| Year |
Citation |
Score |
| 2020 |
Byrne K, Shik A, Wisniewski D, Ruda HE. Rethinking the Characterization of Nanoscale Field-Effect Transistors: A Universal Approach. Small (Weinheim An Der Bergstrasse, Germany). e1907321. PMID 32378309 DOI: 10.1002/Smll.201907321 |
0.314 |
|
| 2020 |
Lynall D, Tseng AC, Nair SV, Savelyev IG, Blumin M, Wang S, Wang ZM, Ruda HE. Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime. Acs Nano. PMID 31904218 DOI: 10.1021/Acsnano.9B08253 |
0.309 |
|
| 2020 |
Chen A, Nair SV, Miljkovic B, Souza C, Ruda HE, Ji Z. Electronic structure of bulk and two-dimensional SrTiO 3 : DFT calculation with GGA + U methods Journal of Nanoparticle Research. 22: 1-8. DOI: 10.1007/S11051-020-04994-5 |
0.304 |
|
| 2019 |
Wisniewski D, Byrne K, Fernandes C, Stewart C, de Souza CF, Ruda HE. Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires. Nano Letters. PMID 30888829 DOI: 10.1021/Acs.Nanolett.8B04646 |
0.388 |
|
| 2019 |
Wisniewski D, Byrne K, de Souza CF, Fernandes C, Ruda HE. Enhancement of transport properties in single ZnSe nanowire field-effect transistors. Nanotechnology. 30: 054007. PMID 30517086 DOI: 10.1088/1361-6528/Aaf0D9 |
0.395 |
|
| 2018 |
Lynall D, Nair SV, Gutstein D, Shik A, Savelyev IG, Blumin M, Ruda HE. Surface State Dynamics Dictating Transport in InAs Nanowires. Nano Letters. PMID 29345949 DOI: 10.1021/Acs.Nanolett.7B05106 |
0.344 |
|
| 2018 |
Gutstein D, Lynall D, Nair SV, Savelyev I, Blumin M, Ercolani D, Ruda HE. Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires Nano Letters. 18: 124-129. PMID 29216432 DOI: 10.1021/Acs.Nanolett.7B03620 |
0.368 |
|
| 2017 |
Tseng AC, Lynall D, Savelyev I, Blumin M, Wang S, Ruda HE. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. Sensors (Basel, Switzerland). 17. PMID 28714903 DOI: 10.3390/S17071640 |
0.316 |
|
| 2017 |
Alagha S, Shik A, Ruda HE, Saveliev I, Kavanagh KL, Watkins SP. Space-charge-limited current in nanowires Journal of Applied Physics. 121: 174301. DOI: 10.1063/1.4982222 |
0.311 |
|
| 2016 |
Lynall D, Byrne K, Shik A, Nair SV, Ruda HE. Surface Properties from Transconductance in Nanoscale Systems. Nano Letters. PMID 27579852 DOI: 10.1021/Acs.Nanolett.6B01800 |
0.364 |
|
| 2015 |
Fernandes C, Shik A, Byrne K, Lynall D, Blumin M, Saveliev I, Ruda HE. Axial p-n-junctions in nanowires. Nanotechnology. 26: 085204. PMID 25656461 DOI: 10.1088/0957-4484/26/8/085204 |
0.312 |
|
| 2015 |
Mallampati B, Nair SV, Ruda HE, Philipose U. ZnO Nanowire Based Photoconductor with High Photoconductive Gain Mrs Proceedings. 1805. DOI: 10.1557/Opl.2015.720 |
0.385 |
|
| 2015 |
Mallampati B, Singh A, Shik A, Ruda HE, Philipose U. Electro-physical characterization of individual and arrays of ZnO nanowires Journal of Applied Physics. 118. DOI: 10.1063/1.4926793 |
0.353 |
|
| 2015 |
Mallampati B, Nair SV, Ruda HE, Philipose U. Role of surface in high photoconductive gain measured in ZnO nanowire-based photodetector Journal of Nanoparticle Research. 17. DOI: 10.1007/S11051-015-2973-X |
0.385 |
|
| 2014 |
Cisek R, Tokarz D, Hirmiz N, Saxena A, Shik A, Ruda HE, Barzda V. Crystal lattice determination of ZnSe nanowires with polarization-dependent second harmonic generation microscopy. Nanotechnology. 25: 505703. PMID 25431947 DOI: 10.1088/0957-4484/25/50/505703 |
0.67 |
|
| 2014 |
Dhayal SS, Ramaniah LM, Ruda HE, Nair SV. Electron states in semiconductor quantum dots. The Journal of Chemical Physics. 141: 204702. PMID 25429952 DOI: 10.1063/1.4901923 |
0.361 |
|
| 2014 |
