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Andrew Chizmeshya - Publications

Affiliations: 
Chemistry Arizona State University, Tempe, AZ, United States 
Area:
Biochemistry, Physical Chemistry, General Biophysics
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77 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Nisr C, Chen H, Leinenweber K, Chizmeshya A, Prakapenka VB, Prescher C, Tkachev SN, Meng Y, Liu Z, Shim SH. Large HO solubility in dense silica and its implications for the interiors of water-rich planets. Proceedings of the National Academy of Sciences of the United States of America. PMID 32312811 DOI: 10.1073/Pnas.1917448117  0.321
2018 Subramanian G, Zhang X, Kodis G, Kong Q, Liu C, Chizmeshya AVG, Weierstall U, Spence JCH. Direct Structural and Chemical Characterization of the Photolytic Intermediates of Methylcobalamin Using Time-Resolved X-ray Absorption Spectroscopy. The Journal of Physical Chemistry Letters. PMID 29510052 DOI: 10.1021/Acs.Jpclett.8B00083  0.305
2014 Kouvetakis J, Favaro R, Grzybowski GJ, Senaratne C, Menéndez J, Chizmeshya AVG. Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH3)2 (M = Si,Ge) delivery sources: An experimental and theoretical inquiry Chemistry of Materials. 26: 4447-4458. DOI: 10.1021/Cm501434Z  0.445
2014 Jiang L, Aoki T, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Nanostructure-property control in AlPSi3/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level Chemistry of Materials. 26: 4092-4101. DOI: 10.1021/Cm500926Q  0.34
2014 Aoki T, Jiang L, Chizmeshya AVG, Menéndez J, Kouvetakis J, Smith DJ. Atomic scale studies of structure and bonding in A1PSi<inf>3</inf> alloys grown lattice-matched on Si(001) Microscopy and Microanalysis. 20: 524-525. DOI: 10.1017/S1431927614004346  0.375
2013 Sims PE, Chizmeshya AV, Jiang L, Beeler RT, Poweleit CD, Gallagher J, Smith DJ, Menéndez J, Kouvetakis J. Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties. Journal of the American Chemical Society. 135: 12388-99. PMID 23899409 DOI: 10.1021/Ja405726B  0.34
2013 Jiang L, Sims PE, Grzybowski G, Beeler RT, Chizmeshya AVG, Smith DJ, Kouvetakis J, Menéndez J. Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045208  0.437
2013 Xu C, Beeler RT, Jiang L, Grzybowski G, Chizmeshya AVG, Menéndez J, Kouvetakis J. New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105001  0.325
2013 Grzybowski G, Chizmeshya AVG, Senaratne C, Menendez J, Kouvetakis J. Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication Journal of Materials Chemistry C. 1: 5223-5234. DOI: 10.1039/C3Tc30865K  0.409
2012 Xu C, Beeler RT, Grzybowski GJ, Chizmeshya AV, Smith DJ, Menéndez J, Kouvetakis J. Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn. Journal of the American Chemical Society. 134: 20756-67. PMID 23237361 DOI: 10.1021/Ja309894C  0.348
2012 Grzybowski G, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties Ecs Transactions. 50: 865-874. DOI: 10.1149/05009.0865ecst  0.35
2012 Watkins T, Jiang L, Xu C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. (Si) 5-2y(AlP) y alloys assembled on Si(100) from Al-P-Si 3 building units Applied Physics Letters. 100. DOI: 10.1063/1.3675444  0.427
2012 Kouvetakis J, Chizmeshya AVG, Jiang L, Watkins T, Grzybowski G, Beeler RT, Poweleit C, Menéndez J. Monocrystalline Al(As1-xNx)Si3 and Al(P1-xNx)ySi5-2 y alloys with diamond-like structures: New chemical approaches to semiconductors lattice matched to Si Chemistry of Materials. 24: 3219-3230. DOI: 10.1021/Cm301616S  0.348
2012 Grzybowski G, Watkins T, Beeler RT, Jiang L, Smith DJ, Chizmeshya AVG, Kouvetakis J, Menéndez J. Synthesis and properties of monocrystalline Al(As 1-xP x)Si 3 alloys on Si(100) Chemistry of Materials. 24: 2347-2355. DOI: 10.1021/Cm300761R  0.447
