| Year |
Citation |
Score |
| 2012 |
Wu Q, Chen J, Lu Z, Zhou Z, Luo J, Chai Z, Yu T, Qiu C, Li L, Pang A, Wang X, Fossum JG. Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories Ieee Electron Device Letters. 33: 743-745. DOI: 10.1109/Led.2012.2190031 |
0.753 |
|
| 2011 |
Lu Z, Fossum JG, Zhou Z. A Floating-Body/Gate DRAM Cell Upgraded for Long Retention Time Ieee Electron Device Letters. 32: 731-733. DOI: 10.1109/Led.2011.2134065 |
0.755 |
|
| 2010 |
Aoulaiche M, Collaert N, Degraeve R, Lu Z, Wachter BD, Groeseneken G, Jurczak M, Altimime L. BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device Ieee Electron Device Letters. 31: 1380-1382. DOI: 10.1109/Led.2010.2079313 |
0.371 |
|
| 2009 |
Zhou Z, Fossum JG, Lu Z. Physical Insights on BJT-Based 1T DRAM Cells Ieee Electron Device Letters. 30: 565-567. DOI: 10.1109/Led.2009.2017285 |
0.744 |
|
| 2009 |
Lu Z, Fossum JG, Yang J, Harris HR, Trivedi VP, Chu M, Thompson SE. A Simplified Superior Floating-Body/Gate DRAM Cell Ieee Electron Device Letters. 30: 282-284. DOI: 10.1109/Led.2008.2012006 |
0.691 |
|
| 2008 |
Lu Z, Fossum JG, Zhang W, Trivedi VP, Mathew L, Sadd M. A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM Ieee Transactions On Electron Devices. 55: 1511-1518. DOI: 10.1109/Ted.2008.922796 |
0.752 |
|
| 2007 |
Fossum JG, Lu Z, Trivedi VP. New Insights on “Capacitorless” Floating-Body DRAM Cells Ieee Electron Device Letters. 28: 513-516. DOI: 10.1109/Led.2007.896883 |
0.746 |
|
| 2007 |
Lu Z, Fossum JG. Short-Channel Effects in Independent-Gate FinFETs Ieee Electron Device Letters. 28: 145-147. DOI: 10.1109/Led.2006.889236 |
0.619 |
|
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