Fernandes C, Ruda HE, Shik A. Hall effect in nanowires Journal of Applied Physics. 115. DOI: 10.1063/1.4884681 |
0.331 |
|
| 2013 |
Song Y, Wang Y, Li BB, Fernandes C, Ruda HE. Interface interaction induced ultra-dense nanoparticles assemblies. Nanoscale. 5: 6779-89. PMID 23793729 DOI: 10.1039/C3Nr01366A |
0.31 |
|
| 2013 |
Saxena A, Pan Q, Ruda HE. Radiative recombination mechanisms in individual wurtzite ZnSe nanowires with a defect-free single-crystalline microstructure. Nanoscale. 5: 2875-82. PMID 23446447 DOI: 10.1039/C3Nr34056B |
0.698 |
|
| 2013 |
Saxena A, Pan Q, Ruda HE. Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure. Nanotechnology. 24: 105701. PMID 23416878 DOI: 10.1088/0957-4484/24/10/105701 |
0.7 |
|
| 2013 |
Salfi J, Stewart C, Nair SV, Chen CY, Yongshun S, Rusli E, Lin FK, Yu M, Singh N, De Sousa CF, Ruda HE. Antenna-enhanced and polarization sensitive photoresponse in arrays of silicon P-i-N nanowires New Journal of Physics. 15. DOI: 10.1088/1367-2630/15/9/093029 |
0.704 |
|
| 2013 |
Shik A, Chen CY, Pitanti A, Tredicucci A, Ercolani D, Sorba L, Beltram F, Ruda HE. Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions Journal of Applied Physics. 113. DOI: 10.1063/1.4795123 |
0.344 |
|
| 2013 |
Song Y, Yin W, Fernandes C, Ruda HE. Fabrication of one-dimension ZnSe and ZnO nanostructures via anodic alumina template assisted vapor-liquid-solid growth process Thin Solid Films. 548: 130-137. DOI: 10.1016/J.Tsf.2013.09.029 |
0.326 |
|
| 2013 |
Zeng C, Zhang W, Li BB, Xu X, De Souza CF, Ruda HE. Controlled hydrothermal growth and optical characterization of wide band gap Be x Zn1-x O nanorod arrays Journal of Materials Science. 48: 3936-3942. DOI: 10.1007/S10853-013-7197-9 |
0.316 |
|
| 2012 |
Hayat A, Zareapour P, Zhao SYF, Jain A, Savelyev IG, Blumin M, Xu Z, Yang A, Gu GD, Ruda HE, Jia S, Cava RJ, Steinberg AM, Burch KS. Hybrid high-temperature-superconductor-semiconductor tunnel diode Physical Review X. 2. DOI: 10.1103/Physrevx.2.041019 |
0.352 |
|
| 2012 |
Salfi J, Nair SV, Savelyev IG, Blumin M, Ruda HE. Evidence for nonlinear screening and enhancement of scattering by a single Coulomb impurity for dielectrically confined electrons in InAs nanowires Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.235316 |
0.705 |
|
| 2012 |
Rao TVC, Nair SV, Ruda HE, Antoszewski J, Rodriguez JB, Plis E, Krishna S, Faraone L. Electrical transport in InAs/GaSb superlattice: Role of surface states and interface roughness Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105025 |
0.361 |
|
| 2012 |
Chen CY, Shik A, Pitanti A, Tredicucci A, Ercolani D, Sorba L, Beltram F, Ruda HE. Electron beam induced current in InSb-InAs nanowire type-III heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4745603 |
0.341 |
|
| 2012 |
Kavanagh KL, Saveliev I, Blumin M, Swadener G, Ruda HE. Faster radial strain relaxation in InAs-GaAs core-shell heterowires Journal of Applied Physics. 111. DOI: 10.1063/1.3684964 |
0.351 |
|
| 2012 |
Fernandes C, Ruda H, Saxena A, Souza Cd. Preparation of high quality ZnSe nanowires dominated by excitonic emission Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 2460-2464. DOI: 10.1002/Pssc.201200284 |
0.673 |
|
| 2011 |
Salfi J, Paradiso N, Roddaro S, Heun S, Nair SV, Savelyev IG, Blumin M, Beltram F, Ruda HE. Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals. Acs Nano. 5: 2191-9. PMID 21322642 DOI: 10.1021/Nn1033967 |
0.727 |
|
| 2011 |
Cisek R, Hirmiz N, Saxena A, Shik A, Ruda HE, Barzda V. Nonlinear Optical Properties of ZnSe Nanowires Investigated with SHG Polarization Microscopy Nonlinear Optics. DOI: 10.1364/Nlo.2011.Nthb5 |
