| Year |
Citation |
Score |
| 2019 |
Hite J, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Ferromagnetic Properties of GaGdN Co-Doped with Si Ecs Transactions. 3: 409-414. DOI: 10.1149/1.2357231 |
0.649 |
|
| 2013 |
Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl |
0.494 |
|
| 2013 |
Douglas EA, Gila BP, Abernathy CR, Ren F, Pearton SJ. GaN High Electron Mobility Transistor Degradation: Effect of RF Stress Ecs Transactions. 50: 261-272. DOI: 10.1149/05006.0261ecst |
0.474 |
|
| 2010 |
Davies RP, Gila BP, Abernathy CR, Pearton SJ, Stanton CJ. Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502. DOI: 10.1063/1.3437085 |
0.8 |
|
| 2009 |
Douglas EA, Cheney DP, Chen KHP, Chang CP, Leu LP, Gila BP, Abernathy CR, Pearton SJ. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-04 |
0.477 |
|
| 2009 |
Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F. Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188. DOI: 10.1149/1.3097392 |
0.576 |
|
| 2009 |
Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F. REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053. DOI: 10.1080/00986440902896956 |
0.7 |
|
| 2009 |
Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568 |
0.816 |
|
| 2008 |
Stewart AD, Scheuermann AG, Gerger AP, Gila BP, Abernathy CR, Pearton SJ. Optimization of Samarium Oxide Deposition on Gallium Arsenide Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A10-03 |
0.745 |
|
| 2008 |
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19. DOI: 10.1149/1.2824500 |
0.498 |
|
| 2008 |
Hite JK, Allums KK, Thaler GT, Abernathy CR, Pearton SJ, Frazier RM, Dwivedi R, Wilkins R, Zavada JM. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN New Journal of Physics. 10: 055005. DOI: 10.1088/1367-2630/10/5/055005 |
0.79 |
|
| 2008 |
Stewart AD, Gerger A, Gila BP, Abernathy CR, Pearton SJ. Determination of Sm2 O3 GaAs heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 92. DOI: 10.1063/1.2911726 |
0.698 |
|
| 2008 |
Jang JH, Herrero AM, Gila B, Abernathy C, Craciun V. Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2899964 |
0.807 |
|
| 2008 |
Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644 |
0.799 |
|
| 2008 |
Jang JH, Herrero AM, Son S, Gila B, Abernathy C, Craciun V. Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition Materials Research Society Symposium Proceedings. 1068: 123-128. |
0.814 |
|
| 2007 |
Polyakov AY, Smirnov NB, Gila BP, Hlad M, Gerger AP, Abernathy CR, Pearton SJ. Studies of Interface States in Sc[sub 2]O[sub 3]∕GaN, MgO∕GaN, and MgScO∕GaN structures Journal of the Electrochemical Society. 154: H115. DOI: 10.1149/1.2405865 |
0.803 |
|
| 2007 |
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region Applied Physics Letters. 91: 012110. DOI: 10.1063/1.2754637 |
0.466 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572 |
0.557 |
|
| 2007 |
Kang B, Wang H, Ren F, Hlad M, Gila B, Abernathy C, Pearton S, Li C, Low Z, Lin J, Johnson J, Rajagopal P, Roberts J, Piner E, Linthicum K. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors Journal of Electronic Materials. 37: 550-553. DOI: 10.1007/S11664-007-0298-Y |
0.774 |
|
| 2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3 |
0.539 |
|
| 2007 |
Voss LF, Stafford L, Thaler GT, Abernathy CR, Pearton SJ, Chen JJ, Ren F. Annealing and measurement temperature dependence of W 2B- and W 2B 5-based rectifying contacts to p-GaN Journal of Electronic Materials. 36: 384-390. DOI: 10.1007/S11664-006-0054-8 |
0.685 |
|
| 2007 |
Allums K, Hlad M, Gerger A, Gila B, Abernathy C, Pearton S, Ren F, Dwivedi R, Fogarty T, Wilkins R. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes Journal of Electronic Materials. 36: 519-523. DOI: 10.1007/S11664-006-0035-Y |
0.809 |
|
| 2007 |
Lee GS, Lee C, Choi H, Ahn DJ, Kim J, Gila BP, Abernathy CR, Pearton SJ, Ren F. Polydiacetylene-based selective NH3gas sensor using Sc2O3/GaN structures Physica Status Solidi (a). 204: 3556-3561. DOI: 10.1002/Pssa.200723066 |
0.485 |
|
| 2006 |
Kang B, Wang H, Tien LC, Ren F, Gila B, Norton D, Abernathy C, Lin J, Pearton S. Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors Sensors. 6: 643-666. DOI: 10.3390/S6060643 |
0.538 |
|
| 2006 |
Hite J, Thaler GT, Park JH, Steckl AJ, Abernathy CR, Zavada JM, Pearton S. Magnetic and Optical Properties of Eu-doped GaN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-01 |
0.795 |
|
| 2006 |
Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN Epilayers Mrs Proceedings. 955. DOI: 10.1557/PROC-0955-I10-02 |
0.667 |
|
| 2006 |
Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04 |
0.82 |
|
| 2006 |
Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03 |
0.789 |
|
| 2006 |
Gila BP, Hlad M, Anderson T, Chen JJ, Allums KK, Gerger A, Herrero A, Jang S, Kang B, Abernathy CR, Ren F, Pearton SJ. Oxide dielectrics for reliable passivation of AlGaN/GaN HEMTS and insulated gates Ecs Transactions. 3: 141-150. DOI: 10.1149/1.2357204 |
0.788 |
|
| 2006 |
Hite J, Thaler GT, Khanna R, Abernathy CR, Pearton SJ, Park JH, Steckl AJ, Zavada JM. Optical and magnetic properties of Eu-doped GaN Applied Physics Letters. 89: 132119. DOI: 10.1063/1.2358293 |
0.796 |
|
| 2006 |
Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552 |
0.757 |
|
| 2006 |
Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082 |
0.824 |
|
| 2006 |
Herrero AM, Gila BP, Abernathy CR, Pearton SJ, Craciun V, Siebein K, Ren F. Epitaxial growth of Sc2O3 films on GaN Applied Physics Letters. 89: 092117. DOI: 10.1063/1.2270058 |
0.81 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Erratum: Band offsets in the Sc2O3∕GaN heterojunction system [Appl. Phys. Lett.
