| Year |
Citation |
Score |
| 2008 |
Chléirigh CN, Wang X, Rimple G, Wang Y, Theodore ND, Canonico M, Hoyt JL. Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing Journal of Applied Physics. 103: 104501. DOI: 10.1063/1.2903849 |
0.498 |
|
| 2008 |
Roucka R, D'Costa VR, An YJ, Canonico M, Kouvetakis J, Menéndez J, Chizmeshya AVG. Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442. DOI: 10.1021/Cm702547P |
0.572 |
|
| 2008 |
Gomez L, Canonico M, Kim M, Hashemi P, Hoyt JL. Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator Journal of Electronic Materials. 37: 240-244. DOI: 10.1007/S11664-007-0337-8 |
0.513 |
|
| 2007 |
Park K, Canonico M, Celler GK, Seacrist M, Chan J, Gelpey J, Holbert KE, Nakagawa S, Tajima M, Schroder DK. Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator Journal of Applied Physics. 102. DOI: 10.1063/1.2787167 |
0.455 |
|
| 2007 |
Hashemi P, Gomez L, Hoyt JL, Robertson MD, Canonico M. Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained- Si heterostructures on insulator Applied Physics Letters. 91. DOI: 10.1063/1.2772775 |
0.458 |
|
| 2007 |
Xia G(, Hoyt JL, Canonico M. Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 101: 44901. DOI: 10.1063/1.2430904 |
0.463 |
|
| 2006 |
D'Costa VR, Cook CS, Birdwell AG, Littler CL, Canonico M, Zollner S, Kouvetakis J, Menéndez J. Optical critical points of thin-film Ge1-y Sny alloys: A comparative Ge1-y Sny Ge1-x six study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125207 |
0.542 |
|
| 2006 |
Xia G, Olubuyide OO, Hoyt JL, Canonico M. Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates Applied Physics Letters. 88: 13507. DOI: 10.1063/1.2158706 |
0.46 |
|
| 2004 |
Cook CS, Daly T, Liu R, Canonico M, Xie Q, Gregory RB, Zollner S. Spectroscopic ellipsometry for in-line monitoring of silicon nitrides Thin Solid Films. 455: 794-797. DOI: 10.1016/J.Tsf.2003.11.265 |
0.331 |
|
| 2004 |
Liu R, Canonico M. Applications of UV-Raman spectroscopy and high-resolution X-ray diffraction to microelectronic materials and devices Microelectronic Engineering. 75: 243-251. DOI: 10.1016/J.Mee.2004.06.004 |
0.421 |
|
| 2003 |
Xie Q, Liu R, Wang X, Canonico M, Duda E, Lu S, Cook C, Volinsky AA, Zollner S, Thomas SG, White T, Barr A, Sadaka M, Nguyen B. Characterization Techniques for Evaluating Strained Si CMOS Materials Characterization and Metrology For Ulsi Technology. 683: 223-227. DOI: 10.1063/1.1622475 |
0.447 |
|
| 2002 |
Canonico M, Adams GB, Poweleit C, Menendez J, Page JB, Harris G, Meulen HPVD, Calleja JM, Rubio J. Characterization of carbon nanotubes using Raman excitation profiles Physical Review B. 65: 201402. DOI: 10.1103/Physrevb.65.201402 |
0.407 |
|
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