0.669 |
|
| 2011 |
Li BB, Philipose U, De Souza CF, Ruda HE. Role of electro-deposition parameters on preparing tailored dimension vertically-aligned ZNO nanowires Journal of the Electrochemical Society. 158: D282-D285. DOI: 10.1149/1.3567524 |
0.351 |
|
| 2011 |
Xu T, Xu M, Zhu N, Kumari P, Wosinski L, Aitchison S, Ruda H. Silicon-on-insulator nanopillar-array optical sensor Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7908. DOI: 10.1117/12.874099 |
0.322 |
|
| 2011 |
Cisek R, Barzda V, Ruda HE, Shik A. Nonlinear optical properties of semiconductor nanowires Ieee Journal On Selected Topics in Quantum Electronics. 17: 915-921. DOI: 10.1109/Jstqe.2010.2065796 |
0.339 |
|
| 2011 |
Kavanagh KL, Salfi J, Savelyev I, Blumin M, Ruda HE. Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires Applied Physics Letters. 98. DOI: 10.1063/1.3579251 |
0.721 |
|
| 2011 |
Cisek R, Hirmiz N, Saxena A, Shik A, Ruda HE, Barzda V. Nonlinear optical properties of ZnSe nanowires investigated with SHG polarization microscopy Optics Infobase Conference Papers. |
0.629 |
|
| 2010 |
Salfi J, Savelyev IG, Blumin M, Nair SV, Ruda HE. Direct observation of single-charge-detection capability of nanowire field-effect transistors. Nature Nanotechnology. 5: 737-41. PMID 20852638 DOI: 10.1038/Nnano.2010.180 |
0.718 |
|
| 2010 |
Xu T, Zhu N, Xu MY, Wosinski L, Aitchison JS, Ruda HE. Pillar-array based optical sensor. Optics Express. 18: 5420-5. PMID 20389558 DOI: 10.1364/Oe.18.005420 |
0.327 |
|
| 2010 |
Ruda HE, Philipose U, Saxena A, De Souza C, Nair S, Salfi J, Shik A, Othonos A, Lioudakis E, Tsokkou D, Zhong L, Fernandes C. Optical response of II-VI ZnSe nanowires Ecs Transactions. 28: 193-202. DOI: 10.1149/1.3367226 |
0.609 |
|
| 2010 |
De Souza CF, Alizadeh A, Nair S, Saveliev I, Blumin M, Ruda HE, Hays DC, Watkins VH, Conway KR, Braunstein E. Mechanism of ir photoresponse in nanopatterned inas/gaas quantum dot p-i-n photodiodes Ieee Journal of Quantum Electronics. 46: 832-836. DOI: 10.1109/Jqe.2009.2035360 |
0.365 |
|
| 2010 |
Philipose U, Sapkota G, Salfi J, Ruda HE. Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/7/075004 |
0.717 |
|
| 2010 |
Salfi J, Roddaro S, Ercolani D, Sorba L, Savelyev I, Blumin M, Ruda HE, Beltram F. Electronic properties of quantum dot systems realized in semiconductor nanowires Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024007 |
0.73 |
|
| 2010 |
Li Z, Salfi J, De Souza C, Sun P, Nair SV, Ruda HE. Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition Applied Physics Letters. 97. DOI: 10.1063/1.3478555 |
0.722 |
|
| 2010 |
Wan H, Ruda HE. A study of the growth mechanism of CVD-grown ZnO nanowires Journal of Materials Science: Materials in Electronics. 21: 1014-1019. DOI: 10.1007/S10854-010-0118-7 |
0.326 |
|
| 2009 |
Spencer TL, Cisek R, Barzda V, Philipose U, Ruda HE, Shik A. Orientation dependent nonlinear optical effects in ZnSe nanowires Applied Physics Letters. 94. DOI: 10.1063/1.3155187 |
0.357 |
|
| 2009 |
Alizadeh A, Hays D, Keimel C, Watkins VH, Conway KR, Taylor ST, Neander R, Denault L, Desouza C, Saveliev I, Blumin M, Ruda HE, Braunstein E, Jones C. Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs Applied Physics Letters. 94. DOI: 10.1063/1.3111159 |
0.38 |
|
| 2009 |
Alizadeh A, Hays D, Taylor ST, Keimel C, Conway KR, Denault L, Krishnan K, Watkins VH, Neander R, Brown JS, Stintz A, Krishna S, Blumin M, Saveliev I, Ruda HE, et al. Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks Journal of Applied Physics. 105. DOI: 10.1063/1.3082494 |