2012 Grzybowski G, Jiang L, Beeler RT, Watkins T, Chizmeshya AVG, Xu C, Menéndez J, Kouvetakis J. Ultra-low-temperature epitaxy of ge-based semiconductors and optoelectronic structures on Si(100): Introducing higher order germanes (Ge 3H 8, Ge 4H 10) Chemistry of Materials. 24: 1619-1628. DOI: 10.1021/Cm3002404  0.332
2011 Watkins T, Chizmeshya AV, Jiang L, Smith DJ, Beeler RT, Grzybowski G, Poweleit CD, Menéndez J, Kouvetakis J. Nanosynthesis routes to new tetrahedral crystalline solids: silicon-like Si3AlP. Journal of the American Chemical Society. 133: 16212-8. PMID 21877711 DOI: 10.1021/Ja206738V  0.368
2011 Weng C, Kouvetakis J, Chizmeshya AV. A novel predictive model for formation enthalpies of Si and Ge hydrides with propane- and butane-like structures. Journal of Computational Chemistry. 32: 835-53. PMID 20949518 DOI: 10.1002/Jcc.21662  0.433
2011 Beeler R, Roucka R, Chizmeshya AVG, Kouvetakis J, Menéndez J. Nonlinear structure-composition relationships in the Ge 1-ySny/Si(100) (y<0.15) system Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035204  0.397
2011 Watkins T, Jiang L, Smith DJ, Chizmeshya AVG, Menendez J, Kouvetakis J. Designer hydride routes to 'Si-Ge'/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/12/125005  0.447
2011 Beeler RT, Grzybowski GJ, Roucka R, Jiang L, Mathews J, Smith DJ, Menéndez J, Chizmeshya AVG, Kouvetakis J. Synthesis and materials properties of sn/p-doped ge on si(100): Photoluminescence and prototype devices Chemistry of Materials. 23: 4480-4486. DOI: 10.1021/Cm201648X  0.348
2010 Roucka R, Fang YY, Kouvetakis J, Chizmeshya AVG, Menéndez J. Thermal expansivity of Ge1-y sny alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245214  0.355
2010 Weng C, Kouvetakis J, Chizmeshya AVG. Si-Ge-based oxynitrides: From molecules to solids Chemistry of Materials. 22: 3884-3899. DOI: 10.1021/Cm903772N  0.349
2010 Tice JB, D'Costa VR, Grzybowski G, Chizmeshya AVG, Tolle J, Menendez J, Kouvetakis J. Synthesis and optical properties of amorphous Si3N 4- xPx dielectrics and complementary insights from ab initio structural simulations Chemistry of Materials. 22: 5296-5305. DOI: 10.1021/Cm101448A  0.414
2010 Xie J, Chizmeshya AVG, Tolle J, Dcosta VR, Menendez J, Kouvetakis J. Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms Chemistry of Materials. 22: 3779-3789. DOI: 10.1021/Cm100915Q  0.348
2010 Beeler R, Mathews J, Weng C, Tolle J, Roucka R, Chizmeshya AVG, Juday R, Bagchi S, Menndez J, Kouvetakis J. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(1 0 0) substrates for low-cost photovoltaic applications Solar Energy Materials and Solar Cells. 94: 2362-2370. DOI: 10.1016/J.Solmat.2010.08.016  0.43
2009 Tice JB, Weng C, Tolle J, D'Costa VR, Singh R, Menendez J, Kouvetakis J, Chizmeshya AV. Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics. Dalton Transactions (Cambridge, England : 2003). 6773-82. PMID 19690688 DOI: 10.1039/B908280H  0.321
2009 Xie J, Tolle J, D'Costa VR, Chizmeshya AVG, Meńndez J, Kouvetakis J. Direct integration of active Ge1-x (Si4 Sn)x semiconductors on Si(100) Applied Physics Letters. 95. DOI: 10.1063/1.3242002  0.449
2009 Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menendez J. Practical B and P doping via Six Sny Ge1-x-y-z Mz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior Applied Physics Letters. 95. DOI: 10.1063/1.3204456  0.396
2009 Tolle J, Roucka R, Forrest B, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Poweleit CD, Groenert M, Sato T, Menéndez J. Integration of Zn-Cd-Te-Se Semiconductors on Si platforms via structurally designed cubic templates based on group IV elements Chemistry of Materials. 21: 3143-3152. DOI: 10.1021/Cm900437Y  0.324
