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Vishal P. Trivedi, Ph.D. - Publications

Affiliations: 
2005 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Trivedi VP, John JP, To K, Huang WM. A Novel Integration of Si Schottky Diode for mmWave CMOS, Low-Power SoCs, and More Ieee Electron Device Letters. 32: 258-260. DOI: 10.1109/Led.2010.2099202  0.42
2009 Lu Z, Fossum JG, Yang J, Harris HR, Trivedi VP, Chu M, Thompson SE. A Simplified Superior Floating-Body/Gate DRAM Cell Ieee Electron Device Letters. 30: 282-284. DOI: 10.1109/Led.2008.2012006  0.627
2008 Lu Z, Fossum JG, Zhang W, Trivedi VP, Mathew L, Sadd M. A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM Ieee Transactions On Electron Devices. 55: 1511-1518. DOI: 10.1109/Ted.2008.922796  0.713
2007 Chowdhury MM, Trivedi VP, Fossum JG, Mathew L. Carrier Mobility/Transport in Undoped-UTB DG FinFETs Ieee Transactions On Electron Devices. 54: 1125-1131. DOI: 10.1109/Ted.2007.893669  0.638
2007 Fossum JG, Lu Z, Trivedi VP. New Insights on “Capacitorless” Floating-Body DRAM Cells Ieee Electron Device Letters. 28: 513-516. DOI: 10.1109/Led.2007.896883  0.705
2007 Trivedi VP, Fossum JG, Zhang W. Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies Solid-State Electronics. 51: 170-178. DOI: 10.1016/J.Sse.2006.10.014  0.673
2005 Kim S, Fossum JG, Trivedi VP. Bulk inversion in FinFETs and implied insights on effective gate width Ieee Transactions On Electron Devices. 52: 1993-1997. DOI: 10.1109/Ted.2005.854286  0.686
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