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Forest P. Dixon, Ph.D. - Publications

Affiliations: 
2010 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N, Kuciauskas D. Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Applied Physics Letters. 99. DOI: 10.1063/1.3633345  0.647
2011 Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer Journal of Applied Physics. 109. DOI: 10.1063/1.3561368  0.683
2010 Dixon F, Feng M, Holonyak N. Design and operation of distributed feedback transistor lasers Journal of Applied Physics. 108: 93109. DOI: 10.1063/1.3504608  0.599
2010 Dixon F, Feng M, Holonyak N. Distributed feedback transistor laser Applied Physics Letters. 96: 241103. DOI: 10.1063/1.3453656  0.638
2008 Dixon F, Feng M, Holonyak N, Huang Y, Zhang XB, Ryou JH, Dupuis RD. Transistor laser with emission wavelength at 1544 nm Applied Physics Letters. 93. DOI: 10.1063/1.2958228  0.637
2008 Huang Y, Zhang XB, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. InAlGaAsInP light-emitting transistors operating near 1.55 μm Journal of Applied Physics. 103. DOI: 10.1063/1.2939243  0.656
2006 Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704  0.573
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