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Craig G. Moe, Ph.D. - Publications

Affiliations: 
2007 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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38 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Moe CG, Sugiyama S, Kasai J, Grandusky JR, Schowalter LJ. AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230 nm Physica Status Solidi (a). 215: 1700660. DOI: 10.1002/Pssa.201700660  0.523
2014 Moe CG, Grandusky JR, Chen J, Kitamura K, Mendrick MC, Jamil M, Toita M, Gibb SR, Schowalter LJ. High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037856  0.556
2014 Moe CG, Garrett GA, Grandusky JR, Chen J, Rodak LE, Rotella P, Wraback M, Schowalter LJ. Correlation between optical and electrical performance of mid-ultraviolet light-emitting diodes on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 786-789. DOI: 10.1002/Pssc.201300686  0.528
2013 Grandusky JR, Chen J, Gibb SR, Mendrick MC, Moe CG, Rodak L, Garrett GA, Wraback M, Schowalter LJ. 270nm pseudomorphic ultraviolet light-emitting diodes with over 60mW continuous wave output power Applied Physics Express. 6. DOI: 10.7567/Apex.6.032101  0.507
2013 Chen J, Grandusky JR, Moe CG, Mendrick MC, Jamil M, Gibb SR, Schowalter LJ. High power pseudomorphic mid ultraviolet light emitting diodes with improved efficiency and lifetime Optics Infobase Conference Papers.  0.38
2013 Moe CG, Chen JJ, Grandusky JR, Mendrick MC, Randive R, Rodak LE, Sampath AV, Wraback M, Schowalter LJ. Pseudomorphic mid-ultraviolet light-emitting diodes for water purification Cleo: Applications and Technology, Cleo_at 2013. JM3O.5.  0.306
2012 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G, Wraback M. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% Applied Physics Express. 5. DOI: 10.1143/Apex.5.082101  0.554
2012 Grandusky JR, Chen J, Mendrick MC, Gibb SR, Schowalter LJ, Moe C, Wraback M. Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410979  0.426
2012 Shatalov M, Sun W, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Shur M, Gaska R, Moe C, Garrett G, Wraback M. 278 nm deep ultraviolet LEDs with 11% external quantum efficiency Device Research Conference - Conference Digest, Drc. 255-256. DOI: 10.1109/DRC.2012.6257013  0.338
2012 Moe CG, Garrett GA, Rotella P, Shen H, Wraback M, Shatalov M, Sun W, Deng J, Hu X, Bilenko Y, Yang J, Gaska R. Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4772506  0.378
2012 Chen J, Grandusky JR, Mendrick MC, Gibb SR, Moe C, Wraback M, Kim YS, Lin SY, Schowalter LJ. 260 nm pseudomorphic ultraviolet light emitting diodes with enhanced photon extraction efficiency 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.371
2012 Chen J, Grandusky JR, Mendrick MC, Gibb SR, Moe C, Wraback M, Kim YS, Lin SY, Schowalter LJ. 260 nm pseudomorphic ultraviolet light emitting diodes with enhanced photon extraction efficiency 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.37
2011 Grandusky JR, Gibb SR, Mendrick MC, Moe C, Wraback M, Schowalter LJ. High output power from 260nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance Applied Physics Express. 4. DOI: 10.1143/Apex.4.082101  0.474
2011 Moe CG, Garrett GA, Shen H, Wraback M, Shatalov M, Hu X, Bilenko Y, Yang J, Sun W, Gaska R. Temperature dependent electroluminescence measurement of AlGaN-based ultraviolet light-emitting diodes 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135206  0.455
2011 Wright J, Moe C, Sampath AV, Garrett GA, Wraback M. Fabrication of periodically poled AlN with sub-micron periods Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2331-2333. DOI: 10.1002/Pssc.201001163  0.391
2010 Shatalov M, Sun W, Bilenko Y, Sattu A, Hu X, Deng J, Yang J, Shur M, Moe C, Wraback M, Gaska R. Large chip high power deep ultraviolet light-emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.062101  0.545
2010 Moe CG, Reed ML, Garrett GA, Sampath AV, Alexander T, Shen H, Wraback M, Bilenko Y, Shatalov M, Yang J, Sun W, Deng J, Gaska R. Current-induced degradation of high performance deep ultraviolet light emitting diodes Applied Physics Letters. 96. DOI: 10.1063/1.3435485  0.499
2010 Shatalov M, Sun W, Yang J, Hu X, Bilenko Y, Gaska R, Moe CG, Wraback M. High Power 245 nm deep UV LEDs Optics Infobase Conference Papers.  0.353
2009 Sampath AV, Reed ML, Moe C, Garrett GA, Readinger ED, Sarney WL, Shen H, Wraback M, Chua C, Johnson NM. The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities International Journal of High Speed Electronics and Systems. 19: 69-76. DOI: 10.1142/S0129156409006096  0.463