2008 Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics. Journal of the American Chemical Society. 130: 16095-102. PMID 19032100 DOI: 10.1021/Ja806636C  0.337
2008 Kouvetakis J, An YJ, D'Costa VR, Tolle J, Chizmeshya AVG, Menéndez J, Roucka R. Synthesis of (Hf, Zr)B2-based heterostructures: Hybrid substrate systems for low temperature Al-Ga-N integration with Si Journal of Materials Chemistry. 18: 4775-4782. DOI: 10.1039/B807097K  0.355
2008 Tice JB, Fang YY, Tolle J, Chizmeshya A, Kouvetakis J. Synthesis and fundamental studies of chlorinated Si-Ge hydride macromolecules for strain engineering and selective-area epitaxial applications Chemistry of Materials. 20: 4374-4385. DOI: 10.1021/Cm800427P  0.414
2008 Roucka R, D'Costa VR, An YJ, Canonico M, Kouvetakis J, Menéndez J, Chizmeshya AVG. Thermoelastic and optical properties of thick boride templates on silicon for nitride integration applications Chemistry of Materials. 20: 1431-1442. DOI: 10.1021/Cm702547P  0.404
2008 Roucka R, An YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menéndez J, Kouvetakis J. Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Solid-State Electronics. 52: 1687-1690. DOI: 10.1016/J.Sse.2008.07.013  0.404
2008 Liu PL, Chizmeshya A, Kouvetakis J. Structural, electronic and energetic properties of GaN 0001 /Ga2O3 100 heterojunctions: A first-principles density functional theory study Physical Review B. 77: 35326. DOI: 10.1016/J.Scriptamat.2011.05.028  0.356
2008 Tice JB, Ritter CJ, Chizmeshya AVG, Forrest B, Torrison L, Groy TL, Kouvetakis J. Synthesis and properties of N3 and CN delivery compounds and related precursors for nitride and ceramic fabrication Applied Organometallic Chemistry. 22: 451-459. DOI: 10.1002/Aoc.1422  0.348
2007 Tice JB, Chizmeshya AV, Roucka R, Tolle J, Cherry BR, Kouvetakis J. ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: synthesis and fundamental studies. Journal of the American Chemical Society. 129: 7950-60. PMID 17547404 DOI: 10.1021/Ja0713680  0.321
2007 Fang YY, Tolle J, Roucka R, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Meńndez J. Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100) Applied Physics Letters. 90. DOI: 10.1063/1.2472273  0.343
2007 Wistey MA, Fang YY, Tolle J, Chizmeshya AVG, Kouvetakis J. Chemical routes to GeSi (100) structures for low temperature Si-based semiconductor applications Applied Physics Letters. 90. DOI: 10.1063/1.2437098  0.431
2007 Kouvetakis J, Chizmeshya AVG. New classes of Si-based photonic materials and device architectures via designer molecular routes Journal of Materials Chemistry. 17: 1649-1655. DOI: 10.1039/B618416B  0.314
2007 Fang YY, Tolle J, Tice J, Chizmeshya AVG, Kouvetakis J, D'Costa VR, Menéndez J. Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry Chemistry of Materials. 19: 5910-5925. DOI: 10.1021/Cm071581V  0.465
2007 Chizmeshya AVG, Ritter CJ, Groy TL, Tice JB, Kouvetakis J. Synthesis of molecular adducts of beryllium, boron, and gallium cyanides: Theoretical and experimental correlations between solid-state and molecular analogues Chemistry of Materials. 19: 5890-5901. DOI: 10.1021/Cm071275H  0.327
2006 Béarat H, McKelvy MJ, Chizmeshya AV, Gormley D, Nunez R, Carpenter RW, Squires K, Wolf GH. Carbon sequestration via aqueous olivine mineral carbonation: role of passivating layer formation. Environmental Science & Technology. 40: 4802-8. PMID 16913142 DOI: 10.1021/Es0523340  0.652
2006 Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J. Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors. Journal of the American Chemical Society. 128: 6919-30. PMID 16719472 DOI: 10.1021/Ja060428J  0.374