0.39 |
|
| 2009 |
Othonos A, Lioudakis E, Tsokkou D, Philipose U, Ruda HE. Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states Journal of Alloys and Compounds. 483: 600-603. DOI: 10.1016/J.Jallcom.2008.07.197 |
0.367 |
|
| 2009 |
Ruda H, Salfi J, Philipose U, Saxena A, Lau KT, Tao Xu LZ, De Souza C, Aouba S, Yang S, Sun P, Nair S, Fernandes C. Transport and optical response of single nanowires Journal of Materials Science: Materials in Electronics. 20: S480-S486. DOI: 10.1007/S10854-008-9686-1 |
0.794 |
|
| 2009 |
Kasap S, DeCorby R, Ruda H, Hegmann F, Kashyap R. Preface Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S10-S15. DOI: 10.1002/Pssc.200960057 |
0.306 |
|
| 2008 |
Philipose U, Saxena A, Ruda HE, Simpson PJ, Wang YQ, Kavanagh KL. Defect studies of ZnSe nanowires. Nanotechnology. 19: 215715. PMID 21730594 DOI: 10.1088/0957-4484/19/21/215715 |
0.674 |
|
| 2008 |
Barzda V, Cisek R, Spencer TL, Philipose U, Ruda HE, Shik A. Giant anisotropy of second harmonic generation for a single ZnSe nanowire Applied Physics Letters. 92. DOI: 10.1063/1.2901023 |
0.361 |
|
| 2008 |
Saxena A, Yang S, Philipose U, Ruda HE. Excitonic and pair-related photoluminescence in ZnSe nanowires Journal of Applied Physics. 103. DOI: 10.1063/1.2885729 |
0.678 |
|
| 2008 |
Petukhova A, Paton AS, Wei Z, Gourevich I, Nair SV, Ruda HE, Shik A, Kumacheva E. Polymer multilayer microspheres loaded with semiconductor quantum dots Advanced Functional Materials. 18: 1961-1968. DOI: 10.1002/Adfm.200701441 |
0.33 |
|
| 2007 |
Sugisaki M, Ren HW, Nair SV, Tokunaga E, Nishi K, Masumoto Y, Ruda HE. Anisotropic optical response of InP self-assembled quantum dots studied by pump-probe spectroscopy Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.125315 |
0.352 |
|
| 2007 |
Wang YQ, Philipose U, Xu T, Ruda HE, Kavanagh KL. Twinning modulation in ZnSe nanowires Semiconductor Science and Technology. 22: 175-178. DOI: 10.1088/0268-1242/22/3/001 |
0.394 |
|
| 2007 |
Othonos A, Lioudakis E, Philipose U, Ruda HE. Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires Applied Physics Letters. 91. DOI: 10.1063/1.2825290 |
0.35 |
|
| 2007 |
Achoyan A, Petrosyan S, Craig W, Ruda HE, Shik A. Electron screening in nanostructures Journal of Applied Physics. 101. DOI: 10.1063/1.2734954 |
0.325 |
|
| 2007 |
Salfi J, Philipose U, Aouba S, Nair SV, Ruda HE. Electron transport in degenerate Mn-doped ZnO nanowires Applied Physics Letters. 90. DOI: 10.1063/1.2431788 |
0.721 |
|
| 2007 |
Matsuda K, Nair SV, Ruda HE, Sugimoto Y, Saiki T, Yamaguchi K. Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy Applied Physics Letters. 90. DOI: 10.1063/1.2425039 |
0.323 |
|
| 2007 |
Philipose U, Sun P, Xu T, Ruda HE, Yang L, Kavanagh KL. Structure and photoluminescence of ZnSe nanostructures fabricated by vapor phase growth Journal of Applied Physics. 101. DOI: 10.1063/1.2424400 |
0.383 |
|
| 2007 |
Ikezawa M, Nair S, Suto F, Masumoto Y, Uchiyama C, Aihara M, Ruda H. Photon echo study of excitons and excitonic complexes in self-assembled quantum dots Journal of Luminescence. 122: 730-734. DOI: 10.1016/J.Jlumin.2006.01.273 |
0.331 |
|
| 2006 |
Shik A, Ruda HE, Rotkin SV. Electrostatics of nanowires and nanotubes: Application for field-effect devices International Journal of High Speed Electronics and Systems. 16: 937-958. DOI: 10.1142/S0129156406004090 |
0.302 |
|
| 2006 |
Bakueva L, Bogdanovich E, Gorelikov I, Dumont DJ, Rowlands JA, Ruda HE, Shik A. Composite metal-semiconductor nanodots for medical imaging Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6095. DOI: 10.1117/12.644801 |