88, 142115
(2006)] Applied Physics Letters. 88: 249901. DOI: 10.1063/1.2213199 |
0.773 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Band offsets in the Sc2O3∕GaN heterojunction system Applied Physics Letters. 88: 142115. DOI: 10.1063/1.2194314 |
0.799 |
|
| 2006 |
Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 88: 042113. DOI: 10.1063/1.2170140 |
0.806 |
|
| 2006 |
Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790 |
0.823 |
|
| 2006 |
Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018 |
0.802 |
|
| 2006 |
Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1 |
0.8 |
|
| 2006 |
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2 |
0.814 |
|
| 2006 |
Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9 |
0.807 |
|
| 2005 |
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394 |
0.819 |
|
| 2005 |
Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1. DOI: 10.1116/1.1829059 |
0.784 |
|
| 2005 |
Chen WM, Buyanova IA, Nishibayashi K, Kayanuma K, Seo K, Murayama A, Oka Y, Thaler G, Frazier R, Abernathy CR, Ren F, Pearton SJ, Pan C, Chen G, Chyi J. Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection Applied Physics Letters. 87: 192107. DOI: 10.1063/1.2125125 |
0.732 |
|
| 2005 |
Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617 |
0.506 |
|
| 2005 |
Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987 |
0.775 |
|
| 2005 |
Kang BS, Kim J, Jang S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952568 |
0.485 |
|
| 2005 |
Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Growth and thermal stability of Ga(1-X) CrXN films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1895479 |
0.805 |
|
| 2005 |
Frazier RM, Thaler GT, Leifer JY, Hite JK, Gila BP, Abernathy CR, Pearton SJ. Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy Applied Physics Letters. 86: 052101. DOI: 10.1063/1.1857074 |
0.819 |
|
| 2005 |
Pearton S, Norton D, Frazier R, Han S, Abernathy C, Zavada J. Spintronics device concepts Iee Proceedings - Circuits, Devices and Systems. 152: 312. DOI: 10.1049/IP-CDS:20045129 |
0.594 |
|
| 2005 |
Kang B, Kim S, Ren F, Gila B, Abernathy C, Pearton S. Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection Sensors and Actuators B: Chemical. 104: 232-236. DOI: 10.1016/J.Snb.2004.05.018 |
0.539 |
|
| 2005 |
Chu S, Ren F, Pearton S, Kang B, Kim S, Gila B, Abernathy C, Chyi J, Johnson W, Lin J. Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Materials Science and Engineering: A. 409: 340-347. DOI: 10.1016/J.Msea.2005.05.119 |
0.497 |
|
| 2005 |
Kang B, Kim S, Ren F, Ip K, Heo Y, Gila B, Abernathy C, Norton D, Pearton S. Detection of CO using bulk ZnO Schottky rectifiers Applied Physics A. 80: 259-261. DOI: 10.1007/S00339-004-2666-2 |
0.508 |
|
| 2005 |
Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Baik KH, Gila BP, Abernathy CR, et al. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Physica Status Solidi C: Conferences. 2: 2672-2675. DOI: 10.1002/Pssc.200461268 |
0.543 |
|
| 2005 |
Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Heo YH, Ivill M, Norton DP, Park YD. Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides Cheminform. 36. DOI: 10.1002/CHIN.200543245 |
0.628 |
|
| 2004 |
Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ. Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Journal of the Electrochemical Society. 151: G915-G918. DOI: 10.1149/1.1803561 |
0.533 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Danilin VN, Zhukova TA, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of Sc[sub 2]O[sub 3] Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors Journal of the Electrochemical Society. 151: G497. DOI: 10.1149/1.1770954 |
0.517 |
|
| 2004 |
Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ. Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors Journal of the Electrochemical Society. 151: G468. DOI: 10.1149/1.1758817 |
0.549 |
|
| 2004 |
Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic AlGaCrP Films by Ion Implantation Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1640491 |
0.823 |
|
| 2004 |
Thaler GT, Frazier RM, Stapleton J, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM. Properties of (Ga, Mn)N With and Without Detectable Second Phases Electrochemical and Solid-State Letters. 7: G34-G36. DOI: 10.1149/1.1635771 |
0.789 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Optical and electrical properties of AlCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2758. DOI: 10.1116/1.1819927 |
0.791 |
|
| 2004 |
Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan C, Chen G, Chyi J, Zavada JM. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2668. DOI: 10.1116/1.1819897 |
0.753 |
|
| 2004 |
Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Norton DP, Ren F, Park YD, Zavada JM, Buyanova IA, Chen WM, Hebard AF. Wide bandgap GaN-based semiconductors for spintronics Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/7/R03 |
0.794 |
|
| 2004 |
Pearton SJ, Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Lin J, Chu SNG. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing Journal of Physics: Condensed Matter. 16: R961-R994. DOI: 10.1088/0953-8984/16/29/R02 |
