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Kevin J. Yang, Ph.D. - Publications

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA, United States 
Area:
Semiconductor Device Technologies
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Yang KJ, Takeuchi H, King T, Hu C. Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.P4-7  0.447
2002 Chang L, Yang KJ, Yeo YC, Polishchuk I, King TJ, Hu C. Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs Ieee Transactions On Electron Devices. 49: 2288-2294. DOI: 10.1109/Ted.2002.807446  0.601
2001 Lu Q, Yeo YC, Yang KJ, Lin R, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL, Guo X, Luo Z, Wang X, Tso-Ping M. Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326. DOI: 10.1109/55.930679  0.607
2001 Yeo YC, Lu Q, Ranade P, Takeuchi H, Yang KJ, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229. DOI: 10.1109/55.919237  0.609
1999 Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459. DOI: 10.1063/1.123060  0.546
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