0.329 |
|
| 2006 |
Ruda HE, Shik A. Polarization-sensitive optical properties of metallic and semiconducting nanowires Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6099. DOI: 10.1117/12.644698 |
0.346 |
|
| 2006 |
Ikezawa M, Nair SV, Ren HW, Masumoto Y, Ruda H. Biexciton binding energy in parabolic GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.125321 |
0.307 |
|
| 2006 |
Salfi J, Philipose U, De Sousa CF, Aouba S, Ruda HE. Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection Applied Physics Letters. 89. DOI: 10.1063/1.2424653 |
0.721 |
|
| 2006 |
Philipose U, Xu T, Yang S, Sun P, Ruda HE, Wang YQ, Kavanagh KL. Enhancement of band edge luminescence in ZnSe nanowires Journal of Applied Physics. 100. DOI: 10.1063/1.2362930 |
0.379 |
|
| 2006 |
Philipose U, Nair SV, Trudel S, De Souza CF, Aouba S, Hill RH, Ruda HE. High-temperature ferromagnetism in Mn-doped ZnO nanowires 263101 Applied Physics Letters. 88. DOI: 10.1063/1.2217707 |
0.354 |
|
| 2006 |
Blumin M, Ruda HE, Savelyev IG, Shik A, Wang H. Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface Journal of Applied Physics. 99. DOI: 10.1063/1.2197027 |
0.359 |
|
| 2006 |
Lui GP, Qiao B, Ruda HE. Nanowire based quantum interference sensors for electromagnetic radiation Journal of Applied Physics. 99. DOI: 10.1063/1.2192287 |
0.328 |
|
| 2006 |
Philipose U, Ruda HE, Shik A, De Souza CF, Sun P. Conductivity and photoconductivity in undoped ZnSe nanowire array Journal of Applied Physics. 99. DOI: 10.1063/1.2183347 |
0.377 |
|
| 2006 |
Ruda HE, Polanyi JC, Yang J, Wu Z, Philipose U, Xu T, Yang S, Kavanagh KL, Liu JQ, Yang L, Wang Y, Robbie K, Kaminska K, Cooke DG, Hegmann FA, et al. Developing 1D nanostructure arrays for future nanophotonics Nanoscale Research Letters. 1: 99-119. DOI: 10.1007/S11671-006-9016-6 |
0.342 |
|
| 2006 |
Wang YQ, Philipose U, Ruda H, Kavanagh KL. Planar defects and phase transformation in ZnSe nanosaws Journal of Materials Science: Materials in Electronics. 17: 1065-1070. DOI: 10.1007/S10854-006-9006-6 |
0.334 |
|
| 2006 |
Ruda HE, Matsuura N. Properties and Applications of Photonic Crystals Optical Properties of Condensed Matter and Applications. 197-214. DOI: 10.1002/0470021942.ch9 |
0.454 |
|
| 2005 |
Ruda HE, Shik A. Polarization-sensitive optical phenomena in semiconducting and metallic nanowires Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.115308 |
0.347 |
|
| 2005 |
Ruda HE, Shik A. Plasmon phenomena and luminescence amplification in nanocomposite structures Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245328 |
0.311 |
|
| 2005 |
Ruda HE, Shik A. Scanning capacitance microscopy of nanostructures Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.075316 |
0.366 |
|
| 2005 |
Qiao B, Ruda HE, Yao XJ. Quantum computing using nanowires and nanotubes Physica a: Statistical Mechanics and Its Applications. 347: 168-176. DOI: 10.1016/J.Physa.2004.08.026 |
0.338 |
|
| 2005 |
Matsuura N, Yang S, Sun P, Ruda HE. Dejvelopment of highly-ordered, ferroelectric inverse opal films using sol-gel infiltration Applied Physics a: Materials Science and Processing. 81: 379-384. DOI: 10.1007/s00339-004-2562-9 |
0.478 |
|
| 2005 |
Shik A, Bakueva L, Ruda HE. Energy spectrum and optical properties of polymer-nanocrystal composites Physica Status Solidi (B) Basic Research. 242: 1183-1186. DOI: 10.1002/Pssb.200460715 |
0.331 |
|
| 2004 |
