Paul R Berger, Ph.D.
Area:
semiconductor, electrical engineering, quantum tunneling
Website:
http://www2.ece.ohio-state.edu/~berger/Google:
"https://scholar.google.com/citations?hl=en&user=bkj7wpIAAAAJ"Bio:
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continued as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with a Google Scholar H-index of 37. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee. He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of the Optical Society of America.
He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
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| Storm DF, Growden TA, Cornuelle EM, et al. (2020) Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214 |
| Zhang W, Growden TA, Storm DF, et al. (2020) Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models Ieee Transactions On Electron Devices. 67: 75-79 |
| Li M, Honkanen M, Liu X, et al. (2020) 0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes Ieee Transactions On Electron Devices. 67: 360-364 |
| Cornuelle EM, Growden TA, Storm DF, et al. (2020) Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 Aip Advances. 10: 055307 |
| Growden TA, Storm DF, Cornuelle EM, et al. (2020) Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters. 116: 113501 |
| Bhalerao SR, Lupo D, Zangiabadi A, et al. (2019) 0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High-$\kappa$ Al2O3 Dielectric Ieee Electron Device Letters. 40: 1112-1115 |
| Growden TA, Cornuelle EM, Storm DF, et al. (2019) 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template Applied Physics Letters. 114: 203503 |
| Growden TA, Zhang W, Brown ER, et al. (2018) Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures. Light, Science & Applications. 7: 17150 |
| Rinne J, Keskinen J, Berger PR, et al. (2018) M2M Communication Assessment in Energy-Harvesting and Wake-Up Radio Assisted Scenarios Using Practical Components. Sensors (Basel, Switzerland). 18 |
| Growden TA, Zhang W, Brown ER, et al. (2018) 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes Applied Physics Letters. 112: 033508 |
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