0.515 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Pearton SJ, Frazier RM, Thaler GT, Abernathy CR, Zavada JM. High-dose Mn and Cr implantation into p-AlGaN films Semiconductor Science and Technology. 19: 1169-1173. DOI: 10.1088/0268-1242/19/10/001 |
0.798 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Liefer JY, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of highly Cr-doped AlN Applied Physics Letters. 85: 4067-4069. DOI: 10.1063/1.1812845 |
0.793 |
|
| 2004 |
Kang BS, Kim S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes Applied Physics Letters. 85: 2962-2964. DOI: 10.1063/1.1800282 |
0.487 |
|
| 2004 |
Heo YW, Abernathy C, Pruessner K, Sigmund W, Norton DP, Overberg M, Ren F, Chisholm MF. Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires Journal of Applied Physics. 96: 3424-3428. DOI: 10.1063/1.1774257 |
0.645 |
|
| 2004 |
Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Hydrogen-induced reversible changes in drain current in Sc 2O 3/AlGaN/GaN high electron mobility transistors Applied Physics Letters. 84: 4635-4637. DOI: 10.1063/1.1759372 |
0.529 |
|
| 2004 |
Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of nucleation layer on the magnetic properties of GaMnN Applied Physics Letters. 84: 2578-2580. DOI: 10.1063/1.1695207 |
0.828 |
|
| 2004 |
Buyanova IA, Izadifard M, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J, Zavada JM. On the origin of spin loss in GaMnN/InGaN light-emitting diodes Applied Physics Letters. 84: 2599-2601. DOI: 10.1063/1.1695100 |
0.606 |
|
| 2004 |
Thaler G, Frazier R, Gila B, Stapleton J, Davidson M, Abernathy CR, Pearton SJ, Segre C. Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN Applied Physics Letters. 84: 1314-1316. DOI: 10.1063/1.1649819 |
0.82 |
|
| 2004 |
Kang BS, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor Applied Physics Letters. 84: 1123-1125. DOI: 10.1063/1.1648134 |
0.529 |
|
| 2004 |
Luo B, Mehandru R, Kang B, Kim J, Ren F, Gila B, Onstine A, Abernathy C, Pearton S, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, et al. Small signal measurement of Sc2O3 AlGaN/GaN moshemts Solid-State Electronics. 48: 355-358. DOI: 10.1016/S0038-1101(03)00322-8 |
0.502 |
|
| 2004 |
Pearton S, Abernathy C, Gila B, Ren F, Zavada J, Park Y. Enhanced functionality in GaN and SiC devices by using novel processing Solid-State Electronics. 48: 1965-1974. DOI: 10.1016/J.Sse.2004.05.061 |
0.595 |
|
| 2004 |
Polyakov A, Govorkov A, Smirnov N, Pashkova N, Pearton S, Ip K, Frazier R, Abernathy C, Norton D, Zavada J, Wilson R. Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe Materials Science in Semiconductor Processing. 7: 77-81. DOI: 10.1016/J.Mssp.2004.03.001 |
0.666 |
|
| 2004 |
Gila BP, Ren F, Abernathy CR. Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices Materials Science and Engineering R: Reports. 44: 151-184. DOI: 10.1016/J.Mser.2004.06.001 |
0.564 |
|
| 2004 |
Buyanova IA, Izadifard M, Storasta L, Chen WM, Kim J, Ren F, Thaler G, Abernathy CR, Pearton SJ, Pan C-, Chen G-, Chyi J-, Zavada JM. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes Journal of Electronic Materials. 33: 467-471. DOI: 10.1007/S11664-004-0204-9 |
0.659 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr Journal of Electronic Materials. 33: 384-388. DOI: 10.1007/S11664-004-0188-5 |
0.797 |
|
| 2004 |
Polyakov AY, Smirnov NB, Govorkov AV, Kim J, Ren F, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Buyanova IA, Rudko GY, Chen WM, Pan C-, Chen G-, et al. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes Journal of Electronic Materials. 33: 241-247. DOI: 10.1007/S11664-004-0186-7 |
0.815 |
|
| 2004 |
Kim J, Ren F, Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Park YD. Dilute Magnetic GaN, SiC and Related Semiconductors Cheminform. 35. DOI: 10.1002/chin.200422246 |
0.634 |
|
| 2003 |
Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Norton DP, Kelly J, Rairigh R, Hebard AF, Park YD, Zavada JM. Wide bandgap materials for semiconductor spintronics Materials Research Society Symposium - Proceedings. 799: 287-298. DOI: 10.1557/Proc-799-Z9.6 |
0.789 |
|
| 2003 |
Onstine AH, Herrero A, Gila BP, Kim J, Mehandru R, Abernathy CR, Ren F, Pearton SJ. Growth of Scandium Magnesium Oxide on GaN Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E8.6 |
0.818 |
|
| 2003 |
Gila B, Luo B, Kim J, Mehandru R, LaRoche J, Onstine A, Lambers E, Siebein K, Abernathy C, Ren F, Pearton S. The Oxide/Nitride Interface: a study for gate dielectrics and field passivation Mrs Proceedings. 786. DOI: 10.1557/Proc-786-E8.5 |
0.571 |
|
| 2003 |
Ren F, Luo B, Kim J, Mehandru R, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Irokawa Y. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Mrs Proceedings. 764. DOI: 10.1557/PROC-764-C4.1 |
0.565 |
|
| 2003 |
Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F. Simulated High-Temperature Characteristics of Sc[sub 2]O[sub 3]/GaN MOSFETs Electrochemical and Solid-State Letters. 6: G149. DOI: 10.1149/1.1623373 |
0.548 |
|
| 2003 |
Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725 |
0.787 |
|
| 2003 |
Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F. Effects of Oxide Thickness and Gate Length on DC Performance of Submicrometer MgO/GaN MOSFETs Electrochemical and Solid-State Letters. 6: G119. DOI: 10.1149/1.1603971 |