2009 Moe CG, Reed ML, Garrett GA, Metcalfe GD, Alexander T, Shen H, Wraback M, Lunev A, Bilenko Y, Hu X, Sattu A, Deng J, Shatalov M, Gaska R. Degradation mechanisms beyond device self-heating in deep ultraviolet light emitting diodes Ieee International Reliability Physics Symposium Proceedings. 94-97. DOI: 10.1109/IRPS.2009.5173230  0.386
2009 Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona TM, Kamber DS, Wu Y, Letts E, Newman SA, Nakamura S, Speck JS, Mishra UK, Denbaars SP, Onuma T, et al. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105. DOI: 10.1063/1.3079333  0.689
2009 Reed ML, Readinger ED, Moe CG, Shen H, Wraback M, Syrkin A, Usikov A, Kovalenkov OV, Dmitriev VA. Benefits of negative polarization charge in n-InGaN on p-GaN single heterostructure light emitting diode with p-side down Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 585-588. DOI: 10.1002/Pssc.200880401  0.467
2009 Garrett GA, Moe CG, Reed ML, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R. Time-resolved photoluminescence studies of AlGaN-based deep UV LED structures emitting down to 229 nm Optics Infobase Conference Papers.  0.43
2009 Garrett GA, Moe CG, Reed ML, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R. Time-resolved photoluminescence studies of AlGaN-based deep UV LED structures emitting down to 229 nm Optics Infobase Conference Papers.  0.43
2007 Slotte J, Tuomisto F, Saarinen K, Moe CG, Keller S, DenBaars SP. Influence of silicon doping on vacancies and optical properties of Al xGa1-xN thin films Applied Physics Letters. 90. DOI: 10.1063/1.2721132  0.439
2007 Chakraborty A, Moe CG, Wu Y, Mates T, Keller S, Speck JS, Denbaars SP, Mishra UK. Electrical and structural characterization of Mg-doped p -type Al0.69 Ga0.31 N films on SiC substrate Journal of Applied Physics. 101. DOI: 10.1063/1.2710303  0.426
2007 Moe C, Onuma T, Vampola K, Fellows N, Masui H, Newman S, Keller S, Chichibu SF, DenBaars SP, Emerson D. Increased power from deep ultraviolet LEDs via precursor selection Journal of Crystal Growth. 298: 710-713. DOI: 10.1016/J.Jcrysgro.2006.10.126  0.701
2007 Wu Y, Moe CG, Keller S, Denbaars SP, Speck JS. Vertical defects in heavily Mg-doped Al 0.69Ga 0.31N Physica Status Solidi (a) Applications and Materials Science. 204: 3423-3428. DOI: 10.1002/Pssa.200723195  0.365
2006 Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, DenBaars SP, Emerson D. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753. DOI: 10.1007/S11664-006-0133-X  0.7
2006 Moe CG, Wu Y, Piprek J, Keller S, Speck JS, DenBaars SP, Emerson D. AlGaN/AIN distributed bragg reflectors for deep ultraviolet wavelengths Physica Status Solidi (a) Applications and Materials Science. 203: 1915-1919. DOI: 10.1002/Pssa.200622076  0.628
2006 Moe CG, Wu Y, Keller S, Speck JS, DenBaars SP, Emerson D. Crystal quality and growth evolution of aluminum nitride on silicon carbide Physica Status Solidi (a) Applications and Materials Science. 203: 1708-1711. DOI: 10.1002/Pssa.200565388  0.467
2005 Moe CG, Masui H, Schmidt MC, Shen L, Moran B, Newman S, Vampola K, Mates T, Keller S, Speck JS, Denbaars SP, Hussel C, Emerson D. Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide Japanese Journal of Applied Physics, Part 2: Letters. 44: L502-L504. DOI: 10.1143/Jjap.44.L502  0.703
2005 Heikman S, Keller S, Newman S, Wu Y, Moe C, Moran B, Schmidt M, Mishra UK, Speck JS, Denbaars SP. Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407. DOI: 10.1143/Jjap.44.L405  0.73
2005 Keller S, Cantu P, Moe C, Yuan WU, Mishra UK, Speck JS, Denbaars SP. Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7227-7233. DOI: 10.1143/Jjap.44.7227  0.462
2004 Piprek J, Moe C, Keller S, Nakamura S, DenBaars SP. Internal efficiency analysis of 280 nm light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5594: 177-184. DOI: 10.1117/12.567084  0.631
2004 Katona TM, Margalith T, Moe C, Schmidt MC, Nakamura S, Speck JS, DenBaars SP. Growth and Fabrication of Short Wavelength UV LEDs Proceedings of Spie - the International Society For Optical Engineering. 5187: 250-259.  0.772
2003 Katona TM, Schmidt MC, Margalith T, Moe C, Tamura H, Sato H, Funaoka C, Underwood R, Nakamura S, Speck JS, DenBaars SP. 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction Physica Status Solidi C: Conferences. 2206-2209. DOI: 10.1002/Pssc.200303397  0.772
2003 DenBaars SP, Katona T, Cantu P, Hanlon A, Keller S, Schmidt M, Margalith T, Pattisson M, Moe C, Speck J, Nakamura S. GaN Based High Brightness LEDs and UV LEDs Technical Digest - International Electron Devices Meeting. 385-388.  0.755
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