Rotkin SV, Ruda HE, Shik A. Field-effect transistor structures with quasi-one-dimensional channel International Journal of Nanoscience. 3: 161-170. DOI: 10.1142/S0219581X04001948 |
0.309 |
|
| 2004 |
Sun P, Matsuura N, Ruda HE. Crystallization and properties of PbO-doped Ba0.7Sr 0.3TiO3 films Journal of Applied Physics. 96: 3417-3423. DOI: 10.1063/1.1778220 |
0.53 |
|
| 2004 |
Wu ZH, Sun M, Mei XY, Ruda HE. Growth and photoluminescence characteristics of AlGaAs nanowires Applied Physics Letters. 85: 657-659. DOI: 10.1063/1.1775037 |
0.397 |
|
| 2004 |
Zhang G, Zou Q, Sun P, Mei X, Ruda HE. Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil Materials Letters. 58: 706-710. DOI: 10.1016/J.Matlet.2003.06.009 |
0.54 |
|
| 2004 |
Gerisch A, Lawniczak AT, Budiman RA, Fukś H, Ruda HE. Surface roughening in homoepitaxial growth: A lattice gas cellular automaton model Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 3305: 286-295. |
0.686 |
|
| 2003 |
Guo Q, Mei X, Ruda H, Tanaka T, Nishio M, Ogawa H. Fabrication of Indium Nitride Nanodots Using Anodic Alumina Templates Japanese Journal of Applied Physics. 42: L508-L510. DOI: 10.1143/Jjap.42.L508 |
0.57 |
|
| 2003 |
Zhang G, Sun P, Zou Q, Mei X, Ruda HE, Guo Q, Yu X, Ren D, Yan R. Dose Rate Dependence of Electrical Characteristics of Lead Zirconate Titanate Capacitors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42: 6491-6495. DOI: 10.1143/Jjap.42.6491 |
0.488 |
|
| 2003 |
Ruda HE, Shik A. Theoretical analysis of scanning capacitance microscopy Physical Review B - Condensed Matter and Materials Physics. 67: 2353091-2353097. DOI: 10.1103/Physrevb.67.235309 |
0.311 |
|
| 2003 |
Wu ZH, Mei X, Kim D, Blumin M, Ruda HE, Liu JQ, Kavanagh KL. Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires Applied Physics Letters. 83: 3368-3370. DOI: 10.1063/1.1618018 |
0.581 |
|
| 2003 |
Mei X, Blumin M, Sun M, Kim D, Wu ZH, Ruda HE, Guo QX. Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks Applied Physics Letters. 82: 967-969. DOI: 10.1063/1.1544065 |
0.577 |
|
| 2003 |
Matsuura N, Simpson TW, Mitchell IV, Mei XY, Morales P, Ruda HE. Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching Applied Physics Letters. 81: 4826-4828. DOI: 10.1063/1.1527693 |
0.63 |
|
| 2003 |
De Souza CF, Ruda HE, Fafard S. Surface photovoltage studies of multilayered structures Journal of Electroanalytical Chemistry. 559: 49-53. DOI: 10.1016/S0022-0728(03)00041-X |
0.354 |
|
| 2003 |
Mei X, Blumin M, Kim D, Wu Z, Ruda HE. Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masks Journal of Crystal Growth. 251: 253-257. DOI: 10.1016/S0022-0248(02)02421-1 |
0.583 |
|
| 2003 |
Gerisch A, Lawniczak AT, Budiman RA, Ruda HE, Fukś H. Lattice Gas Cellular Automaton Modeling of Surface Roughening in Homoepitaxial Growth in Nanowires Canadian Conference On Electrical and Computer Engineering. 2: 1413-1416. |
0.69 |
|
| 2002 |
Matsuura N, Simpson TW, McNorgan CP, Mitchell IV, Mei XY, Morales P, Ruda HE. Nanometer-scale pattern transfer using ion implantation Materials Research Society Symposium - Proceedings. 739: 237-242. DOI: 10.1557/Proc-739-H8.3 |
0.601 |
|
| 2002 |
Budiman RA, Ruda HE. Morphologies of self-assembled quantum dots: A variational approach Materials Research Society Symposium - Proceedings. 696: 181-186. DOI: 10.1557/Proc-707-N5.10.1 |
0.708 |
|
| 2002 |
Guo Q, Tanaka T, Nishio M, Ogawa H, Mei X, Ruda H. Fabrication of ZnTe Nanohole Arrays by Reactive Ion Etching Using Anodic Alumina Templates Japanese Journal of Applied Physics. 41: L118-L120. DOI: 10.1143/Jjap.41.L118 |
0.558 |
|
| 2002 |