0.53 |
|
| 2003 |
Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R. Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1540791 |
0.511 |
|
| 2003 |
Gila BP, Onstine AH, Kim J, Allums KK, Ren F, Abernathy CR, Pearton SJ. Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2368. DOI: 10.1116/1.1620516 |
0.591 |
|
| 2003 |
Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Magnetic properties of Mn-implanted AlGaP alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2093-2097. DOI: 10.1116/1.1609473 |
0.819 |
|
| 2003 |
Ip K, Frazier RM, Heo YW, Norton DP, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Ferromagnetism in Mn- and Co-implanted ZnO nanorods Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1476. DOI: 10.1116/1.1585069 |
0.645 |
|
| 2003 |
Ip K, Frazier RM, Heo YW, Norton DP, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Ferromagnetism in Mn- and Co-implanted ZnO nanorods Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1476-1481. DOI: 10.1116/1.1585069 |
0.688 |
|
| 2003 |
Pearton SJ, Abernathy CR, Ren F, Norton DP, Hebard AF, Zavada JM, Wilson RG. Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 110-111. DOI: 10.1109/ISCS.2003.1239930 |
0.318 |
|
| 2003 |
Ren F, Kim J, Gila BP, Abernathy CR, Pearton SJ, Baca AG, Briggs RD, Chung GY. High temperature GaN based Schottky diode gas sensors Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 61-62. DOI: 10.1109/ISCS.2003.1239906 |
0.528 |
|
| 2003 |
Park YD, Lim JD, Suh KS, Shim SB, Lee JS, Abernathy CR, Pearton SJ, Kim YS, Khim ZG, Wilson RG. Carrier-mediated ferromagnetic ordering in Mn ion-implantedp+GaAs:C Physical Review B. 68. DOI: 10.1103/Physrevb.68.085210 |
0.304 |
|
| 2003 |
Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151 |
0.779 |
|
| 2003 |
Moser NA, Gillespie JK, Via GD, Crespo A, Yannuzzi MJ, Jessen GH, Fitch RC, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 4178-4180. DOI: 10.1063/1.1628394 |
0.533 |
|
| 2003 |
Polyakov AY, Smirnov NB, Govorkov AV, Danilin VN, Zhukova TA, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 83: 2608-2610. DOI: 10.1063/1.1614839 |
0.59 |
|
| 2003 |
Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Transition metal ion implantation into AlGaN Journal of Applied Physics. 94: 4956-4960. DOI: 10.1063/1.1613375 |
0.775 |
|
| 2003 |
Frazier R, Thaler G, Overberg M, Gila B, Abernathy CR, Pearton SJ. Indication of hysteresis in AlMnN Applied Physics Letters. 83: 1758-1760. DOI: 10.1063/1.1604465 |
0.817 |
|
| 2003 |
Seo SSA, Kim MW, Lee YS, Noh TW, Park YD, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Observation of sphere resonance peak in ferromagnetic GaN:Mn Applied Physics Letters. 82: 4749-4751. DOI: 10.1063/1.1588741 |
0.787 |
|
| 2003 |
Frazier RM, Stapleton J, Thaler GT, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Hebard AF, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Zavada JM, Wilson RG. Properties of Co-, Cr-, or Mn-implanted AlN Journal of Applied Physics. 94: 1592-1596. DOI: 10.1063/1.1586987 |
0.79 |
|
| 2003 |
Mehandru R, Luo B, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, Sewell J, et al. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters. 82: 2530-2532. DOI: 10.1063/1.1567051 |
0.562 |
|
| 2003 |
Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Shlensky AA, Pearton SJ, Overberg ME, Abernathy CR, Zavada JM, Wilson RG. Electrical and optical properties of Cr and Fe implantedn-GaN Journal of Applied Physics. 93: 5388-5396. DOI: 10.1063/1.1565677 |
0.666 |
|
| 2003 |
Luo B, Kim J, Ren F, Gillespie JK, Fitch RC, Sewell J, Dettmer R, Via GD, Crespo A, Jenkins TJ, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, et al. Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 82: 1428-1430. DOI: 10.1063/1.1559631 |
0.516 |
|
| 2003 |
Kim J, Ren F, Thaler GT, Frazier R, Abernathy CR, Pearton SJ, Zavada JM, Wilson RG. Vertical and lateral mobilities in n-(Ga, Mn)N Applied Physics Letters. 82: 1565-1567. DOI: 10.1063/1.1559442 |
0.781 |
|
| 2003 |
Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic semiconductors based upon AlGaP Journal of Applied Physics. 93: 7861-7863. DOI: 10.1063/1.1556247 |
0.81 |
|
| 2003 |
Kim J, Ren F, Gila BP, Abernathy CR, Pearton SJ. Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes Applied Physics Letters. 82: 739-741. DOI: 10.1063/1.1541944 |
0.507 |
|
| 2003 |
Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N, Hebard AF, Park YD, Ren F, Kim J, Boatner LA. Wide band gap ferromagnetic semiconductors and oxides Journal of Applied Physics. 93: 1-13. DOI: 10.1063/1.1517164 |
0.802 |
|
| 2003 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jenkins T, et al. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors Electronics Letters. 39: 809-810. DOI: 10.1049/El:20030525 |
0.493 |
|
| 2003 |
Ivill M, Overberg ME, Abernathy CR, Norton DP, Hebard AF, Theodoropoulou N, Budai JD. Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition Solid-State Electronics. 47: 2215-2220. DOI: 10.1016/S0038-1101(03)00200-4 |
0.666 |
|
| 2003 |
