Year |
Citation |
Score |
2020 |
Lin K, Li C, Engelmann S, Bruce RL, Joseph EA, Metzler D, Oehrlein GS. Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition Journal of Vacuum Science & Technology A. 38: 032601. DOI: 10.1116/1.5143247 |
0.341 |
|
2018 |
Lin K, Li C, Engelmann S, Bruce RL, Joseph EA, Metzler D, Oehrlein GS. Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors Journal of Vacuum Science & Technology A. 36: 040601. DOI: 10.1116/1.5035291 |
0.319 |
|
2018 |
Miyazoe H, Marchack N, Bruce RL, Zhu Y, Nakamura M, Miller E, Kanakasabapathy S, Suzuki T, Ito A, Matsumoto H, Engelmann SU, Joseph EA. Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 032201. DOI: 10.1116/1.5019016 |
0.443 |
|
2017 |
Metzler D, Li C, Engelmann S, Bruce RL, Joseph EA, Oehrlein GS. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma. The Journal of Chemical Physics. 146: 052801. PMID 28178847 DOI: 10.1063/1.4961458 |
0.453 |
|
2017 |
Engelmann SU, Bruce RL, Joseph EA, Fuller NCM, Graham WS, Sikorski EM, Kohjasteh M, Zhu Y, Nakamura M, Ito A, Matsumoto H, Matsuura G, Suzuki T. Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 051803. DOI: 10.1116/1.5003824 |
0.34 |
|
2017 |
Miyazoe H, Jagtiani AV, Tsai H, Engelmann SU, Joseph EA. Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas Journal of Physics D: Applied Physics. 50: 204001. DOI: 10.1088/1361-6463/Aa68C6 |
0.367 |
|
2017 |
Metzler D, Li C, Engelmann S, Bruce RL, Joseph EA, Oehrlein GS. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma Journal of Chemical Physics. 146. DOI: 10.1063/1.4961458 |
0.453 |
|
2017 |
Walton S, Boris D, Hernández S, Lock E, Petrova TB, Petrov G, Jagtiani A, Engelmann S, Miyazoe H, Joseph E. Electron beam generated plasmas: Characteristics and etching of silicon nitride Microelectronic Engineering. 168: 89-96. DOI: 10.1016/J.Mee.2016.11.003 |
0.384 |
|
2016 |
Jagtiani AV, Miyazoe H, Chang J, Farmer DB, Engel M, Neumayer D, Han SJ, Engelmann SU, Boris DR, Hernández SC, Lock EH, Walton SG, Joseph EA. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4936622 |
0.316 |
|
2016 |
Metzler D, Li C, Engelmann S, Bruce RL, Joseph EA, Oehrlein GS. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4935462 |
0.404 |
|
2008 |
Joseph EA, Zhou BS, Sant SP, Overzet LJ, Goeckner MJ. Role of chamber dimension in fluorocarbon based deposition and etching of Si O2 and its effects on gas and surface-phase chemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 545-554. DOI: 10.1116/1.2909963 |
0.732 |
|
2008 |
Goeckner MJ, Nelson CT, Sant SP, Jindal AK, Joseph EA, Zhou BS, Padron-Wells G, Jarvis B, Pierce R, Overzet LJ. Plasma-surface interactions Journal of Physics: Conference Series. 133. DOI: 10.1088/1742-6596/133/1/012010 |
0.711 |
|
2007 |
Joseph EA, Sant SP, Goeckner MJ, Overzet LJ, Peng HG, Gidley DW, Kastenmeier BEE. Effects of pore morphology on the diffusive properties of a porous low- κ dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1684-1693. DOI: 10.1116/1.2778694 |
0.681 |
|
2006 |
Zhou B, Joseph EA, Overzet LJ, Goeckner MJ. Spectroscopic study of gas and surface phase chemistries of CF 4 plasmas in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 114-125. DOI: 10.1116/1.2138718 |
0.688 |
|
2005 |
Zhou B, Joseph EA, Sant SP, Liu Y, Radhakrishnan A, Overzet LJ, Goeckner MJ. Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1657-1667. DOI: 10.1116/1.2049309 |
0.686 |
|
2004 |
Joseph EA, Zhou B, Sant SP, Overzet LJ, Goeckner MJ. Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 689-697. DOI: 10.1116/1.1722614 |
0.697 |
|
2004 |
Standaert TEFM, Hedlund C, Joseph EA, Oehrlein GS, Dalton TJ. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 53-60. DOI: 10.1116/1.1626642 |
0.307 |
|
2004 |
Goeckner MJ, Marquis JM, Markham BJ, Jindal AK, Joseph EA, Zhou BS. Modified gaseous electronics conference reference cell for the study of plasma-surface-gas interactions Review of Scientific Instruments. 75: 884-890. DOI: 10.1063/1.1688443 |
0.431 |
|
2003 |
Joseph EA, Goeckner MJ, Overzet LJ, Gidley DW, Kastenmeier BEE. Correlation of pore structure to integration issues for LOW-κ interconnects Advanced Metallization Conference (Amc). 537-541. |
0.63 |
|
2000 |
Standaert TEFM, Joseph EA, Oehrlein GS, Jain A, Gill WN, Wayner PC, Plawsky JL. Etching of xerogel in high-density fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 2742-2748. DOI: 10.1116/1.1290376 |
0.439 |
|
Show low-probability matches. |