| Year |
Citation |
Score |
| 2011 |
Todi VO, Shantheyanda BP, Todi RM, Sundaram KB, Coffey K. Optical characterization of BCN films deposited at various N2/Ar gas flow ratios by RF magnetron sputtering Materials Science and Engineering B-Advanced Functional Solid-State Materials. 176: 878-882. DOI: 10.1016/J.Mseb.2011.05.010 |
0.805 |
|
| 2010 |
Savchyn O, Todi RM, Coffey KR, Kik PG. High-temperature optical properties of sensitized Er3+ in Si-rich SiO2 – implications for gain performance Optical Materials. 32: 1274-1278. DOI: 10.1016/J.Optmat.2010.04.037 |
0.409 |
|
| 2009 |
Savchyn O, Todi RM, Coffey KR, Ono LK, Cuenya BR, Kik PG. Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films Applied Physics Letters. 95: 231109. DOI: 10.1063/1.3272271 |
0.39 |
|
| 2009 |
Savchyn O, Todi RM, Coffey KR, Kik PG. Observation of temperature-independent internal Er3+ relaxation efficiency in Si-rich SiO2 films Applied Physics Letters. 94: 241115. DOI: 10.1063/1.3157135 |
0.437 |
|
| 2009 |
Vijayakumar A, Warren AP, Todi RM, Sundaram KB. Photoluminescence from RF sputtered SiCBN thin films Journal of Materials Science: Materials in Electronics. 20: 144-148. DOI: 10.1007/S10854-008-9667-4 |
0.833 |
|
| 2008 |
Simoen E, Sonde S, Claeys C, Satta A, Jaeger BD, Todi R, Meuris M. Processing Factors Impacting the Leakage Current and Flicker Noise of Germanium p + -n Junctions on Silicon Substrates Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2823492 |
0.365 |
|
| 2008 |
Warren AP, Todi RM, Yao B, Barmak K, Sundaram KB, Coffey KR. On the phase identification of dc magnetron sputtered Pt–Ru alloy thin films Journal of Vacuum Science and Technology. 26: 1208-1212. DOI: 10.1116/1.2966422 |
0.789 |
|
| 2008 |
Savchyn O, Kik PG, Todi RM, Coffey KR. Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals Physical Review B. 77. DOI: 10.1103/Physrevb.77.205438 |
0.356 |
|
| 2008 |
Savchyn O, Todi RM, Coffey KR, Kik PG. Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO2 Applied Physics Letters. 93: 233120. DOI: 10.1063/1.3044480 |
0.343 |
|
| 2008 |
Vijayakumar A, Todi RM, Warren AP, Sundaram KB. Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering Diamond and Related Materials. 17: 944-948. DOI: 10.1016/J.Diamond.2008.01.097 |
0.817 |
|
| 2007 |
Vijayakumar A, Todi RM, Todi VO, Sundaram KB. In Situ High Temperature Electrical Characterization of RF Sputtered SiCBN Thin Films Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2768193 |
0.814 |
|
| 2007 |
Vijayakumar A, Todi RM, Sundaram KB. Oxygen Annealing Characterization of Reactively Sputtered SiCBN Thin Films by X-Ray Photoelectron Spectroscopy Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2732166 |
0.832 |
|
| 2007 |
Vijayakumar A, Todi RM, Sundaram KB. Effect of N2 ∕ Ar Gas Mixture Composition on the Chemistry of SiCBN Thin Films Prepared by RF Reactive Sputtering Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2433708 |
0.828 |
|
| 2007 |
Todi RM, Erickson MS, Sundaram KB, Barmak K, Coffey KR. Comparison of the Work Function of Pt–Ru Binary Metal Alloys Extracted From MOS Capacitor and Schottky-Barrier-Diode Measurements Ieee Transactions On Electron Devices. 54: 807-813. DOI: 10.1109/Ted.2007.892352 |
0.633 |
|
| 2007 |
Vijayakumar A, Sundaram KB, Todi RM. Amorphous-SiCBN-Based Metal–Semiconductor–Metal Photodetector for High-Temperature Applications Ieee Electron Device Letters. 28: 713-715. DOI: 10.1109/Led.2007.902083 |
0.769 |
|
| 2007 |
Guo W, Nicholas G, Kaczer B, Todi RM, Jaeger BD, Claeys C, Mercha A, Simoen E, Cretu B, Routoure J-, Carin R. Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack Ieee Electron Device Letters. 28: 288-291. DOI: 10.1109/Led.2007.891797 |
0.42 |
|
| 2007 |
Savchyn O, Ruhge FR, Kik PG, Todi RM, Coffey KR, Nukala H, Heinrich H. Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-richSiO2films Physical Review B. 76. DOI: 10.1103/Physrevb.76.195419 |
0.352 |
|
| 2007 |
Sood S, Peelamedu R, Sundaram KB, Dein E, Todi RM. Wet etching of sputtered tantalum thin films in NaOH and KOH based solutions Journal of Materials Science: Materials in Electronics. 18: 535-539. DOI: 10.1007/S10854-006-9053-Z |
0.793 |
|
| 2006 |
Todi RM, Warren AP, Sundaram KB, Coffey KR. X-Ray Photoelectron Spectroscopy Analysis of Oxygen Annealed Radio Frequency Sputter Deposited SiCN Thin Films Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2198127 |
0.831 |
|
| 2006 |
Todi RM, Warren AP, Sundaram KB, Barmak K, Coffey KR. Characterization of Pt-Ru binary alloy thin films for work function tuning Ieee Electron Device Letters. 27: 542-545. DOI: 10.1109/Led.2006.876326 |
0.677 |
|
| 2006 |
Todi RM, Sundaram KB, Warren AP, Scammon K. Investigation of oxygen annealing effects on RF sputter deposited SiC thin films Solid-State Electronics. 50: 1189-1193. DOI: 10.1016/J.Sse.2006.06.021 |
0.831 |
|
| 2005 |
Gadkari PR, Warren AP, Todi RM, Petrova RV, Coffey KR. Comparison of the agglomeration behavior of thin metallic films on SiO2 Journal of Vacuum Science and Technology. 23: 1152-1161. DOI: 10.1116/1.1861943 |
0.699 |
|
| 2004 |
Sundaram KB, Alizadeh Z, Todi RM, Desai VH. Investigations on hardness of rf sputter deposited SiCN thin films Materials Science and Engineering A. 368: 103-108. DOI: 10.1016/J.Msea.2003.09.103 |
0.817 |
|
| 2003 |
Sundaram KB, Sah RE, Baumann H, Balachandran K, Todi RM. Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition Microelectronic Engineering. 70: 109-114. DOI: 10.1016/S0167-9317(03)00412-X |
0.762 |
|
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