Gila B, Kim J, Luo B, Onstine A, Johnson W, Ren F, Abernathy C, Pearton S. Advantages and limitations of MgO as a dielectric for GaN Solid-State Electronics. 47: 2139-2142. DOI: 10.1016/S0038-1101(03)00186-2 |
0.56 |
|
| 2003 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, et al. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Solid-State Electronics. 47: 1781-1786. DOI: 10.1016/S0038-1101(03)00138-2 |
0.52 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Influence of gate oxide thickness on Sc2O3/GaN MOSFETs Solid-State Electronics. 47: 1757-1761. DOI: 10.1016/S0038-1101(03)00128-X |
0.523 |
|
| 2003 |
Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM. Ferromagnetism in Mn- and Cr-implanted AlGaP Solid-State Electronics. 47: 1549-1552. DOI: 10.1016/S0038-1101(03)00098-4 |
0.824 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Gate breakdown characteristics of MgO/GaN MOSFETs Solid-State Electronics. 47: 1597-1600. DOI: 10.1016/S0038-1101(03)00090-X |
0.53 |
|
| 2003 |
Cho H, Lee K, Gila B, Abernathy C, Pearton S, Ren F. Temperature dependence of MgO/GaN MOSFET performance Solid-State Electronics. 47: 1601-1604. DOI: 10.1016/S0038-1101(03)00089-3 |
0.536 |
|
| 2003 |
Polyakov A, Govorkov A, Smirnov N, Pashkova N, Pearton S, Overberg M, Abernathy C, Norton D, Zavada J, Wilson R. Properties of Mn and Co implanted ZnO crystals Solid-State Electronics. 47: 1523-1531. DOI: 10.1016/S0038-1101(03)00083-2 |
0.654 |
|
| 2003 |
Kim J, Gila B, Abernathy C, Chung G, Ren F, Pearton S. Comparison of Pt/GaN and Pt/4H-SiC gas sensors Solid-State Electronics. 47: 1487-1490. DOI: 10.1016/S0038-1101(02)00495-1 |
0.514 |
|
| 2003 |
Kim J, Gila B, Chung G, Abernathy C, Pearton S, Ren F. Hydrogen-sensitive GaN Schottky diodes Solid-State Electronics. 47: 1069-1073. DOI: 10.1016/S0038-1101(02)00485-9 |
0.522 |
|
| 2003 |
Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Thaler G, Overberg M, Frazier R, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Solid-State Electronics. 47: 981-987. DOI: 10.1016/S0038-1101(02)00472-0 |
0.793 |
|
| 2003 |
Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, et al. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors Solid-State Electronics. 47: 1015-1020. DOI: 10.1016/S0038-1101(02)00468-9 |
0.536 |
|
| 2003 |
Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Overberg M, Thaler G, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Solid-State Electronics. 47: 963-968. DOI: 10.1016/S0038-1101(02)00463-X |
0.781 |
|
| 2003 |
Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/J.Physb.2003.09.003 |
0.803 |
|
| 2003 |
Overberg ME, Thaler GT, Abernathy CR, Theodoropoulou NA, McCarthy KT, Arnason SB, Lee JS, Lim JD, Shim SB, Suh KS, Khim ZG, Park YD, Pearton SJ, Hebard AF. Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy Journal of Electronic Materials. 32: 298-306. DOI: 10.1007/s11664-003-0148-5 |
0.622 |
|
| 2003 |
Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim J, Ren F. GaN and other materials for semiconductor spintronics Journal of Electronic Materials. 32: 288-297. DOI: 10.1007/S11664-003-0147-6 |
0.781 |
|
| 2003 |
Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim J, Ren F, Theodoropoulou N, Hebard AF, Park YD. Room temperature ferromagnetism in GaMnN and GaMnP Physica Status Solidi (a) Applied Research. 195: 222-227. DOI: 10.1002/Pssa.200306283 |
0.787 |
|
| 2002 |
Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SN, Wilson RG. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Physical Review Letters. 89: 107203. PMID 12225220 DOI: 10.1103/Physrevlett.89.107203 |
0.66 |
|
| 2002 |
Onstine AH, Gila BP, Kim J, Stodilka D, Allums K, Abernathy CR, Ren F, Pearton SJ. Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.60 |
0.544 |
|
| 2002 |
Gila BP, Lambers E, Luo B, Onstine AH, Allums KK, Abernathy CR, Ren F, Pearton SJ. Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L11.40 |
0.536 |
|
| 2002 |
Kim J, Gila B, Mehandru R, Johnson JW, Shin JH, Lee KP, Luo B, Onstine A, Abernathy CR, Pearton SJ, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Journal of the Electrochemical Society. 149: G482. DOI: 10.1557/Proc-693-I11.30.1 |
0.488 |
|
| 2002 |
Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14. DOI: 10.1557/Proc-690-F1.5 |
0.827 |
|
| 2002 |
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch R, Gillespie J, Jenkins T, Sewell J, Via D, Crespo A, Irokawa Y. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of the Electrochemical Society. 149: G613. DOI: 10.1149/1.1512675 |
0.542 |
|
| 2002 |
Kim J, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Pashova NY, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Optical Absorption and Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy Electrochemical and Solid-State Letters. 5: G103. DOI: 10.1149/1.1511343 |
0.785 |
|
| 2002 |
Kim J, Gila BP, Mehandru R, Luo B, Onstine AH, Abernathy CR, Ren F, Allums KK, Dwivedi R, Forgarty TN, Wilkins R, Irokawa Y, Pearton SJ. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes Electrochemical and Solid-State Letters. 5: G57. DOI: 10.1149/1.1481796 |
0.535 |
|
| 2002 |
Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide Electrochemical and Solid-State Letters. 5: G51. DOI: 10.1149/1.1479298 |
0.565 |
|
| 2002 |