2006 Kouvetakis J, Menendez J, Chizmeshya AVG. Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon Annual Review of Materials Research. 36: 497-554. DOI: 10.1146/Annurev.Matsci.36.090804.095159  0.374
2006 Tolle J, Chizmeshya AVG, Fang YY, Kouvetakis J, D'Costa VR, Hu CW, Menéndez J, Tsong IST. Low temperature chemical vapor deposition of Si-based compounds via SiH 3SiH 2SiH 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures Applied Physics Letters. 89. DOI: 10.1063/1.2403903  0.454
2006 Roucka R, An Y, Chizmeshya AVG, Tolle J, Kouvetakis J, D'Costa VR, Menéndez J, Crozier P. Epitaxial semimetallic Hf xZr 1-xB 2 templates for optoelectronic integration on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2403189  0.324
2006 Chizmeshya AVG, Ritter C, Tolle J, Cook C, Menéndez J, Kouvetakis J. Fundamental Studies of P(GeH3)3, As(GeH 3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors Chemistry of Materials. 18: 6266-6277. DOI: 10.1021/Cm061696J  0.44
2006 Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy Materials Research Society Symposium Proceedings. 891: 579-584.  0.332
2005 Yamada-Takamura Y, Wang ZT, Fujikawa Y, Sakurai T, Xue QK, Tolle J, Liu PL, Chizmeshya AV, Kouvetakis J, Tsong IS. Surface and interface studies of GaN epitaxy on Si(111) via buffer layers. Physical Review Letters. 95: 266105. PMID 16486376 DOI: 10.1103/Physrevlett.95.266105  0.421
2005 Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J. Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si. Journal of the American Chemical Society. 127: 9855-64. PMID 15998091 DOI: 10.1021/Ja051411O  0.35
2005 Tolle J, Roucka R, D'Costa V, Menendez J, Chizmeshya A, Kouvetakis J. Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee12-08  0.433
2005 Liu PL, Chizmeshya AVG, Kouvetakis J, Tsong IST. First-principles studies of GaN(0001) heteroepitaxy on ZrB2(0001) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.245335  0.351
2005 Hu CW, Meńndez J, Tsong IST, Tolle J, Chizmeshya AVG, Ritter C, Kouvetakis J. Low-temperature pathways to Ge-rich Si 1-x Ge x alloys via single-source hydride chemistry Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117620  0.42
2005 Trivedi RA, Tolle J, Chizmeshya AVG, Roucka R, Ritter C, Kouvetakis J, Tsong IST. Low-temperature GaN growth on silicon substrates by single gas-source epitaxy and photo-excitation Applied Physics Letters. 87. DOI: 10.1063/1.2012519  0.386
2005 Roucka R, Tolle J, Cook C, Chizmeshya AVG, Kouvetakis J, D'Costa V, Menendez J, Chen ZD, Zollner S. Versatile buffer layer architectures based on Ge 1- x Sn x alloys Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922078  0.437
2005 Trivedi R, Liu PL, Roucka R, Tolle J, Chizmeshya AVG, Tsong IST, Kouvetakis J. Mismatched heteroepitaxy of tetrahedral semiconductors with Si via ZrB 2 templates Chemistry of Materials. 17: 4647-4652. DOI: 10.1021/Cm0510918  0.34
2005 Roucka R, Tolle J, Chizmeshya AVG, Tsong IST, Kouvetakis J. Epitaxial film growth of zirconium diboride on Si(0 0 1) Journal of Crystal Growth. 277: 364-371. DOI: 10.1016/J.Jcrysgro.2005.01.080  0.425
2005 Tolle J, Kouvetakis J, Kim DW, Mahajan S, Chizmeshya AVG, Hu CW, Bell A, Ponce FA, Tsong IST. Epitaxial growth of ZrB 2(0001) on Si(111) for III-nitride applications: A review Chinese Journal of Physics. 43: 233-248.  0.369
2004 Aella P, Cook C, Tolle J, Zollner S, Chizmeshya AVG, Kouvetakis J. Optical and structural properties of Si xSn yGe 1-x-y alloys Applied Physics Letters. 84: 888-890. DOI: 10.1063/1.1645324  0.419
2004 Hu CW, Chizmeshya AVG, Tolle J, Kouvetakis J, Tsong IST. Nucleation and growth of epitaxial ZrB2(0 0 0 1) on Si(1 1 1) Journal of Crystal Growth. 267: 554-563. DOI: 10.1016/J.Jcrysgro.2004.04.020  0.436
