Year |
Citation |
Score |
2019 |
Harris JS, Gaddy BE, Collazo R, Sitar Z, Irving DL. Oxygen and silicon point defects in
Al0.65Ga0.35N Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.054604 |
0.591 |
|
2018 |
Harris JS, Baker JN, Gaddy BE, Bryan I, Bryan Z, Mirrielees KJ, Reddy P, Collazo R, Sitar Z, Irving DL. On compensation in Si-doped AlN Applied Physics Letters. 112: 152101. DOI: 10.1063/1.5022794 |
0.652 |
|
2018 |
Bryan I, Bryan Z, Washiyama S, Reddy P, Gaddy B, Sarkar B, Breckenridge MH, Guo Q, Bobea M, Tweedie J, Mita S, Irving D, Collazo R, Sitar Z. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102. DOI: 10.1063/1.5011984 |
0.649 |
|
2015 |
Sachet E, Shelton CT, Harris JS, Gaddy BE, Irving DL, Curtarolo S, Donovan BF, Hopkins PE, Sharma PA, Sharma AL, Ihlefeld J, Franzen S, Maria JP. Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics. Nature Materials. 14: 414-20. PMID 25686264 DOI: 10.1038/Nmat4203 |
0.643 |
|
2014 |
Gaddy BE, Paisley EA, Maria JP, Irving DL. Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125403 |
0.546 |
|
2014 |
Bryan Z, Bryan I, Gaddy BE, Reddy P, Hussey L, Bobea M, Guo W, Hoffmann M, Kirste R, Tweedie J, Gerhold M, Irving DL, Sitar Z, Collazo R. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters. 105. DOI: 10.1063/1.4903058 |
0.657 |
|
2014 |
Gaddy BE, Bryan Z, Bryan I, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Kirste R, Sitar Z, Collazo R, Irving DL. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104. DOI: 10.1063/1.4878657 |
0.642 |
|
2014 |
Paisley EA, Gaddy BE, Lebeau JM, Shelton CT, Biegalski MD, Christen HM, Losego MD, Mita S, Collazo R, Sitar Z, Irving DL, Maria JP. Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115. DOI: 10.1063/1.4861172 |
0.632 |
|
2013 |
Gaddy BE, Bryan Z, Bryan I, Kirste R, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Sitar Z, Collazo R, Irving DL. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103. DOI: 10.1063/1.4824731 |
0.628 |
|
2013 |
Gaddy BE, Kingon AI, Irving DL. Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation Journal of Applied Physics. 113. DOI: 10.1063/1.4804954 |
0.578 |
|
2012 |
Collazo R, Xie J, Gaddy BE, Bryan Z, Kirste R, Hoffmann M, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Irving DL, Sitar Z. On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters. 100. DOI: 10.1063/1.4717623 |
0.628 |
|
2011 |
Paisley EA, Losego MD, Gaddy BE, Tweedie JS, Collazo R, Sitar Z, Irving DL, Maria JP. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. Nature Communications. 2: 461. PMID 21897372 DOI: 10.1038/Ncomms1470 |
0.625 |
|
Low-probability matches (unlikely to be authored by this person) |
2016 |
Alden D, Bryan Z, Gaddy B, Bryan I, Callsen G, Koukitu A, Kumagai Y, Hoffmann A, Irving D, Sitar Z, Collazo R. On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates Ecs Transactions. 72: 31-40. DOI: 10.1149/07205.0031ECST |
0.257 |
|
2017 |
Gaddy BE, Sivaram V, Jones TB, Wayman L. Venture Capital and Cleantech: The wrong model for energy innovation Energy Policy. 102: 385-395. DOI: 10.1016/J.Enpol.2016.12.035 |
0.211 |
|
Hide low-probability matches. |