Harris KK, Gila BP, Deroaches J, Lee KN, MacKenzie JD, Abernathy CR, Ren F, Pearton SJ. Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon Journal of the Electrochemical Society. 149: G128. DOI: 10.1149/1.1431966 |
0.581 |
|
| 2002 |
Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 969-973. DOI: 10.1116/1.1477424 |
0.817 |
|
| 2002 |
Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, et al. Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 721-724. DOI: 10.1116/1.1465449 |
0.78 |
|
| 2002 |
Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM, Park YD. Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 579-582. DOI: 10.1116/1.1465447 |
0.646 |
|
| 2002 |
Zhang A, Ren F, Anderson T, Abernathy C, Singh R, Holloway P, Pearton S, Palmer D, McGuire G. High-Power GaN Electronic Devices Critical Reviews in Solid State and Materials Sciences. 27: 1-71. DOI: 10.1080/20014091104206 |
0.304 |
|
| 2002 |
Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NY, Thaler GT, Overberg ME, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy Journal of Applied Physics. 92: 4989-4993. DOI: 10.1063/1.1510597 |
0.805 |
|
| 2002 |
Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NY, Kim J, Ren F, Overberg ME, Thaler GT, Abernathy CR, Pearton SJ, Wilson RG. Electrical and optical properties of GaN films implanted with Mn and Co Journal of Applied Physics. 92: 3130-3136. DOI: 10.1063/1.1499977 |
0.786 |
|
| 2002 |
Kim J, Ren F, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG. Pt Schottky contacts to n-(Ga,Mn)N Applied Physics Letters. 81: 658-660. DOI: 10.1063/1.1496130 |
0.772 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Irokawa Y. Inversion behavior in Sc2O3/GaN gated diodes Applied Physics Letters. 81: 373-375. DOI: 10.1063/1.1492852 |
0.553 |
|
| 2002 |
Pearton SJ, Overberg ME, Abernathy CR, Theodoropoulou NA, Hebard AF, Chu SNG, Osinsky A, Fuflyigin V, Zhu LD, Polyakov AY, Wilson RG. Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN 2 Journal of Applied Physics. 92: 2047-2051. DOI: 10.1063/1.1490621 |
0.679 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Irokawa Y. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes Applied Physics Letters. 80: 4555-4557. DOI: 10.1063/1.1487903 |
0.564 |
|
| 2002 |
Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533 |
0.822 |
|
| 2002 |
Luo B, Johnson JW, Kim J, Mehandru RM, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Baca AG, Briggs RD, Shul RJ, Monier C, Han J. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 80: 1661-1663. DOI: 10.1063/1.1455692 |
0.554 |
|
| 2002 |
Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors Journal of Applied Physics. 91: 7499-7501. DOI: 10.1063/1.1452750 |
0.689 |
|
| 2002 |
Kim J, Mehandru R, Luo B, Ren F, Gila B, Onstine A, Abernathy C, Pearton S, Irokawa Y. Charge pumping in Sc2O3∕GaN gated mos diodes Electronics Letters. 38: 920. DOI: 10.1049/El:20020639 |
0.465 |
|
| 2002 |
Pearton S, Abernathy C, Overberg M, Thaler G, Onstine A, Gila B, Ren F, Lou B, Kim J. New applications advisable for gallium nitride Materials Today. 5: 24-31. DOI: 10.1016/S1369-7021(02)00636-3 |
0.777 |
|
| 2002 |
Pearton SJ, Theodoropoulou N, Overberg ME, Abernathy CR, Hebard AF, Chu SNG, Wilson RG, Zavada JM. Characterization of Ni-implanted GaN and SiC Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 94: 159-163. DOI: 10.1016/S0921-5107(02)00056-9 |
0.66 |
|
| 2002 |
Overberg ME, Theodoropoulou N, Chu SNG, Pearton SJ, Abernathy CR, Hebard AF, Wilson RG, Zavada JM. Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 94: 14-19. DOI: 10.1016/S0921-5107(02)00055-7 |
0.673 |
|
| 2002 |
Luo B, Mehandru RM, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch RC, Gillespie J, Dellmer R, Jenkins T, Sewell J, Via D, Crespo A. The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Solid-State Electronics. 46: 2185-2190. DOI: 10.1016/S0038-1101(02)00229-0 |
0.537 |
|
| 2002 |
Luo B, Johnson J, Gila B, Onstine A, Abernathy C, Ren F, Pearton S, Baca A, Dabiran A, Wowchack A, Chow P. Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 Solid-State Electronics. 46: 467-476. DOI: 10.1016/S0038-1101(01)00314-8 |
0.54 |
|
| 2002 |
Lee KP, Pearton SJ, Overberg ME, Abernathy CR, Wilson RG, Chu SNG, Theodoropolou N, Hebard AF, Zavada JM. Magnetic effects of direct ion implantation of Mn and Fe into p-GaN Journal of Electronic Materials. 31: 411-415. DOI: 10.1007/S11664-002-0093-8 |
0.7 |
|
| 2002 |
Pearton SJ, Lee KP, Overberg ME, Abernathy CR, Theodoropoulou N, Hebard AF, Wilson RG, Chu SNG, Zavada J. Magnetism in SiC implanted with high doses of Fe and Mn Journal of Electronic Materials. 31: 336-339. DOI: 10.1007/S11664-002-0078-7 |
0.659 |
|
| 2001 |
Theodoropoulou N, Lee KP, Overberg ME, Chu SN, Hebard AF, Abernathy CR, Pearton SJ, Wilson RG. Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6. PMID 12914038 DOI: 10.1166/Jnn.2001.004 |
0.696 |
|
| 2001 |
Allums K, Luo B, Mehandru R, Gila BP, Dwivedi R, Fogarty T, Wilkins R, Abernathy CR, Ren F, Pearton SJ. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.31.1 |
0.552 |
|
| 2001 |
Kim J, Gila BP, Mehandru R, Johnson J, Shin JH, Lee K, Luo B, Onstine A, Abernathy CR, Pearton S, Ren F. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Mrs Proceedings. 693. DOI: 10.1557/PROC-693-I11.30.1 |