Guo Q, Mei X, Ogawa H, Ruda H. Cathodoluminescence Study of Highly Ordered Arrays of InGaAs Quantum Dots Japanese Journal of Applied Physics. 41: 7297-7300. DOI: 10.1143/Jjap.41.7297 |
0.584 |
|
| 2002 |
Wu ZH, Mei XY, Kim D, Blumin M, Ruda HE. Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy Applied Physics Letters. 81: 5177-5179. DOI: 10.1063/1.1532772 |
0.35 |
|
| 2002 |
Kim D, Chen G, Mei XY, Ruda HE. Passivation of GaAs(110) with Ga 2O 3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy Journal of Applied Physics. 92: 2330-2334. DOI: 10.1063/1.1497455 |
0.341 |
|
| 2002 |
Mei X, Kim D, Ruda HE, Guo QX. Molecular-beam epitaxial growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks Applied Physics Letters. 81: 361-363. DOI: 10.1063/1.1484554 |
0.392 |
|
| 2002 |
Zou Q, Ruda HE, Sodhi RN. TiOx interlayer characterization for sol-gel derived Pb(Zr, Ti)O3 thin films on titanium foil Journal of Materials Science: Materials in Electronics. 13: 601-604. DOI: 10.1023/A:1020156316175 |
0.303 |
|
| 2002 |
Shik A, Yu S, Johnson E, Ruda H, Sargent EH. Carrier transport and luminescence in composite organic–inorganic light-emitting devices Solid-State Electronics. 46: 61-68. DOI: 10.1016/S0038-1101(01)00289-1 |
0.311 |
|
| 2002 |
Soten I, Miguez H, Yang S, Petrov S, Coombs N, Tetreault N, Matsuura N, Ruda H, Ozin G. Barium Titanate Inverted Opals—Synthesis, Characterization, and Optical Properties Advanced Functional Materials. 12: 71. DOI: 10.1002/1616-3028(20020101)12:1<71::Aid-Adfm71>3.0.Co;2-I |
0.351 |
|
| 2002 |
Budiman RA, Ruda HE. Smoluchowski ripening and random percolation in epitaxial Si1-xGex/Si(001) islands Physical Review B - Condensed Matter and Materials Physics. 65: 453151-4531511. |
0.683 |
|
| 2001 |
Budiman RA, Ruda HE, Perović DD, Bahierathan B. Critical behavior of epitaxial Si1−xGex/Si(001) islands Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1862-1867. DOI: 10.1116/1.1353543 |
0.315 |
|
| 2001 |
Ruda H, Shik A. Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy Physical Review B. 63. DOI: 10.1103/Physrevb.63.085203 |
0.328 |
|
| 2001 |
Shik A, Ruda H, Sargent EH. Non-equilibrium carriers and recombination phenomena in type-II quantum dots Nanotechnology. 12: 523-528. DOI: 10.1088/0957-4484/12/4/330 |
0.345 |
|
| 2000 |
Qiao B, Ruda HE, Baihua Q. Influence of temperature on magnetism in a quantum confined system Journal of Applied Physics. 87: 2520-2525. DOI: 10.1063/1.372213 |
0.304 |
|
| 2000 |
Budiman RA, Ruda HE. Relaxation model of coherent island formation in heteroepitaxial thin films Journal of Applied Physics. 88: 4586-4594. DOI: 10.1063/1.1311305 |
0.703 |
|
| 1999 |
Ruda HE. Reactions on semiconductor surfaces Science. 283: 646-647. DOI: 10.1126/Science.283.5402.646 |
0.328 |
|
| 1999 |
Qiao B, Ruda HE. Quantum computing using entanglement states in a photonic band gap Journal of Applied Physics. 86: 5237-5244. DOI: 10.1063/1.371505 |
0.307 |
|
| 1999 |
Mei X, Ruda HE, Berdinskihk T, Buchanan M. Characterization of GaP pyramidal textured p-n junctions Solid-State Electronics. 43: 779-783. DOI: 10.1016/S0038-1101(98)00303-7 |
0.561 |
|
| 1998 |
Qiao B, Ruda HE. Spectral decomposition of excitons confined in a quantum dot by a parabolic potential and under the influence of an external field Journal of Applied Physics. 84: 1052-1058. DOI: 10.1063/1.368103 |
0.304 |
|
| 1998 |
Mei X, Ruda HE, Berdiskihk T, Buchanan M. Liquid phase epitaxial growth of GaP layers on textured GaP (1 1 1)B substrates Journal of Crystal Growth. 193: 148-155. DOI: 10.1016/S0022-0248(98)00404-7 |
