 10.1109/16.906432 |
0.558 |
|
| 2001 |
Chernyak L, Klimov M. Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration Applied Physics Letters. 78: 1613-1615. DOI: 10.1063/1.1355009 |
0.384 |
|
| 2001 |
Chernyak L, Osinsky A, Pearton S, Ren F. Phototransistor measurements in AlGaN/GaN HBTs Electronics Letters. 37: 1411. DOI: 10.1049/El:20010948 |
0.418 |
|
| 2001 |
Chernyak L, Nootz G, Osinsky A. Enhancement of minority carrier transport in forward biased GaN p-n junction Electronics Letters. 37: 922-923. DOI: 10.1049/El:20010605 |
0.502 |
|
| 2001 |
Chernyak L, Ghabboun J, Lyahovitskaya V, Cahen D. Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 μm IR electroluminescence Materials Science and Engineering: B. 81: 113-115. DOI: 10.1016/S0921-5107(00)00678-4 |
0.354 |
|
| 2001 |
Chernyak L, Osinsky A, Schulte A. Minority Carrier Transport in ZnO and Related Materials Solid-State Electronics. 45: 1687-1702. DOI: 10.1016/S0038-1101(01)00161-7 |
0.388 |
|
| 2000 |
Chernyak L, Osinsky A, Nootz G, Schulte A, Jasinski J, Benamara M, Liliental-Weber Z, Look DC, Molnar RJ. Electron beam and optical depth profiling of quasibulk GaN Applied Physics Letters. 77: 2695-2697. DOI: 10.1063/1.1319530 |
0.558 |
|
| 2000 |
Lyahovitskaya V, Chernyak L, Greenberg J, Kaplan L, Cahen D. Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry Journal of Applied Physics. 88: 3976. DOI: 10.1063/1.1308065 |
0.438 |
|
| 2000 |
Chernyak L, Osinsky A, Fuflyigin V, Schubert EF. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices Applied Physics Letters. 77: 875-877. DOI: 10.1063/1.1306910 |
0.622 |
|
| 2000 |
Lyahovitskaya V, Chernyak L, Greenberg J, Kaplan L, Cahen D. n- And p-type post-growth self-doping of CdTe single crystals Journal of Crystal Growth. 214: 1155-1157. DOI: 10.1016/S0022-0248(00)00294-3 |
0.433 |
|
| 1997 |
Gartsman K, Chernyak L, Lyahovitskaya V, Cahen D, Didik V, Kozlovsky V, Malkovich R, Skoryatina E, Usacheva V. Direct evidence for diffusion and electromigration of Cu in CuInSe2 Journal of Applied Physics. 82: 4282-4285. DOI: 10.1063/1.366252 |
0.316 |
|
| 1997 |
Chernyak L, Osinsky A, Temkin H, Mintairov A, Malkina IG, Zvonkov BN, Saf’anov YN. Transport anisotropy in spontaneously ordered GaInP2 alloys Applied Physics Letters. 70: 2425-2427. DOI: 10.1063/1.118864 |
0.344 |
|
| 1997 |
Cahen D, Chernyak L. Dopant Electromigration in Semiconductors Advanced Materials. 9: 861-876. DOI: 10.1002/Adma.19970091104 |
0.395 |
|
| 1996 |
Chernyak L, Lyakhovitskaya V, Richter S, Jakubowicz A, Manassen Y, Cohen SR, Cahen D. Electronic effects of ion mobility in semiconductors: Mixed electronic–ionic behavior and device creation in Si:Li Journal of Applied Physics. 80: 2749-2762. DOI: 10.1063/1.363132 |
0.427 |
|
| 1996 |
McAlpine NS, McConville P, Haneman D, Chernyak L, Cahen D. Junction sharpness in field‐induced transistor structures in CuxAg1−xInSe2 Journal of Applied Physics. 79: 7370-7372. DOI: 10.1063/1.361453 |
0.399 |
|
| 1996 |
Chernyak L, Osinsky A, Temkin H, Yang JW, Chen Q, Khan MA. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride Applied Physics Letters. 69: 2531-2533. DOI: 10.1063/1.117729 |
0.55 |
|
| 1996 |
Osinsky A, Chernyak L, Temkin H, Wen Y, Parkinson BA. Effect of sulfur doping on optical anisotropy of CdSiAs2 Applied Physics Letters. 69: 2867-2869. DOI: 10.1063/1.117345 |
0.393 |
|
| 1996 |
Yang JW, Sun CJ, Chen Q, Anwar MZ, Khan MA, Nikishin SA, Seryogin GA, Osinsky AV, Chernyak L, Temkin H, Hu C, Mahajan S. High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters. 69: 3566-3568. DOI: 10.1063/1.117247 |
0.397 |
|
| 1996 |
Chernyak L. Voltage-driven doping of mixed ionic electronic semiconductors Solid State Ionics. 83: 29-33. DOI: 10.1016/0167-2738(96)89547-6 |
0.407 |
|
| 1995 |
Chernyak L, Lyakhovitskaya V, Cahen D. Low temperature device creation in Si via fast Li electromigration Applied Physics Letters. 66: 709-711. DOI: 10.1063/1.114107 |
0.487 |
|
| 1995 |
Chernyak L, Gartsman K, Cahen D, Stafsudd OM. Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2 Journal of Physics and Chemistry of Solids. 56: 1165-1191. DOI: 10.1016/0022-3697(95)00050-X |
0.481 |
|
| 1995 |
Chernyak L, Jakubowicz A, Cahen D. Junction electroluminescence from microscopic diode structures in CuInSe2, prepared by electric field-assisted doping Advanced Materials. 7: 45-48. DOI: 10.1002/Adma.19950070109 |
0.336 |
|
| 1994 |
Cahen D, Chernyak L, Gartsman K, Lyubomirsky I, Scolnik Y, Stafsudd O, Triboulet R. Room Temperature Tailoring of Electrical Properties of Semi- and Superconductors via Controlled Ion Migration Materials Science Forum. 187-192. DOI: 10.4028/Www.Scientific.Net/Msf.152-153.187 |
0.326 |
|
| 1994 |
Chernyak L, Cahen D, Zhao S, Haneman D. Local temperature increases during electric‐field‐induced transistor formation in CuInSe2 Applied Physics Letters. 65: 427-429. DOI: 10.1063/1.112322 |
0.383 |
|
| 1993 |
Cahen D, Chernyak L, Gartsman K, Lyubomirsky I, Triboulet R. Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors Japanese Journal of Applied Physics. 32: 660. DOI: 10.7567/Jjaps.32S3.660 |
0.429 |
|
| 1992 |
Gartsman K, Chernyak L, Marc Gilet J, Triboulet R, Cahen D. Room Temperature Local Tailoring of Electronic Properties of Hg1-xCdxTe by Application of an External Electric Field Mrs Proceedings. 262. DOI: 10.1557/Proc-262-809 |
0.475 |
|
| 1992 |
Gartsman K, Chernyak L, Gilet JM, Cahen D, Triboulet R. Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field Applied Physics Letters. 61: 2428-2430. DOI: 10.1063/1.108459 |
0.453 |
|
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