0.58 |
|
| 2001 |
Gila B, Johnson J, Lee KN, Krishnamoorthy V, Bates S, Abernathy CR, Ren F, Pearton SJ. Gadolinium Oxide Gate Dielectrics for GaN MOSFETs Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E7.4 |
0.588 |
|
| 2001 |
Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SNG, Wilson RG. Ferromagnetic and structural properties of Mn-implanted p-GaN Materials Research Society Symposium - Proceedings. 674. DOI: 10.1557/Proc-674-T6.8 |
0.649 |
|
| 2001 |
Overberg ME, Abernathy CR, Pearton SJ, Sharifi F, Hebard AF, Theodoropoulou N, Von Molnar S, Anane M, Xiong P. Epitaxial growth of dilute magnetic semiconductors: GaMnN and GaMnP Materials Research Society Symposium - Proceedings. 674. DOI: 10.1557/Proc-674-T6.5 |
0.694 |
|
| 2001 |
Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Magnetic properties of Fe- and Mn-implanted SiC Electrochemical and Solid-State Letters. 4. DOI: 10.1149/1.1414945 |
0.66 |
|
| 2001 |
Johnson JW, Gila BP, Luo B, Lee KP, Abernathy CR, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC, Ren F. SiO[sub 2]/Gd[sub 2]O[sub 3]/GaN Metal Oxide Semiconductor Field Effect Transistors Journal of the Electrochemical Society. 148: G303. DOI: 10.1149/1.1368110 |
0.475 |
|
| 2001 |
Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Characterization of high dose Fe implantation into p-GaN Applied Physics Letters. 79: 3452-3454. DOI: 10.1063/1.1420406 |
0.656 |
|
| 2001 |
Overberg ME, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF. Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy Applied Physics Letters. 79: 3128-3130. DOI: 10.1063/1.1416472 |
0.734 |
|
| 2001 |
Overberg ME, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Hebard AF. Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN Applied Physics Letters. 79: 1312-1314. DOI: 10.1063/1.1397763 |
0.661 |
|
| 2001 |
Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SNG, Wilson RG. Magnetic and structural properties of Mn-implanted GaN Applied Physics Letters. 78: 3475-3477. DOI: 10.1063/1.1376659 |
0.65 |
|
| 2001 |
Overberg M, Lee K, Abernathy CR, Pearton SJ, Hobson W, Wilson RG, Zavada JM. Characterization and annealing of Eu-doped GaN Materials Science and Engineering: B. 81: 150-152. DOI: 10.1016/S0921-5107(00)00705-4 |
0.66 |
|
| 2001 |
Overberg M, Abernathy CR, MacKenzie J, Pearton SJ, Wilson RG, Zavada JM. Effect of carbon doping on GaN:Er Materials Science and Engineering: B. 81: 121-126. DOI: 10.1016/S0921-5107(00)00686-3 |
0.636 |
|
| 2001 |
Park P, Norasetthekul S, Lee K, Baik K, Gila B, Shin J, Abernathy C, Ren F, Lambers E, Pearton S. Wet and dry etching of Sc2O3 Applied Surface Science. 185: 52-59. DOI: 10.1016/S0169-4332(01)00593-1 |
0.508 |
|
| 2001 |
Baik K, Park P, Gila B, Shin J, Abernathy C, Norasetthekul S, Luo B, Ren F, Lambers E, Pearton S. Comparison of plasma etch chemistries for MgO Applied Surface Science. 183: 26-32. DOI: 10.1016/S0169-4332(01)00542-6 |
0.503 |
|
| 2001 |
Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Solid-State Electronics. 45: 1837-1842. DOI: 10.1016/S0038-1101(01)00248-9 |
0.646 |
|
| 2001 |
Johnson J, LaRoch J, Ren F, Gila B, Overberg M, Abernathy C, Chyi J, Chuo C, Nee T, Lee C, Lee K, Park S, Park Y, Pearton S. Schottky rectifiers fabricated on free-standing GaN substrates Solid-State Electronics. 45: 405-410. DOI: 10.1016/S0038-1101(01)00059-4 |
0.715 |
|
| 2001 |
Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN Solid-State Electronics. 45: 467-470. DOI: 10.1016/S0038-1101(01)00016-8 |
0.64 |
|
| 2001 |
Gila B, Johnson J, Mehandru R, Luo B, Onstine A, Krishnamoorthy V, Bates S, Abernathy C, Ren F, Pearton S. Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs Physica Status Solidi (a). 188: 239-242. DOI: 10.1002/1521-396X(200111)188:1<239::Aid-Pssa239>3.0.Co;2-D |
0.566 |
|
| 2001 |
Theodoropoulou N, Overberg ME, Chu SNG, Hebard AF, Abernathy CR, Wilson RG, Zavada JM, Lee KP, Pearton SJ. Magnetic properties of Mn and Fe-implanted p-GaN Physica Status Solidi (B) Basic Research. 228: 337-340. DOI: 10.1002/1521-3951(200111)228:1<337::Aid-Pssb337>3.0.Co;2-J |
0.7 |
|
| 2000 |
Overberg M, Abernathy C, Pearton SJ, Wilson RG, Zavada JM. Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er Mrs Internet Journal of Nitride Semiconductor Research. 5: 810-816. DOI: 10.1557/s1092578300005111 |
0.642 |
|
| 2000 |
Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.16 |
0.601 |
|
| 2000 |
Pearton S, Cao X, Cho H, Lee K, Monier C, Ren F, Dang G, Zhang A, Johnson W, LaRoche J, Gila B, Abernathy C, Shul R, Baca A, Han J, et al. Device Processing for GaN High Power Electronics Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T7.1.1 |
0.529 |
|
| 2000 |
Overberg ME, Brand J, MacKenzie JD, Abernathy CR, Pearton SJ, Zavada JM. The Effect of Er Concentration on the Morphology and Photoluminescence of GaN:Er Journal of the Electrochemical Society. 147: 3117. DOI: 10.1149/1.1393867 |
0.628 |
|
| 2000 |
Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG. Surface chemical treatment for the cleaning of AlN and GaN surfaces Journal of the Electrochemical Society. 147: 3087-3090. DOI: 10.1149/1.1393860 |
0.697 |
|
| 2000 |