2003 Bauer MR, Cook CS, Aella P, Tolle J, Kouvetakis J, Crozier PA, Chizmeshya AVG, Smith DJ, Zollner S. SnGe superstructure materials for Si-based infrared optoelectronics Applied Physics Letters. 83: 3489-3491. DOI: 10.1063/1.1622435  0.426
2003 Tolle J, Roucka R, Tsong IST, Ritter C, Crozier PA, Chizmeshya AVG, Kouvetakis J. Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer Applied Physics Letters. 82: 2398-2400. DOI: 10.1063/1.1566099  0.311
2003 Chizmeshya AVG, Bauer MR, Kouvetakis J. Experimental and theoretical study of deviations from Vegard's law in the SnxGe1-x system Chemistry of Materials. 15: 2511-2519. DOI: 10.1021/Cm0300011  0.351
2003 Chizmeshya AVG, McKelvy MJ, Sharma R, Carpenter RW, Bearat H. Density functional theory study of the decomposition of Mg(OH)2: A lamellar dehydroxylation model Materials Chemistry and Physics. 77: 416-425. DOI: 10.1016/S0254-0584(02)00020-2  0.342
2003 Roucka R, Tolle J, Chizmeshya AVG, Crozier PA, Poweleit CD, Smith DJ, Kouvetakis J, Tsong IST. Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN Applied Surface Science. 212: 872-878. DOI: 10.1016/S0169-4332(03)00391-X  0.433
2003 Bauer MR, Tolle J, Bungay C, Chizmeshya AVG, Smith DJ, Menéndez J, Kouvetakis J. Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates Solid State Communications. 127: 355-359. DOI: 10.1016/S0038-1098(03)00446-0  0.308
2002 Roucka R, Tolle J, Chizmeshya AV, Crozier PA, Poweleit CD, Smith DJ, Tsong IS, Kouvetakis J. Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN. Physical Review Letters. 88: 206102. PMID 12005580 DOI: 10.1103/Physrevlett.88.206102  0.374
2002 Bauer MR, Tolle J, Chizmeshya AVG, Zollner S, Menendez J, Kouvetakis J. New Ge-Sn materials with adjustable bandgaps and lattice constants Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M2.5  0.415
2002 Bauer M, Taraci J, Tolle J, Chizmeshya AVG, Zollner S, Smith DJ, Menendez J, Hu C, Kouvetakis J. Ge-Sn semiconductors for band-gap and lattice engineering Applied Physics Letters. 81: 2992-2994. DOI: 10.1063/1.1515133  0.441
2002 Tolle J, Roucka R, Crozier PA, Chizmeshya AVG, Tsong IST, Kouvetakis J. Growth of SiCAlN on Si(111) via a crystalline oxide interface Applied Physics Letters. 81: 2181-2183. DOI: 10.1063/1.1507358  0.459
2002 Bauer MR, Tolle J, Chizmeshya AVG, Zollner S, Menendez J, Kouvetakis J. New Ge-Sn materials with adjustable bandgaps and lattice constants Materials Research Society Symposium - Proceedings. 744: 49-54.  0.317
2002 Tolle J, Roucka R, Chizmeshya AVG, Crozier PA, Smith DJ, Tsong IST, Kouvetakis J. Novel synthetic pathways to wide bandgap semiconductors in the Si-C-Al-N system Solid State Sciences. 4: 1509-1519.  0.359
1999 McMillan PF, Hubert H, Chizmeshya A, Petuskey WT, Garvie LAJ, Devouard B. Nucleation and Growth of Icosahedral Boron Suboxide Clusters at High Pressure Journal of Solid State Chemistry. 147: 281-290. DOI: 10.1006/Jssc.1999.8272  0.319
1998 Grzechnik A, Chizmeshya AVG, Wolf GH, McMillan PF. An experimental and theoretical investigation of phonons and lattice instabilities in metastable decompressed SrGeO3 perovskite Journal of Physics Condensed Matter. 10: 221-233. DOI: 10.1088/0953-8984/10/1/025  0.318
1997 McMillan PF, Hubert H, Chizmeshya A. Growth of Icosahedral Boron-Rich Clusters at High Pressure Mrs Proceedings. 499. DOI: 10.1557/Proc-499-453  0.315
1995 Hemmati M, Chizmeshya A, Wolf GH, Poole PH, Shao J, Angell CA. Crystalline-amorphous transition in silicate perovskites. Physical Review. B, Condensed Matter. 51: 14841-14848. PMID 9978434 DOI: 10.1103/Physrevb.51.14841  0.341
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