Alexander Mintairov - Publications

Affiliations: 
University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering, Optics Physics, Condensed Matter Physics, Materials Science Engineering

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Mintairov AM, Lebedev DV, Vlasov AS, Blundell SA. Majorana Anyon Composites in Magneto-Photoluminescence Spectra of Natural Quantum Hall Puddles. Nanomaterials (Basel, Switzerland). 12. PMID 35335829 DOI: 10.3390/nano12061016  0.347
2021 Mintairov A, Lebedev D, Vlasov A, Bogdanov A, Ramezanpour S, Blundell S. Fractional Charge States in the Magneto-Photoluminescence Spectra of Single-Electron InP/GaInP Quantum Dots. Nanomaterials (Basel, Switzerland). 11. PMID 33669253 DOI: 10.3390/nano11020493  0.301
2018 Kazanov DR, Poshakinskiy AV, Davydov VY, Smirnov AN, Eliseyev IA, Kirilenko DA, Remškar M, Fathipour S, Mintairov A, Seabaugh A, Gil B, Shubina TV. Multiwall MoS2 tubes as optical resonators Applied Physics Letters. 113: 101106. DOI: 10.1063/1.5047792  0.355
2015 Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900  0.433
2014 Kryzhanovskaya NV, Mukhin IS, Moiseev EI, Shostak II, Bogdanov AA, Nadtochiy AM, Maximov MV, Zhukov AE, Kulagina MM, Vashanova KA, Zadiranov YM, Troshkov SI, Lipovskii AA, Mintairov A. Control of emission spectra in quantum dot microdisk/microring lasers. Optics Express. 22: 25782-7. PMID 25401612 DOI: 10.1364/Oe.22.025782  0.376
2014 Berger C, Huttner U, Mootz M, Kira M, Koch SW, Tempel JS, Aßmann M, Bayer M, Mintairov AM, Merz JL. Quantum-memory effects in the emission of quantum-dot microcavities. Physical Review Letters. 113: 093902. PMID 25215985 DOI: 10.1103/Physrevlett.113.093902  0.618
2014 Qi M, Stephenson CA, Protasenko V, O'Brien WA, Mintairov A, Xing H, Wistey MA. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104. DOI: 10.1063/1.4866278  0.455
2013 Kryzhanovskaya NV, Zhukov AE, Nadtochy AM, Maximov MV, Moiseev EI, Kulagina MM, Savelev AV, Arakcheeva EM, Lipovskii AA, Zubov FI, Kapsalis A, Mesaritakis C, Syvridis D, Mintairov A, Livshits D. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region Semiconductors. 47: 1387-1390. DOI: 10.1134/S1063782613100187  0.428
2006 Wang K, Cao Y, Simon J, Zhang J, Mintairov A, Merz J, Hall D, Kosel T, Jena D. Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2364456  0.6
2005 Mintairov A, Merz J, Sizov D, Sizov V, Lundin V, Usov S, Zavarin E, Tsatsul'nikov A, Musikhin Y, Vlasov A, Ledentsov N. Near-field photoluminescence spectroscopy of InGaN quantum dots Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff32-06  0.641
2005 Mintairov A, Tang Y, Merz J, Tokranov V, Oktyabrsky S. Single dot near-field spectroscopy for photonic crystal microcavities Physica Status Solidi C: Conferences. 2: 845-849. DOI: 10.1002/Pssc.200460326  0.653
2004 Mintairov A, Kosel T, Sun K, Ustinov V, Merz J. Near-Field Scanning Optical Microscopy of Phase Separation Effects in Dilute Nitride Alloys. Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O3.1  0.662
2004 Prutskij T, Díaz-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J. Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy Journal of Physics D. 37: 1563-1568. DOI: 10.1088/0022-3727/37/11/010  0.668
2004 Prutskij T, Dı́az-Arencibia P, Silva-Andrade F, Mintairov A, Kosel T, Merz J. Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique Journal of Non-Crystalline Solids. 338: 269-272. DOI: 10.1016/J.Jnoncrysol.2004.02.084  0.679
2004 Prutskij T, Dı́az-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J. Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy Applied Surface Science. 234: 462-467. DOI: 10.1016/J.Apsusc.2004.05.071  0.66
2003 Gadzhiev GM, Golubev VG, Zamoryanskaya MV, Kurdyukov DA, Medvedev AV, Merz J, Mintairov A, Pevtsov AB, Sel’kin AV, Travnikov VV, Sharenkova NV. Fabrication and optical properties of photonic crystals based on opal-GaP and opal-GaPN composites Semiconductors. 37: 1400-1405. DOI: 10.1134/1.1634661  0.619
2003 Prutskij TA, Dı́az-Arencibia P, Mintairov A, Merz J, Kosel T. Some evidences of ordering in InGaP layers grown by liquid phase epitaxy Applied Surface Science. 230-234. DOI: 10.1016/S0169-4332(03)00408-2  0.666
2001 Mintairov AM, Kosel TH, Merz JL, Blagnov PA, Vlasov AS, Ustinov VM, Cook RE. Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN. Physical Review Letters. 87: 277401. PMID 11800913 DOI: 10.1103/PhysRevLett.87.277401  0.638
2001 Prutskij TA, Arencibia PD, Mintairov A, Merz J, Kosel TH. ORDERED VERSUS DISORDERED InGaP LAYERS GROWN BY LIQUID PHASE EPITAXY Modern Physics Letters B. 15: 651-654. DOI: 10.1142/S021798490100221X  0.65
2001 Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476. DOI: 10.1007/S11664-001-0085-0  0.646
2000 Mintairov A, Merz J, Osinsky A, Fuflyigin V, Zhu LD. Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire Applied Physics Letters. 76: 2517-2519. DOI: 10.1063/1.126394  0.619
1997 Chernyak L, Osinsky A, Temkin H, Mintairov A, Malkina IG, Zvonkov BN, Saf’anov YN. Transport anisotropy in spontaneously ordered GaInP2 alloys Applied Physics Letters. 70: 2425-2427. DOI: 10.1063/1.118864  0.31
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