Johnson JW, Luo B, Ren F, Gila BP, Krishnamoorthy W, Abernathy CR, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC. Gd2O3/GaN metal-oxide-semiconductor field-effect transistor Applied Physics Letters. 77: 3230-3232. DOI: 10.1063/1.1326041 |
0.563 |
|
| 2000 |
Hays DC, Lee KP, Gila BP, Ren F, Abernathy CR, Pearton SJ. Dry etch selectivity of Gd2O3 to GaN and AlN Journal of Electronic Materials. 29: 285-290. DOI: 10.1007/S11664-000-0064-X |
0.513 |
|
| 1999 |
Overberg M, Abernathy C, Pearton SJ, Wilson RG, Zavada JM. Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er Mrs Proceedings. 595. DOI: 10.1557/S1092578300005111 |
0.642 |
|
| 1999 |
Gila B, Lee KN, Laroche J, Ren F, Donovan SM, Abernathy CR, Han J. MBE Growth of Oxides for III–N MOSFETs Mrs Proceedings. 573. DOI: 10.1557/Proc-573-247 |
0.584 |
|
| 1999 |
Han J, Baca AG, Shul RJ, Willison CG, Zhang L, Ren F, Zhang AP, Dang GT, Donovan SM, Cao XA, Cho H, Jung KB, Abernathy CR, Pearton SJ, Wilson RG. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor Applied Physics Letters. 74: 2702-2704. DOI: 10.1063/1.123942 |
0.31 |
|
| 1998 |
Donovan SM, Gila B, MacKenzie JD, Lee KN, Abernathy CR, Wilson RG, Muhr GT. The Role of the In Source IN InN Growth from Molecular Beams Mrs Proceedings. 512. DOI: 10.1557/Proc-512-525 |
0.501 |
|
| 1998 |
Cao XA, Abernathy CR, Singh RK, Pearton SJ, Fu M, Sarvepalli V, Sekhar JA, Zolper JC, Rieger DJ, Han J, Drummond TJ, Shul RJ, Wilson RG. Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system Applied Physics Letters. 73: 229-231. DOI: 10.1063/1.121764 |
0.313 |
|
| 1998 |
Ren F, Abernathy C, MacKenzie J, Gila B, Pearton S, Hong M, Marcus M, Schurman M, Baca A, Shul R. Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics Solid-State Electronics. 42: 2177-2181. DOI: 10.1016/S0038-1101(98)00213-5 |
0.569 |
|
| 1997 |
Fu M, Sarvepalli V, Singh RK, Abernathy CR, Cao X, Pearton SJ, Sekhar JA. A Novel Technique For Rtp Annealing Of Compound Semiconductors Mrs Proceedings. 483. DOI: 10.1557/PROC-483-345 |
0.304 |
|
| 1995 |
Mackenzie JD, Abernathy CR, Pearton SJ, Wilson RG. AlN grown by metalorganic molecular beam epitaxy Materials Research Society Symposium - Proceedings. 363: 213-218. DOI: 10.1557/Proc-363-213 |
0.306 |
|
| 1995 |
MacKenzie JD, Abernathy CR, Pearton SJ, Chu SNG. Annealing behavior of AlxGa1-xAs:C grown by metalorganic molecular beam epitaxy Applied Physics Letters. 1397. |
0.309 |
|
| 1994 |
Bharatan S, Ren F, Jones KS, Wisk FW, Abernathy CR, Lothian JR, Pearton SJ. Structural characterization of GaN and GaAsxN1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy N1-x grown by electron cyclotron resonance-metaiorganic molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1094-1098. DOI: 10.1116/1.579170 |
0.313 |
|
| 1994 |
Pearton SJ, Abernathy CR, Ren F. Selective area processing of InGaAsP Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 194-197. |
0.302 |
|
| 1994 |
Pearton SJ, Abernathy CR, Hobson WS, Ren F. Effects of ion-irradiation and hydrogenation on the doping of InGaAlN alloys Materials Research Society Symposium Proceedings. 325: 261-266. |
0.308 |
|
| 1994 |
Zavada JM, Wilson RG, Pearton SJ, Abernathy CR. Redistribution of hydrogen in GaN, AlN, and InN Materials Research Society Symposium - Proceedings. 339: 553-558. |
0.301 |
|
| 1993 |
Pearton SJ, Abernathy CR, Wisk PW, Hobson WS, Ren F. Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation Applied Physics Letters. 63: 1143-1145. DOI: 10.1063/1.109806 |
0.307 |
|
| 1991 |
Abernathy CR, Pearton SJ, Ha NT. Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 108: 827-830. DOI: 10.1016/0022-0248(91)90264-6 |
0.331 |
|
| 1990 |
Pearton SJ, Ren F, Abernathy CR, Katz A, Hobson WS, Chu SNG, Kovalchick J. Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs Mrs Proceedings. 181. DOI: 10.1557/Proc-181-491 |
0.306 |
|
| 1988 |
Pearton SJ, Abernathy CR, Caruso R, Vernon SM, Short KT, Brown JM, Chu SNG, Stavola M, Haven VE. Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition Journal of Applied Physics. 63: 775-783. DOI: 10.1063/1.341141 |
0.309 |
|
| 1987 |
Pearton SJ, Vernon SM, Short KT, Brown JM, Abernathy CR, Caruso R, Chu SNG, Haven VE, Bunker SN. Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator Applied Physics Letters. 51: 1188-1190. DOI: 10.1063/1.98728 |
0.315 |
|
| 1987 |
Pearton SJ, Vernon SM, Abernathy CR, Short KT, Caruso R, Stavola M, Gibson JM, Haven VE, White AE, Jacobson DC. Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 62: 862-867. DOI: 10.1063/1.339690 |
0.301 |
|
| 1984 |
Abernathy CR, Bates CW, Anani AA, Haba B, Smestad G. Production of single phase chalcopyrite CuInSe2by spray pyrolysis Applied Physics Letters. 45: 890-892. DOI: 10.1063/1.95403 |
0.684 |
|
| 1984 |
Abernathy CR, Bates CW, Anani AA, Haba B. Kinetic effects in film formation of CuInSe2 prepared by chemical spray pyrolysis Thin Solid Films. 115. DOI: 10.1016/0040-6090(84)90319-5 |
0.66 |
|
| 1983 |
Bates CW, Uekita M, Nelson KF, Abernathy CR, Mooney JB. Effect ofpH on the production of chalcopyrite CuInSe2prepared by spray pyrolysis Applied Physics Letters. 43: 851-852. DOI: 10.1063/1.94525 |
0.683 |
|
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