Sayeef Salahuddin

Affiliations: 
Electrical Engineering and Computer Science University of California, Berkeley, Berkeley, CA, United States 
Area:
Negative Capacitance
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"Sayeef Salahuddin"
Bio:

https://www.proquest.com/openview/52a03ec49b56eb3193fcfd99c95538fe/1

Parents

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Supriyo Datta grad student 2003-2008 Purdue (Physics Tree)
 (Novel electronic and spintronic devices for low power logic computation)

Children

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Md. K. Ashraf grad student 2013 UC Berkeley
Kartik Ganapathi grad student 2013 UC Berkeley
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Publications

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Cheema SS, Shanker N, Wang LC, et al. (2022) Ultrathin ferroic HfO-ZrO superlattice gate stack for advanced transistors. Nature. 604: 65-71
Huang X, Sayed S, Mittelstaedt J, et al. (2021) Novel Spin-Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La Sr MnO /SrIrO System. Advanced Materials (Deerfield Beach, Fla.). e2008269
Roschewsky N, Walker ES, Gowtham P, et al. (2019) Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures Physical Review B. 99
Li X, Song M, Xu N, et al. (2018) Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions Ieee Transactions On Electron Devices. 65: 4687-4693
Yang Y, Wilson RB, Gorchon J, et al. (2017) Ultrafast magnetization reversal by picosecond electrical pulses. Science Advances. 3: e1603117
Mcguire FA, Lin YC, Price KM, et al. (2017) Sustained sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors. Nano Letters
Bakaul SR, Serrao CR, Lee O, et al. (2017) High Speed Epitaxial Perovskite Memory on Flexible Substrates. Advanced Materials (Deerfield Beach, Fla.)
Lin Y, Kushwaha P, Agarwal H, et al. (2017) Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs Ieee Transactions On Electron Devices. 64: 3986-3990
Camsari KY, Salahuddin S, Datta S. (2017) Implementing p-bits With Embedded MTJ Ieee Electron Device Letters. 38: 1767-1770
Roschewsky N, Lambert C, Salahuddin S. (2017) Spin-orbit torque switching of ultralarge-thickness ferrimagnetic GdFeCo Physical Review B. 96
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