0.565 |
|
| 1997 |
Liu Q, Ruda HE. Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs Physical Review B - Condensed Matter and Materials Physics. 55: 10541-10548. DOI: 10.1103/Physrevb.55.10541 |
0.332 |
|
| 1997 |
Jedral L, Edirisinghe C, Ruda H, Moore A, Lent B. Optical characterization of AlInGaAs/InGaAs quantum well structures on InGaAs substrates Journal of Applied Physics. 82: 375-379. DOI: 10.1063/1.365822 |
0.375 |
|
| 1997 |
Ruda HE, Jedral LZ, Mannik L. Semiconductor based light emitters powered by tritium Applied Physics Letters. 71: 2644-2646. DOI: 10.1063/1.120166 |
0.316 |
|
| 1997 |
Mei X, Crnatovic A, Jedral LZ, Ruda HE, Lu ZH, Dion M. Liquid-phase epitaxial growth of GaAsxP1 − x layers on GaP substrates Journal of Crystal Growth. 179: 50-56. DOI: 10.1016/S0022-0248(97)00010-9 |
0.519 |
|
| 1996 |
Westwater J, Gosain DP, Tomiya S, Hirano Y, Usui S, Ruda H. The Characteristics and Oxidation of Vapor - Liquid - Solid Grown Si Nanowires Mrs Proceedings. 452. DOI: 10.1557/Proc-452-237 |
0.356 |
|
| 1996 |
Liu Q, Ruda HE, Koutzarov IP, Jedral L, Chen G, Prasad M. Role Of Deep Level Trapping On Surface Photovoltage Of semiinsulating GaAs Mrs Proceedings. 426. DOI: 10.1557/Proc-426-569 |
0.336 |
|
| 1996 |
Koutzarov IP, Edirisinghe CH, Ruda HE, Jedral LZ, Liu Q, Guo-Ping J, Xia H, Lennard WN, Rodriguez-Fernandez L. Orientation dependence of surface passivation for semi-insulating GaAs Materials Research Society Symposium - Proceedings. 421: 93-98. DOI: 10.1557/Proc-421-93 |
0.354 |
|
| 1996 |
Qu XH, Ruda H, Janz S, SpringThorpe AJ. Erratum: ‘‘Enhancement of second harmonic generation at 1.06 μm using a quasi‐phase‐matched AlGaAs/GaAs asymmetric quantum well structure’’ [Appl. Phys. Lett. 65, 3176 (1994)] Applied Physics Letters. 68: 723-723. DOI: 10.1063/1.116795 |
0.302 |
|
| 1996 |
Budiman RA, Mandelis A, Koutzarov IP, Ruda HE, Shen J. Noncontact photothermal radiometric deep-level transient spectroscopy of undoped semi-insulating GaAs Progress in Natural Science. 6. |
0.719 |
|
| 1995 |
Edirisinghe C, Ruda HE, Koutzarov I, Liu Q, Jedral L, Boudreau MG, Boumerzoug M, Brown J, Mascher P, Moore A, Henderson R. Passivation Studies on AlGaAs Surfaces Suitable for High Power Laser Development Mrs Proceedings. 378. DOI: 10.1557/Proc-378-1007 |
0.331 |
|
| 1994 |
Qu XH, Ruda H. Microwave and millimeter wave generation using nonlinear optical mixing in asymmetric quantum wells Journal of Applied Physics. 75: 54-57. DOI: 10.1063/1.355838 |
0.323 |
|
| 1994 |
Qu XH, Ruda H, Janz S, SpringThorpe AJ. Enhancement of second harmonic generation at 1.06 μm using a quasi‐phase‐matched AlGaAs/GaAs asymmetric quantum well structure Applied Physics Letters. 65: 3176-3178. DOI: 10.1063/1.112958 |
0.339 |
|
| 1993 |
Liu Q, Chen C, Ruda H. Surface photovoltage in undoped semi‐insulating GaAs Journal of Applied Physics. 74: 7492-7496. DOI: 10.1063/1.354973 |
0.343 |
|
| 1993 |
Qu XH, Ruda H. Second‐harmonic generation using heavy‐hole/light‐hole intersubband transitions in asymmetric quantum wells Applied Physics Letters. 62: 1946-1948. DOI: 10.1063/1.109499 |
0.322 |
|
| 1984 |
Walukiewicz W, Ruda HE, Lagowski J, Gatos HC. Electron mobility in modulation-doped heterostructures Physical Review B. 30: 4571-4582. DOI: 10.1103/Physrevb.30.4571 |
0.494 |
|
| 1984 |
Walukiewicz W, Ruda HE, Lagowski J, Gatos HC. Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructures Physical Review B. 29: 4818-4820. DOI: 10.1103/Physrevb.29.4818 |
0.493 |
|
| Show low-probability matches. |